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For w static Found Datasheets File :: 62749    Search Time::2.563ms    
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    RJK1028DPA RJK1028DPA-00-J5A

Renesas Electronics Corporation
Part No. RJK1028DPA RJK1028DPA-00-J5A
OCR Text ...el dissipation pch note3 10 w channel to case thermal impedance ch-c note3 12.5 c/w channel temperature tch 150 c storage t...static drain to source on state resistance r ds(on) ? 135 180 m i d = 2 a, v gs = 4.5 v n...
Description Silicon N Channel Power MOS FET Power Switching

File Size 102.17K  /  7 Page

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    RJK1028DSP

Renesas Electronics Corporation
Part No. RJK1028DSP
OCR Text ...l dissipation pch note3 1.8 w channel to ambient thermal impedance ? ch-a note3 70 ?c/w channel temperature tch 150 ?c storage...static drain to source on state resistance r ds(on) ? 135 180 m ? i d = 1.5 a, v gs = 4.5 v...
Description Silicon N Channel Power MOS FET Power Switching

File Size 81.44K  /  7 Page

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    Renesas
Part No. RJL5012DPE
OCR Text ...l dissipation pch note2 100 w channel to case thermal impedance ? ch-c 1.25 ?c/w channel temperature tch 150 ?c storage temperat...static drain to source on state resistance r ds(on) ? 0.56 0.70 ? i d = 6 a, v gs = 10 v no...
Description N-Channel Power MOSFET

File Size 135.63K  /  7 Page

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    RJL5012DPE

Renesas Electronics Corporation
Part No. RJL5012DPE
OCR Text ...l dissipation pch note2 100 w channel to case thermal impedance ? ch-c 1.25 ?c/w channel temperature tch 150 ?c storage temperat...static drain to source on state resistance r ds(on) ? 0.56 0.70 ? i d = 6 a, v gs = 10 v no...
Description Silicon N Channel MOS FET High Speed Power Switching

File Size 74.90K  /  7 Page

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    Renesas
Part No. RJL5013DPE
OCR Text ...l dissipation pch note2 100 w channel to case thermal impedance ch-c 1.25 c/w channel temperature tch 150 c storage temperatu...static drain to source on state resistance r ds(on) ? 0.42 0.51 i d = 7 a, v gs = 10 v not...
Description N-Channel Power MOSFET

File Size 156.67K  /  7 Page

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    RJL5014DPK11

Renesas Electronics Corporation
Part No. RJL5014DPK11
OCR Text ...l dissipation pch note2 150 w channel to case thermal impedance ? ch-c 0.833 ?c/w channel temperature tch 150 ?c storage tempera...static drain to source on state resistance r ds(on) ? 0.32 0.40 ? i d = 9.5 a, v gs = 10 v ...
Description Silicon N Channel MOS FET High Speed Power Switching

File Size 78.78K  /  7 Page

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    RJL6013DPE RJL6013DPE-15

Renesas Electronics Corporation
Part No. RJL6013DPE RJL6013DPE-15
OCR Text ...l dissipation pch note2 100 w channel to case thermal impedance ? ch-c 1.25 ?c/w channel temperature tch 150 ?c storage temperat...static drain to source on state resistance r ds(on) ? 0.66 0.81 ? i d = 5.5 a, v gs = 10 v ...
Description Silicon N Channel MOS FET High Speed Power Switching
   Silicon N Channel MOS FET High Speed Power Switching

File Size 76.71K  /  7 Page

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    TT8U2 TT8U2TCR

Rohm
Central Semiconductor, Corp.
Part No. TT8U2 TT8U2TCR
OCR Text ...0 ? c power dissipation p d 1.0 w / element *1 pw ? 10 ? s, duty cycle ? 1% *2 mounted on a ceramic board. <di> symbol limits unit repetiti...static drain-source on-state resistance r ds (on) * * * * * * * * * 2/5 2011.04 - rev.a www.rohm....
Description 1.5V Drive Pch SBD MOSFET
2400 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET TSST8, 8 PIN

File Size 1,155.11K  /  6 Page

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    TT8U212

Rohm
Part No. TT8U212
OCR Text ...50 ?c power dissipation p d 1.0 w / element *1 pw ? 10? s, duty cycle ? 1% *2 mounted on a ceramic board. <di> symbol limits unit repetitiv...static drain-source on-state resistance r ds (on) * * * * * * * * * 2/5 2012.02 - rev.b www.rohm....
Description 1.5V Drive Pch SBD MOSFET
   1.5V Drive Pch SBD MOSFET

File Size 490.85K  /  6 Page

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    LG
Part No. w2234S
OCR Text ... width: 509.3mm depth: 206mm (w base), 63.5mm (w/o base), 60.5mm (w/o stand&base) height: 431.3mm (w base), 419.8mm (w/o base), 338....static electricity. such components commonly are called electrostatically sensitive (es) devices. ...
Description Color Monitor Service Manual

File Size 1,126.21K  /  39 Page

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