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Excelics Semiconductor
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| Part No. |
EIC6472-8
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| OCR Text |
...l resistance 3 3.5 4 o c/w notes: 1. tested with 100 ohm gate resistor. 2. s.c.l. = single carrier level. 3. overall rth dep...8 specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guig... |
| Description |
Internally Matched Power FET
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| File Size |
182.62K /
4 Page |
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INTEGRATED DEVICE TECHNOLOGY INC
ICST[Integrated Circuit Systems]
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| Part No. |
M672-8-AA M672-4-AA M672-2-AZ M672 M672-2-BA
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| OCR Text |
...
Communications Modules
w w w. i c s t . c o m
tel (508) 852-5400
GND
3
4
Integrated Circuit Systems, Inc.
M67...8, or 2) is specified as part of the order number. Format is M672-d-xx. See Ordering Information on ... |
| Description |
VOLTAGE CONTROLLED CLOCK SAw OSCILLATOR, 155.52 MHz
VCSO wITH SELECTABLE OUTPUT FREQUENCY DIVIDER
From old datasheet system
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| File Size |
143.33K /
4 Page |
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Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
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| Part No. |
MH16S64PHB-8 MH16S64PHB-7
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| OCR Text |
...,ba1,a<11:0> d0 - d7 ck1 ck3 10 w 4sdrams+3.3pf 4sdrams+3.3pf 10pf 10pf d7 ck2 10 w 10 w 10 w 10 w sa0 sa1 sa2 serial pd scl sda a0 a1 a2 wp 47k
mh16s64phb -7,-8, -10 1073741824-bit (16777216 - word by 64-bit)synchronousdram mitsubishi l... |
| Description |
1073741824-BIT (16777216 - wORD BY 64-BIT)SynchronousDRAM 1073741824位（16777216 -文字4位）SynchronousDRAM
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| File Size |
602.17K /
55 Page |
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Mitsubishi Electric Corporation
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| Part No. |
MH8S72DBFD-8
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| OCR Text |
...mitsubishi electric cke0 /s0,2 /w /ras /cas dqm0-7 ck0 add vdd vss d0 to d8 d0 to d8 3 dq4 dq5 dq6 dq7 dq0 dq1 dq2 dq3 dq28 dq29 dq30 dq31 d...8 d0-2,5-6 d3-4,7-8 vdd rege 10k sa0 sa1 sa2 serial pd scl sda a0 a1 a2 wp 47k dq12 dq13 dq14 dq15 d... |
| Description |
603,979,776-BIT ( 8,388,608-wORD BY 72-BIT ) Synchronous DYNAMIC RAM
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| File Size |
956.83K /
56 Page |
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Mitsubishi Electric Corporation
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| Part No. |
BCR08AS-8
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| OCR Text |
...5 -40 ~ +125 48
Unit A A A2s w w V A C C mg
V1. Gate open.
Feb.1999
MITSUBISHI SEMICONDUCTOR TRIAC
BCR08AS-8
LOw POwER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol IDRM VTM VFGT ! V... |
| Description |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
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| File Size |
110.35K /
5 Page |
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Price and Availability
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