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    M470L3324DU0-LB0 M470L2923DV0-LB0 M470L2923DV0-LB3 M470L3324DU0 M470L3324DU0-LA2 M470L6524DU0-LA2 M470L6524DU0-CA2 M470L

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. M470L3324DU0-LB0 M470L2923DV0-LB0 M470L2923DV0-LB3 M470L3324DU0 M470L3324DU0-LA2 M470L6524DU0-LA2 M470L6524DU0-CA2 M470L2923DV0-CA2 M470L3324DU0-CA2 M470L3324DU0-LCC M470L6524DU0-LCC M470L6524DU0-CCC M470L3324DU0-LB3 M470L6524DU0-LB0 M470L3324DU0-CCC M470L2923DV0-CCC M470L2923DV0-LCC M470L2923DV0-CB3 M470L2923DV0-CB0 M470L2923DV0-LA2 M470L6524DU0-CB0
OCR Text 0.1 june 2005 preliminary information in this document is provided in relation to samsung products, and is subject to change without notice...32m x 64 non ecc module (m470l3324du0) ................. .............. .............. ................
Description DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant) DDR SDRAM的缓冲模8 4针缓冲模块的512MBD为基础的模6 TSOP-II
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant) DDR SDRAM的缓冲模18 4针缓冲模块的512MB的D为基础的模6 TSOP-II
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant)

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    HYMD512646CP8-H HYMD512646CP8J-D43 HYMD512646CP8J-J HYMD532646CP6-H HYMD564646CP8-H HYMD564646CP8J-D43 HYMD564646CP8J-J

HYNIX SEMICONDUCTOR INC
Part No. HYMD512646CP8-H HYMD512646CP8J-D43 HYMD512646CP8J-J HYMD532646CP6-H HYMD564646CP8-H HYMD564646CP8J-D43 HYMD564646CP8J-J HYMD532646CP6J-D43 HYMD532646CP6J-J HYMD564726CP8J-D43 HYMD512726CP8J-D43 HYMD564726CP8J-J HYMD512726CP8J-J HYMD512726CP8-H
OCR Text ...64, 32M x 64 organization 2.6V 0.1V VDD and VDDQ Power supply for DDR400, 2.5V 0.2V for DDR333 and below All inputs and outputs are compatible with SSTL_2 interface Fully differential clock operations (CK & /CK) with 133/166/200MHz DLL al...
Description 184pin Unbuffered DDR SDRAM DIMMs
32M X 64 DDR DRAM MODULE, 0.75 ns, DMA184

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    HYMD512646B8-H HYMD512646B8J-D43 HYMD512646B8J-J HYMD512646BP8-H HYMD512646BP8J-D43 HYMD512646BP8J-J HYMD564646B8-H HYMD

Hynix Semiconductor
http://
Foxconn Technology Co., Ltd.
Part No. HYMD512646B8-H HYMD512646B8J-D43 HYMD512646B8J-J HYMD512646BP8-H HYMD512646BP8J-D43 HYMD512646BP8J-J HYMD564646B8-H HYMD564646B8J-D43 HYMD564646B8J-J HYMD564646BP8-H HYMD564646BP8J-D43 HYMD564646BP8J-J HYMD512726B8-H HYMD512726B8J-D43 HYMD512726B8J-J HYMD512726BP8-H HYMD512726BP8J-D43 HYMD512726BP8J-J HYMD532646B6-H HYMD532646B6J-D43 HYMD532646B6J-J HYMD532646BP6-H HYMD532646BP6J-D43 HYMD532646BP6J-J HYMD564726B8J-D43 HYMD564726BP8J-D43 HYMD564726B8-H HYMD564726B8J-J HYMD564726BP8J-J HYMD564726BP8-H
OCR Text ...64, 32M x 64 organization 2.6V 0.1V VDD and VDDQ Power supply for DDR400, 2.5V 0.2V for DDR333 and below All inputs and outputs are compatible with SSTL_2 interface Fully differential clock operations (CK & /CK) with 133/166/200MHz DLL al...
Description 1184pin Unbufferd DDR SDRAM DIMMs
128M X 64 DDR DRAM MODULE, 0.7 ns, DMA184 ROHS COMPLIANT, DIMM-184

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    HB52E328EM-A6B HB52E328EM-B6B HB52E329EM-A6B HB52E329EM-B6B

Elpida Memory
Part No. HB52E328EM-A6B HB52E328EM-B6B HB52E329EM-A6B HB52E329EM-B6B
OCR Text ... Document No. E0185H10 (Ver. 1.0) Date Published July 2001 Printed in Japan URL: http://www.elpida.com C Elpida Memory, Inc. 2001 El...32M x 8 -- x8 1 CLK 1, 2, 4, 8 4 2, 3 0 0 Non buffer VCC 10% CL = 2 12 13 14 Refresh rate/typ...
Description 256MB Unbuffered SDRAM DIMM

