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BMS221 0A5E3 25M4X7 SIG60 TSOP1136 ST20P18 S1M8822 XN511
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  sm-si... Datasheet PDF File

For sm-si... Found Datasheets File :: 958    Search Time::1.313ms    
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    IRF[International Rectifier]
Part No. IRH9250
OCR Text ...haracteristics Parameter IS I SM VSD t rr Q RR t on Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forwar...Si) are identical and are presented in Table 1. The values in Table 1 will be met for either of the ...
Description TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.315ohm, Id=-14A)

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    IRF[International Rectifier]
Part No. IRHF7310SE
OCR Text ...haracteristics Parameter IS I SM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Min. