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  0.0084 Datasheet PDF File

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    Panasonic
Part No. 2SC4960
OCR Text 0.7) Unit: mm 5.00.2 (3.2) 11.00.2 Features * High-speed switching * High collector-base voltage (Emitter open) VCBO * Satisfactory linearity of forward current transfer ratio hFE * Full-pack package with outstanding insulation, wh...
Description Power Device - Power Transistors - Swicthing

File Size 92.86K  /  5 Page

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    Renesas
Part No. 2SC4964
OCR Text ...- Typ -- -- -- -- 250 200 1.2 2.0 Max -- 1 1 10 600 300 1.6 -- mV pF Unit V A mA A Test conditions I C = 10 A, IE = 0 VCB = 10 V, IE = 0 VCE = 8 V, RBE = VEB = 3 V, IC = 0 VCE = 5 V, IC = 5 mA I C = 80 mA, IB = 5 mA VCB = 5 V, IE = 0, f = 1...
Description Transistors>Amplifiers/Bipolar

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    Renesas
Part No. 2SC4965
OCR Text ...est conditions I C = 10 A, IE = 0 VCB = 10 V, IE = 0 VCE = 8 V, RBE = VEB = 3 V, IC = 0 VCE = 5 V, IC = 5 mA I C = 80 mA, IB = 5 mA VCB = 5 V, IE = 0, f = 1 MHz I B = 2.5 mA, f = 1 kHz See characteristic curves of 2SC4964. 2 2SC496...
Description Transistors>Amplifiers/Bipolar

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    2SC4965

Hitachi Semiconductor
Part No. 2SC4965
OCR Text ...est conditions I C = 10 A, IE = 0 VCB = 10 V, IE = 0 VCE = 8 V, RBE = VEB = 3 V, IC = 0 VCE = 5 V, IC = 5 mA I C = 80 mA, IB = 5 mA VCB = 5 V, IE = 0, f = 1 MHz I B = 2.5 mA, f = 1 kHz See characteristic curves of 2SC4964. 2 2SC49...
Description Silicon NPN Transistor

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    SANYO
Part No. 2SC4984
OCR Text ...to-emitter saturation voltage. 0.4 3 1.5 0.5 2 3.0 0.75 1 1.0 2.5 4.25max 0.4 Specifications ( ) : 2SA1882 Absolute Maximum Ratings at Ta = 25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Ba...
Description NPN Epitaxial Planar Silicon Transistors Low-Frequency General-Purpose Amplifier Applications

File Size 53.43K  /  6 Page

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    2SC5186-T1 2SC5186

NEC
Part No. 2SC5186-T1 2SC5186
OCR Text ...1 V, IC = 3 mA, f = 2 GHz 1.6 0.1 0.8 0.1 2 1.6 0.1 1.0 0.2 +0.1 -0 0.5 0.3 +0.1 -0 0.15 +0.1 -0.05 (Units: mm) * Ultra Super Mini-Mold package ORDERING INFORMATION PART NUMBER 2SC5186 2SC5186-T1 86 0.5 QUANTITY 50 ...
Description NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

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    2SC5335 2SC5335TENTATIVE

Panasonic Corporation
Panasonic Semiconductor
Part No. 2SC5335 2SC5335TENTATIVE
OCR Text 0.15 1.05 2.50.1 0.05 (1.45) 0.8 0.5 4.50.1 0.7 4.0 s Features q q 0.65 max. 1.0 1.0 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 0.2 s Absolute Maximum Rating...
Description Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay
Silicon NPN epitaxial planer type(For low-frequency output amplification)

File Size 37.51K  /  2 Page

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    2SC5337

NEC
Part No. 2SC5337
OCR Text ...EO VEBO IC PT Tj Tstg Note1 0.8MIN. Rating 30 15 3.0 250 2.0 150 -65 to +150 Unit V V V mA W C C 0.42 0.06 1.5 3.0 0.46 0.06 0.42 0.06 0.250.02 PIN CONNECTIONS E: Emitter C: Collector B: Base Note 1. 0.7 mm x 16 cm ...
Description NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER

File Size 66.85K  /  9 Page

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    Panasonic
Part No. 2SC5472
OCR Text 0.425) For low-voltage low-noise high-frequency oscillation I Features * High transition frequency fT * High gain of 8.2 dB and low noise of 1.8 dB at 3 V * Optimum for RF amplification of a portable telephone and pager * S-mini type pa...
Description Silicon NPN epitaxial planer type(For low-voltage low-noise high-frequency oscillation)

File Size 56.71K  /  3 Page

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    Panasonic
Part No. 2SC5474
OCR Text ...1.60.15 s Features q q q 0.4 0.80.1 0.4 0.2-0.05 0.15-0.05 +0.1 q High transition frequency fT. High gain of 8.9dB and low noise of 1.8dB at 3V. Optimum for RF amplification of a portable telephone and pager. SS-Mini ty...
Description Silicon NPN epitaxial planer type(For low-voltage low-noise high-frequency oscillation)

File Size 39.30K  /  3 Page

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