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Freescale Semiconductors
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| Part No. |
MRF6S21100NBR1 MRF6S21100N
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| OCR Text |
0, 6/2005
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for W- CDMA base station applicat...2180 2200
IM3 (dBc), ACPR (dBc)
-31 -34 -37 -40 -43 -46 2220 2240
-9 -10 -11 -12 -13 -14
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| Description |
Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz
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| File Size |
510.14K /
12 Page |
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Z-Communications, Inc.
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| Part No. |
SMV2020L
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| OCR Text |
0.5-4.5 151 -91 -10 <7 <5 50 50 -40 to 85 oscillation frequency range phase noise @ 10 khz offset (1 hz bw, typ.) harmonic suppression (2nd,...2180 - mhz ? frequency range: ? tuning voltage: 0.5-4.5 vdc - style package sub-l ? ? ? ? a2 rev ? ... |
| Description |
LOW COST - HIGH PERFORMANCE VOLTAGE CONTROLLED OSCILLATOR
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| File Size |
143.11K /
2 Page |
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it Online |
Download Datasheet |
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Freescale Semiconductor
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| Part No. |
MRF6P21190HR6
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| OCR Text |
...idth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain -- 15.5 dB Drain Efficiency -- 26.5% IM3 @ 10 MHz Offset -- - 37 dBc @...2180 2200 -50 2220 IRL -20 IM3 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) -... |
| Description |
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
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| File Size |
422.69K /
12 Page |
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it Online |
Download Datasheet |
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Price and Availability
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