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    V54C3256164VAT V54C3256164VBT V54C3256404VB V54C3256404VS V54C3256404VT V54C3256164VB V54C3256164VS V54C3256164VT V54C32

Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
Part No. V54C3256164VAT V54C3256164VBT V54C3256404VB V54C3256404VS V54C3256404VT V54C3256164VB V54C3256164VS V54C3256164VT V54C3256804VB V54C3256 V54C3256804VS V54C3256804VT V54C3256164VAB V54C3256164VALT6 V54C3256164VBS V54C3256404VAB V54C3256404VAT V54C3256404VBS V54C3256404VBT V54C3256804VAB V54C3256804VAT V54C3256804VBS V54C3256804VBT
OCR Text ...A LVTTL Interface Single +3.3 V 0.3 V Power Supply Description The V54C3256(16/80/40)4V(T/S/B) is a four bank Synchronous DRAM organized...32M x 8 64M x 4 16M x 16 32M x 8 64M x 4 16M x 16 32M x 8 64M x 4 16M x 16 32M x 8 64M x 4 Proces...
Description 256Mbit SDRAM 3.3 VOLT/ TSOP II / SOC BGA / WBGA PACKAGE 16M X 16/ 32M X 8/ 64M X 4
256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4

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Part No. MT41J1G4THD-15 MT41J512M8THD-187E MT41J512M8THD-15
OCR Text ...l banks ?v dd = v ddq = +1.5v 0.075v ? 1.5v center-terminated push/pull i/o ? jedec-standard ball-out ?low-profile package ?t c of 0c to ...32m_twindie.fm - rev. d 11/09 en 2 ?2008 micron technology, inc. all rights reserved. 4gb: x4, x8 ...
Description 64M X 4 DDR DRAM, 1.5 ns, PBGA78
32M X 8 DDR DRAM, 1.87 ns, PBGA78
32M X 8 DDR DRAM, 1.5 ns, PBGA78

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Part No. MT41J1G4THD-187ED MT41J1G4THU-187A MT41J1G4THU-15A
OCR Text ...l banks ?v dd = v ddq = +1.5v 0.075v ? 1.5v center-terminated push/pull i/o ? jedec-standard ball-out ?low-profile package ?t c of 0c to ...32m_twindie.fm - rev. f 11/09 en 2 ?2008 micron technology, inc. all rights reserved. 4gb: x4, x8 ...
Description 1G X 4 DDR DRAM, PBGA78
1G X 4 DDR DRAM, PBGA82

File Size 455.67K  /  14 Page

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    HYS72T64001HP

Qimonda AG
Part No. HYS72T64001HP
OCR Text ...vious revision: 2006-03, rev. 1.0 internet data sheet rev. 1.01, 2006-09 3 03292006-zzhp-pr83 hys72t[32/64]xxxhp?[3s/3.7]?a registered d...32m 72, 64m x 72 and two rank in 64m 72 module organization and 32m 8, 64m 4 chip organi...
Description 240-Pin Registered DDR2 SDRAM Modules

File Size 1,025.25K  /  53 Page

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    H5MS1G22MFP-L3M H5MS1G32MFP-L3M H5MS1G22MFP-E3M H5MS1G22MFP-J3M H5MS1G22MFP-K3M H5MS1G32MFP-E3M H5MS1G32MFP-J3M H5MS1G32

Hynix Semiconductor
Part No. H5MS1G22MFP-L3M H5MS1G32MFP-L3M H5MS1G22MFP-E3M H5MS1G22MFP-J3M H5MS1G22MFP-K3M H5MS1G32MFP-E3M H5MS1G32MFP-J3M H5MS1G32MFP-K3M
OCR Text ...Revision History Revision No. 0.1 0.2 0.3 0.4 1.0 1.1 1.2 - Initial Draft - Defined IDD6 current spec. - Insert IDD8 Spec. value (see page...32M x 32bit) H5MS1G22MFP Series / H5MS1G32MFP Series FEATURES SUMMARY Mobile DDR SDRAM - Double...
Description 1Gbit MOBILE DDR SDRAM based on 8M x 4Bank x32 I/O

File Size 2,451.55K  /  63 Page

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    MX28F320J3

Macronix International
Part No. MX28F320J3
OCR Text 0.4, jun. 07, 2002 mx28f320j3/640j3/128j3 32m/64m/128m [x8/x16] single 3v page mode flash memory advanced information features ? 2.7v to 3.6v operation voltage ? block structure - 32 x 128kbyte erase blocks (32m) - 64 x 128kbyte erase bloc...
Description (MX28F128J3 - MX28F640J3) 128M [x8/x16] SINGLE 3V PAGE MODE FLASH MEMORY

File Size 1,089.07K  /  56 Page

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