0.55-ohm pdf Datasheet P11 Full Text Search --- IC-ON-LINE


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0.55-ohm Datasheet PDF File

For 0.55-ohm Found Datasheets File :: 20393 Search Time::1.328ms
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				IRF[International Rectifier]
Part No.	IR3080 IR3080M IR3080MTR
OCR Text	... 6 bit VR10 compatible VID with 0.5% overall system accuracy 1 to X phases operation with matching phase ICs On-chip 700 VID Pull-up resisto...55 600 700 0 130 92 63 700 1000 5 200 1.05 A A mV mV ns A/A ns s 0.95 Measure time until P...
Description	XPHASETM VRD10 CONTROL IC WITH VCCVID & OVERTEMP DETECT XPHASE VRD10 CONTROL IC WITH VCCVID & OVERTEMP DETECT
File Size	1,031.81K / 41 Page	View it Online	Download Datasheet

				ETC
Part No.	KP4010
OCR Text	...tter 4. Collector TOLERANCE :+ 0.2mm Schematic : Top View Absolute Maximum Ratings Parameter Input Forward current Peak forward curr...55 to +125 260 Unit mA A V (Ta=25C) mW V V mA mW mW Vrms C C C Electro-optical Characteris...
Description	High Reliability Photo Coupler
File Size	248.13K / 2 Page	View it Online	Download Datasheet

				MACOM[Tyco Electronics]
Part No.	MRF175GU1111 MRF175GV
OCR Text	...rmal Resistance * Low Crss -- 7.0 pF Typ @ VDS = 50 V MRF176GU MRF176GV 200/150 W, 50 V, 500 MHz N-CHANNEL MOS BROADBAND RF POWER FETs...55 -- -- dB % R2 T1 D.U.T. T2 C5 C1 C2 C6 C7 C1 -- Arco 404, 8.0-60 pF C2, C3, C6, C8...
Description	N-CHANNEL MOS BROADBAND RF POWER FETs
File Size	205.41K / 10 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF175GU MRF175GV
OCR Text	...age Drain-Gate Voltage (RGS = 1.0 M) Gate-Source Voltage Drain Current -- Continuous Total Device Dissipation @ TC = 25C Derate above 25C St...55 14 65 -- -- dB % R1 BIAS 0 - 6 V C3 C4 C8 C9 L2 C10 + 28 V - R2 D.U.T. T1 T2 L1 ...
Description	N-CHANNEL MOS BROADBAND RF POWER FETs
File Size	183.29K / 8 Page	View it Online	Download Datasheet

				MACOM[Tyco Electronics]
Part No.	MRF175GV MRF175GU
OCR Text	...age Drain-Gate Voltage (RGS = 1.0 M) Gate-Source Voltage Drain Current -- Continuous Total Device Dissipation @ TC = 25C Derate above 25C St...55 14 65 -- -- dB % R1 BIAS 0-6 V C3 C4 C8 C9 L2 C10 + 28 V - R2 D.U.T. T1 T2 L1 C...
Description	From old datasheet system N-CHANNEL MOS BROADBAND RF POWER FETs
File Size	210.44K / 11 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF176 MRF176GU MRF176GV
OCR Text	...rmal Resistance * Low Crss -- 7.0 pF Typ @ VDS = 50 V G G S (FLANGE) MRF176GU MRF176GV 200/150 W, 50 V, 500 MHz N-CHANNEL MOS BROADBA...55 -- -- dB % R2 T1 D.U.T. T2 C5 C1 C2 C6 C7 C1 -- Arco 404, 8.0 - 60 pF C2, C3, C6, ...
Description	N-CHANNEL MOS BROADBAND RF POWER FETs
File Size	176.10K / 10 Page	View it Online	Download Datasheet

				Motorola, Inc. MOTOROLA[Motorola, Inc]
Part No.	MRF18030A MRF18030ALR3 MRF18030ALSR3
OCR Text	... with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1805 - 1880 MH...55_C 85_C Pout, OUTPUT POWER (dBm) Figure 5. Power Gain versus Output Power Figure 6. Power...
Description	SEE A3282EUA-T CHOPPER STABILIZED LATCH W/TIN PLATING SEE A3282ELHLT-T RF Power Field Effect Transistors
File Size	504.66K / 8 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF18060A MRF18060ALSR3 MRF18060AR3 MRF18060ASR3
OCR Text	...cies from MRF18060ASR3 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier The RF MOSFET Line applications. To be used ...55 Figure 3. 1800 - 2000 MHz Demo Board Schematic Vbias Ground Vsupply R1 T1 C4 R5 C...
Description	MRF18060A, MRF18060AR3, MRF18060ALSR3, MRF18060ASR3 1.80-1.88 GHz, 60 W, 26 V Lateral N-Channel RF Power MOSFETs RF POWER FIELD EFFECT TRANSISTORS
File Size	399.98K / 8 Page	View it Online	Download Datasheet

				Motorola, Inc. MOTOROLA[Motorola, Inc]
Part No.	MRF18060B MRF18060BLSR3 MRF18060BR3 MRF18060BSR3
OCR Text	... with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN -...55 Figure 3. 1800 - 2000 MHz Demo Board Schematic Vbias Ground Vsupply R1 T1 C4 T2 R...
Description	HALL EFFFECT LATCH, SMD, SOT23W-3; Temp, op. min:-40(degree C); Temp, op. max:150(degree C); Pins, No. of:3; Case style:SOT-23W; Base number:3282; Bop, max:150G; Termination Type:SMD; Temperature, operating range:-40(degree C) to RoHS Compliant: Yes RF Power Field Effect Transistors
File Size	486.59K / 8 Page	View it Online	Download Datasheet

				Motorola, Inc. MOTOROLA[Motorola, Inc]
Part No.	MRF18085B MRF18085BLSR3 MRF18085BR3
OCR Text	... with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. * GSM and GSM EDGE Performance, Ful...55) Figure 1. 1.93 - 1.99 GHz Test Fixture Schematic C2 VBIAS R1 R2 C8 C1 R3 C11 C3 C10 C7 ...
Description	RF Power Field Effect Transistors
File Size	607.07K / 12 Page	View it Online	Download Datasheet

For 0.55-ohm Found Datasheets File :: 20393 Search Time::1.328ms
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