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TriQuint Semiconductor,Inc.
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| Part No. |
TGA2922-SG
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| OCR Text |
...Gain
25 20
Gain (dB)
6 3 0 -3 -6 -9 -12 4 4.5 5 5.5 6 6.5 7
Output Input
10 5 0 -5 -10 -15 -20
Frequency (GHz)
40 800 700 6...9GHz 6.0GHz
Output Power per tone (dBm)
IDS (mA)
Return Loss (dB)
15
4
TriQuint Se... |
| Description |
2 Watt 802.11a Packaged Amplifier
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| File Size |
314.91K /
12 Page |
 View
it Online |
Download Datasheet
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Infineon
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
BFP280W Q62702-F1504
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| OCR Text |
...P 280W REs Q62702-F1504 1=E 2=C 3=E 4=B
Package SOT-343
Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage ...9GHz VCE = Parameter
22 10V 2V dB
Power Gain Gma, Gms = f(IC)
f = 1.8GHz VCE = Parameter
17 dB... |
| Description |
NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems)
From old datasheet system
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems)
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| File Size |
59.70K /
7 Page |
View
it Online |
Download Datasheet |
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SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
BFP280 Q62702-F1378
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| OCR Text |
...FP 280 REs Q62702-F1378 1=C 2=E 3=B 4=E
Package SOT-143
Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage ...9GHz VCE = Parameter
22 10V 2V dB
Power Gain Gma, Gms = f(IC)
f = 1.8GHz VCE = Parameter
18
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| Description |
NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems)
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) NPN硅射频晶体管（对于低噪音，在移动通信系统的低功耗放大器
NPN Silicon RF Transistor (For low noise low-power amplifiers in mobile communication systems)
From old datasheet system
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| File Size |
60.12K /
7 Page |
View
it Online |
Download Datasheet |
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