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  0.35-ghz Datasheet PDF File

For 0.35-ghz Found Datasheets File :: 19472    Search Time::4.156ms    
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    ATF-36077 ATF-36077-STR ATF-36077-TRL ATF36077 ATF-36077-TR1

HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. ATF-36077 ATF-36077-STR ATF-36077-TRL ATF36077 ATF-36077-TR1
OCR Text 0.5 dB Typical at 12 GHz 0.3 dB Typical at 4 GHz * High Associated Gain: 12 dB Typical at 12 GHz 17 dB Typical at 4 GHz * Low Parasitic Cera...35 45 -0.15 Max. 0.6 Note: 1. Measured in a fixed tuned environment with source = 0.54 at 156; ...
Description 1.5-18GHz surface mount pseudomorphic HEMT
2-18 GHz Ultra Low Noise Pseudomorphic HEMT

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    ATF-36163 ATF-36163-BLK ATF-36163-TR1

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-36163 ATF-36163-BLK ATF-36163-TR1
OCR Text ... Figure: 1 dB Typical at 12 GHz 0.6 dB Typical at 4 GHz * Associated Gain: 9.4 dB Typical at 12 GHz 15.8 dB Typical at 4 GHz * Maximum Avail...35 Max. 1.4[1] 40 -0.15 -3.5 Note: 1. Measured in a test circuit tuned for a typical device. ...
Description 1.5-18 GHz Surface Mount Pseudomorphic HEMT

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    ATF-44101

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-44101
OCR Text 0 dBm Typical P 1 dB at 4 GHz * High Gain at 1 dB Compression: 8.5 dB Typical G 1 dB at 4 GHz * High Power Efficiency: 35% Typical at 4 GHz * Hermetic Metal-Ceramic Stripline Package range. This nominally .5 micron gate length GaAs FET i...
Description 2-8 GHz Medium Power Gallium Arsenide FET

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    ATF-45101

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-45101
OCR Text 0 dBm Typical P 1 dB at 4 GHz * High Gain at 1dB Compression: 10.0 dB Typical G 1 dB at 4 GHz * High Power Efficiency: 38% Typical at 4 GHz ...35 30 20 29 P1 dB (dBm) P1 dB 25 15 G1 dB (dBm) POUT (dBm) 25 20 15 10 5 40 30 add (%) ...
Description 2-8 GHz Medium Power Gallium Arsenide FET

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    ATF-45171

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-45171
OCR Text 0 dBm Typical P 1 dB at 4 GHz * High Gain at 1dB Compression: 10.5 dB Typical G1 dB at 4 GHz * High Power Efficiency: 38% Typical at 4 GHz *...35 30 29 P1 dB (dBm) P1 dB 25 20 15 G1 dB (dBm) POUT (dBm) 25 20 15 10 5 40 30 20 10 0 0...
Description 2-8 GHz Medium Power Gallium Arsenide FET

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    ATF-46171

HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. ATF-46171
OCR Text 0 dBm Typical P 1 dB at 4 GHz * High Gain at 1 dB Compression: 11.0 dB Typical G 1 dB at 4 GHz * High Power Efficiency: 38% Typical at 4 GHz...35 26 dB 12.7 11.0 8.9 6.6 4.6 3.1 2.2 1.4 -0.1 -1.4 -2.5 -3.5 -4.3 -5.8 -7.5 -8.9 S21 Mag. 4.30 3.5...
Description 2-10 GHz Medium Power Gallium Arsenide FET(2-10 GHz 中等功率砷化FET)

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    BAP63-03

Leshan Radio Company, Ltd.
乐山无线电股份有限公
LRC[Leshan Radio Company]
Part No. BAP63-03
OCR Text ...IONS I F =50 mA V R =35 V V R = 0; f = 1 MHz V R = 1 V; f = 1 MHz V R = 20 V; f = 1 MHz I F = 0.5 mA; f = 100 MHz; note 1 I F = 1 mA; f = 100 MHz; note 1 I F = 10 mA; f = 100 MHz; note 1 |s 21| 2 TYP. 0.95 - 0.4 0.35 0.27 2.5 1.95 1.17 ...
Description Silicon PIN diode 硅PIN二极

