0.132 pdf Datasheet P11 Full Text Search --- IC-ON-LINE


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0.132 Datasheet PDF File

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				http:// DIODES[Diodes Incorporated]
Part No.	5KP15CA 5KP54CA 5KP40CA 5KP14CA 5KP78CA 5KP90CA 5KP100CA 5KP10CA 5KP110CA 5KP11CA 5KP120CA 5KP12CA 5KP13CA 5KP150CA 5KP16CA 5KP17CA 5KP180CA 5KP18CA 5KP20CA 5KP22CA 5KP240CA 5KP24CA 5KP26CA 5KP28CA 5KP30CA 5KP33CA 5KP36CA 5KP43CA 5KP45CA 5KP48CA 5KP50CA 5KP50CAS 5KP51CA 5KP58CA 5KP60CA 5KP64CA 5KP65CA 5KP70CA 5KP75CA 5KP80CA 5KP85CA
OCR Text	0(C)A(S) - 5KP240(C)A(S) 5000W TRANSIENT VOLTAGE SUPPRESSOR Features * * * * * * * 5000W Peak Pulse Power Dissipation 5.0V - 170V Standoff...132 140 180 218 280 Notes: 4. Suffix C denotes Bi-directional device. 5. VBR measured with IT ...
Description	5000W TRANSIENT VOLTAGE SUPPRESSOR
File Size	65.66K / 3 Page	View it Online	Download Datasheet

				SMSC[SMSC Corporation] ETC SMSC, Corp.
Part No.	81C17 COM81C17
OCR Text	...rite to address zero (i.e. RS = 0) is interpreted as a Mode Control word. The second write is interpreted as Interrupt Mask word. The third ...132 88 66 44 33 16 8 Baud Rate Frequency 16X Clock Frequency 16X Clock Percent Error Duty Cycle % Di...
Description	TWENTY PIN UART (TPUART) TWENTY PIN UART (TPUART) 第二十七密码器（UART TPUART
File Size	69.36K / 18 Page	View it Online	Download Datasheet

				Panasonic Corporation Panasonic Semiconductor
Part No.	AN8837SB
OCR Text	...et with fewer external parts. (0.45) 1 28 0.30.1 s Features * Operating supply voltage VCC = 2.7 V to 5.5 V * Balance adjustment...132 VRF-OF GRF GRF GRFF GRFF GEQ1 GEQ2 VCC = 3 V VCC = 3 V VCC = 3 V VCC = 3 V f = 500 kHz, 3 MHz ...
Description	Low power consumption CD-DA head amplifier IC for 3-beam system optical pick-up
File Size	68.71K / 7 Page	View it Online	Download Datasheet

				Panasonic Corporation PANASONIC[Panasonic Semiconductor]
Part No.	AN8839 AN8839NSB
OCR Text	...with fewer external parts. 1 (0.45) Unit: mm 28 0.30.1 s Features * Operating supply voltage VCC = 2.4 V to 5.5 V * Balance adjus...132 VRF-OF GRF GRFF GEQ1 IRFO VCC = 3 V VCC = 3 V VCC = 3 V f = 500 kHz, 3 MHz VCC = 3 V f = 500 k...
Description	DIODE ZENER TRIPLE ISOLATED 200mW 20Vz 6.2mA-Izt 0.05 0.1uA-Ir 15 SOT-363 3K/REEL CD-DA head amplifier IC for 3-beam system optical pick-up
File Size	62.80K / 7 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8020B2FLL APT8020LFLL
OCR Text	0.200W POWER MOS 7TM FREDFET B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power...132 30 40 690 5.52 300 38 50 (Repetitive and Non-Repetitive) 1 4 800 Volts Watts W/C C Amps ...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	58.72K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
Part No.	APT8024B2VFR APT8024LVFR APT50M85B2VFR APT50M85LVFR
OCR Text	0.240W POWER MOS V (R) FREDFET B2VFR Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs...132 30 40 625 5.0 -55 to 150 300 33 50 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/C C Am...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 800V 33A 0.240 Ohm
File Size	39.43K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8024B2VR APT8024LVR
OCR Text	0.240W POWER MOS V (R) Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology ...132 30 40 625 5.0 -55 to 150 300 33 50 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/C C Am...
Description	POWER MOS V 800V 33A 0.240 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	38.06K / 2 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-10100 ATF-10100-GP3
OCR Text	0.5 - 12 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10100 Features * Low Noise Figure: 0.5 dB Typical at 4 GHz * Low Bias: V...132 .133 .133 .135 .143 .148 .154 .162 .168 .177 .184 .190 .201 S22 Ang. 64 52 45 41 36 31 25 22 19 ...
Description	0.5-12 GHz Low Noise Gallium Arsenide FET
File Size	46.17K / 4 Page	View it Online	Download Datasheet

				HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	ATF-13100 ATF-13100-GP3
OCR Text	...s GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 250 microns. Proven gold based metallization systems a...132 -151 -167 173 155 136 116 98 83 72 63 dB 13.4 13.4 13.1 12.9 12.4 12.0 11.4 10.9 10.3 9.7 9.0 8....
Description	2-18 GHz Low Noise Gallium Arsenide FET(2-18 GHz 浣??澹扮???? FET) 2-18 GHz Low Noise Gallium Arsenide FET(2-18 GHz 低噪声砷化镓 FET) 2-18 GHz的低噪声砷化镓场效应管（2-18 GHz的低噪声砷化镓场效应管）
File Size	38.39K / 3 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-13336 ATF-13336-STR ATF-13336-TR1
OCR Text	...2 GHz * High Associated Gain: 9.0 dB Typical at 12 GHz * High Output Power: 17.5 dBm Typical P 1 dB at 12 GHz * Cost Effective Ceramic Micro...132 .137 .147 .150 .145 .133 .121 .114 .112 .110 S22 Ang. 57 33 25 12 1 -18 -33 -48 -63 -78 -95 -107...
Description	2-16 GHz Low Noise Gallium Arsenide FET
File Size	41.75K / 3 Page	View it Online	Download Datasheet

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