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  0.0187 Datasheet PDF File

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    2SA1110

Savantic, Inc.
Part No. 2SA1110
OCR Text ...n collector VALUE -120 -120 -5 -0.5 -1.0 1.2* 150 -55~150 UNIT V V V A A W Note) *: Without heat sink SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified ...
Description Silicon PNP Power Transistors

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    2SA1111 2SA1112

Savantic, Inc.
Part No. 2SA1111 2SA1112
OCR Text ...ransition frequency IE=-10A ,IC=0 IC=-0.5A; IB=-50mA IC=-0.5A; IB=-50mA VCB=-120V; IE=0 VEB=-4V; IC=0 IC=-150mA ; VCE=-10V IC=-500mA ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz IC=50mA ; VCE=-10V IC=-0.1mA ,IB=0 CONDITIONS 2SA1111 2SA1112 SYMBOL...
Description Silicon PNP Power Transistors

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    2SA1116

Inchange Semiconductor Company Limited
Part No. 2SA1116
OCR Text ...kdown Voltage IC= -50mA; IB= 0 -200 V VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -1A -3.0 V ICBO Collector Cutoff Current VCB= -200V; IE= 0 -100 A IEBO Emitter Cutoff Current ...
Description isc Silicon PNP Power Transistor

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    2SA1116

Savantic, Inc.
Part No. 2SA1116
OCR Text ...eakdown voltage IC=-50mA ;IB=0 IC=-10A; IB=-1A VCB=-200V; IE=0 VEB=-6V; IC=0 IC=-5A ; VCE=-4V IC=-0.5A ; VCE=-12V -200 V Collector-emitter saturation voltage -3.0 V Collector cut-off current -0.1 mA Emitter cut...
Description Silicon PNP Power Transistors

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    2SA1117

Savantic, Inc.
Part No. 2SA1117
OCR Text ...eakdown voltage IC=-50mA ;IB=0 -200 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ;IC=0 -6 V VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A -2.0 V ICBO Collector cut-off current...
Description Silicon PNP Power Transistors

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    2SA1193 2SA1193K 2SA1193KTZ-E

Renesas Electronics Corporation
Part No. 2SA1193 2SA1193K 2SA1193KTZ-E
OCR Text ... PC Tj Tstg Ratings -60 -60 -7 -0.5 -1.0 0.9 150 -55 to +150 Unit V V V A A W C C Rev.2.00 Aug 10, 2005 page 1 of 5 2SA1193(K) Electrical Characteristics (Ta = 25C) Item Collector to emitter breakdown voltage Collector cutoff cur...
Description Silicon PNP Epitaxial, Darlington

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    2SA1201

SeCoS Halbleitertechnologie GmbH
Part No. 2SA1201
OCR Text ...sipation Value -120 -120 -5 -0.8 0.5 150 -55-150 Units V V V A W REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 ...
Description PNP Silicon Epitaxial Planar Transistor

File Size 222.07K  /  2 Page

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    2SA1360

Savantic, Inc.
Part No. 2SA1360
OCR Text ...requency CONDITIONS IC=-1mA ;IB=0 IC=-10mA; IB=-1mA IC=-10mA ; VCE=-5V VCB=-150V; IE=0 VEB=-5V; IC=0 IC=-10mA ; VCE=-5V IE=0 ; VCB=-10V f=1MHz IC=-10mA ; VCE=-10V 80 MIN -150 2SA1360 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE Cob fT ...
Description Silicon PNP Power Transistors

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    2SA1576F

SeCoS Halbleitertechnologie GmbH
Part No. 2SA1576F
OCR Text ...323 Dim A A Min 1.800 1.150 0.800 0.300 1.200 0.000 0.100 0.350 0.590 2.000 0.280 Max 2.200 1.350 1.000 0.400 1.400 0.100 0.250 0.500 0.720 2.400 0.420 B L BS COLLECTOR C D 2 3 3 Top View 1 BASE 1 G H J K V ...
Description PNP Silicon General Purpose Transistor

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    2SA1718

Savantic, Inc.
Part No. 2SA1718
OCR Text ...mperature Storage temperature 2.0 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -100 -100 -7 -5 -10 -0.5 20 W UNIT V V V A A A SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACT...
Description Silicon PNP Power Transistors

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