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INFINEON[Infineon Technologies AG]
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| Part No. |
BFR183T
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| OCR Text |
...eakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emit...4 0.18 1 max. 0.6 -
Unit
GHz pF
dB 1.2 2 19.5 -
Gma
-
12.5
-
|S21e|2 15.5 10... |
| Description |
NPN Silicon RF Transistor
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| File Size |
79.60K /
7 Page |
View
it Online |
Download Datasheet
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INFINEON[Infineon Technologies AG]
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| Part No. |
BFR183W
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| OCR Text |
...eakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emit...4 0.43 0.5 0 0.41 61 101 175
fF fF
Valid up to 6GHz
For examples and ready to use parameters ... |
| Description |
RF-Bipolar - NPN Silicon RF transistor for low noise, high gain broadband amplifiers
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| File Size |
78.50K /
7 Page |
View
it Online |
Download Datasheet
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Price and Availability
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