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    BAT14-014 BAT14-034 BAT14-044 BAT14-064 BAT14-074 BAT14-094 BAT14-104 BAT14-114 BAT14-124 BAT14-4 Q62702-D1019 Q62702-D1

Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
INFINEON TECHNOLOGIES AG
Part No. BAT14-014 BAT14-034 BAT14-044 BAT14-064 BAT14-074 BAT14-094 BAT14-104 BAT14-114 BAT14-124 BAT14-4 Q62702-D1019 Q62702-D1036 Q62702-D1066 Q62702-D1005 Q62702-D1026 Q62702-D1041 Q62702-D1051 Q62702-D1056 Q62702-D1061 Q62702-P1139
OCR Text ...de capacitance f = 1 M Hz, VR = 0 CT BAT 14-014/-034 BAT 14-044/-064 BAT 14-074/-094 BAT 14-104/-114 BAT 14-124 CC - - - - - - 0.25 0.2 0.17 0.13 0.1 0.1 0.35 0.25 0.2 0.15 0.12 - dB 3 - - - - - - - - - - Values typ. - 0.42 0.43 0.44 0.46 0...
Description Silicon Schottky Diodes (Medium barrier diodes for detector and mixer applications Hermetical ceramic package) SILICON, MEDIUM BARRIER SCHOTTKY, S BAND, MIXER DIODE
Silicon Schottky Diodes (Medium barrier diodes for detector and mixer applications Hermetical ceramic package) SILICON, MEDIUM BARRIER SCHOTTKY, X BAND, MIXER DIODE
Silicon Schottky Diodes (Medium barrier diodes for detector and mixer applications Hermetical ceramic package) 硅肖特基二极管(培养基检测器和调音台的应用气密陶瓷封装垒二极管)
Silicon Schottky Diodes (Medium barrier diodes for detector and mixer applications Hermetical ceramic package) SILICON, MEDIUM BARRIER SCHOTTKY, KU BAND, MIXER DIODE
GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters 砷化镓红外Lumineszenzdioden砷化镓红外辐射器

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    BAT14-020D BAT14-050D BAT14-090D BAT14-110D BAT14-D Q62702-D1259 Q62702-D1276 Q62702-D1268 Q62702-D1285 Q62702-D3450 SIE

Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Part No. BAT14-020D BAT14-050D BAT14-090D BAT14-110D BAT14-D Q62702-D1259 Q62702-D1276 Q62702-D1268 Q62702-D1285 Q62702-D3450 SIEMENSAG-Q62702-D3450
OCR Text ...R = 10 A Diode capacitance VR = 0, f = 1 MHz BAT 14-020 D BAT 14-050 D BAT 14-090 D BAT 14-110 D VF BAT 14-020 D BAT 14-050 D BAT 14-090 D B...35 0.25 0.15 0.12 V - - pF V Values typ. max. Unit Forward voltage IF = 1 mA IF = 10 mA Sin...
Description Silicon Schottky Diodes (Beam lead technology Low dimension High performance Low barrier)
Silicon Schottky Diodes (Beam lead technology Low dimension High performance Medium barrier) 硅肖特基二极管(梁式引线技术方面的高性能低中等障碍)

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    BAT14-020S BAT14-050S BAT14-090S BAT14-110S BAT14-S Q62702-D1275 Q62702-D1284 Q62702-D1258 Q62702-D1267

Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
SIEMENS A G
Part No. BAT14-020S BAT14-050S BAT14-090S BAT14-110S BAT14-S Q62702-D1275 Q62702-D1284 Q62702-D1258 Q62702-D1267
OCR Text ...R = 10 A Diode capacitance VR = 0, f = 1 MHz BAT 14-020 S BAT 14-050 S BAT 14-090 S BAT 14-110 S VF BAT 14-020 S BAT 14-050 S BAT 14-090 S B...35 0.25 0.15 0.12 V - - pF V Values typ. max. Unit Forward voltage IF = 1 mA IF = 10 mA Sin...
Description Silicon Schottky Diodes (Beam lead technology Low dimension High performance Medium barrier)

File Size 17.04K  /  2 Page

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For 0.35-ghz Found Datasheets File :: 19472    Search Time::4.156ms    
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