| |
|
 |
HAMAMATSU[Hamamatsu Corporation]
Hamamatsu Photonics
|
| Part No. |
L8601-01
|
| OCR Text |
...W
Value/Description 20 to 90 0 to 250a 10 (isowatts) 7 (5 m at 4 W) 39 9.5 1 Continuous
Unit kV A W m degree mm mSv/h Max. --
IX-RAY TUBE UNIT
Parameter X-ray Tube Cooling Method Window Material Target Material Cathode Material Wi... |
| Description |
90KV MICROFOCUS X-RAY SOURCE
|
| File Size |
513.20K /
4 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
POLYFET[Polyfet RF Devices]
|
| Part No. |
L8701P
|
| OCR Text |
...DE RF POWER LDMOS TRANSISTOR 30.0 Watts Single Ended Package Style S08 P HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE
o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C )
Total Device Dissipation 60 Watts Junction to Case Thermal Resistance o 2.50 ... |
| Description |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
| File Size |
40.60K /
2 Page |
View
it Online |
Download Datasheet |
| |
|
|
POLYFET[Polyfet RF Devices]
|
| Part No. |
L8711P
|
| OCR Text |
...ODE RF POWER LDMOS TRANSISTOR 7.0 Watts Single Ended Package Style S08 P HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE
o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C )
Total Device Dissipation 60 Watts Junction to Case Thermal Resistance o 2.50 ... |
| Description |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
| File Size |
39.23K /
2 Page |
View
it Online |
Download Datasheet |
| |
|
|
POLYFET[Polyfet RF Devices]
|
| Part No. |
L8801P
|
| OCR Text |
...DE RF POWER LDMOS TRANSISTOR 10.0 Watts Single Ended Package Style S08 P HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE
o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C )
Total Device Dissipation 30 Watts Junction to Case Thermal Resistance o 5.00 ... |
| Description |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
| File Size |
39.12K /
2 Page |
View
it Online |
Download Datasheet |
| |
|
|
HAMAMATSU[Hamamatsu Corporation]
|
| Part No. |
L8957
|
| OCR Text |
... temperature Tstg
Value 5 80 0.67 0.5 7 150 -30 to +85 -40 to +100
Unit V mA mA/C A mA/C mW C C
I Electrical and optical characteristics (Ta=25 C)
Parameter Symbol Condition Min. Typ. Max. Unit Peak emission wavelength I.=50 mA ... |
| Description |
Low cost LED ideal for optical encoders
|
| File Size |
109.22K /
2 Page |
View
it Online |
Download Datasheet |
| |
|
|
Hamamatsu Photonics
HAMAMATSU[Hamamatsu Corporation]
|
| Part No. |
L8958-14 L8958 L8958-11 L8958-12 L8958-13
|
| OCR Text |
...0 L8958 Typ. 1.1 5 1.5 1310 250 0.4 Max. 1.3 15 1330 100 Unit V mA mW nm ps mA nA
I Package lineup
Configuration Package Fiber Connector Type Type Length Type Dimensional outline -11 -12
SC
-13 Coaxial SM (9.5/125) f0.9 1 m +20 c... |
| Description |
High output power: 1.5 mW,pigtail type
|
| File Size |
124.35K /
2 Page |
View
it Online |
Download Datasheet |
| |
|
|
LRC[Leshan Radio Company]
|
| Part No. |
L9012QLT1 L9012LT1 L9012LT1G L9012PLT1
|
| OCR Text |
...0mA,IB=50mA) Hfe VCE(S) 100 600 0.6 V
NOTE:
* HFE
P 100~200
Q
R
S 300~600
150~300 200~400
SOT-23 (TO-236AB)
A L
3
NOTES:
1. CONTROLLING DIMENSION: MILLIMETERS
BS
1 2
2. LEAD THICKNESS SPECIFIED PER L / F... |
| Description |
General Purpose Transistors PNP Silicon
|
| File Size |
47.55K /
2 Page |
View
it Online |
Download Datasheet |
| |
|
|
LRC[Leshan Radio Company]
|
| Part No. |
L9013QLT1 L9013LT1
|
| OCR Text |
...0mA,IB=50mA) Hfe VCE(S) 100 600 0.6 V
NOTE:
*
HFE
P
100~200
Q
150~300
R
200~400
S
300~600
SOT-23 (TO-236AB)
A L
3
NOTES:
1. CONTROLLING DIMENSION: MILLIMETERS
BS
1 2
2. LEAD THICKNESS SPECIFIED PER L /... |
| Description |
General Purpose Transistors NPN Silicon
|
| File Size |
113.76K /
2 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
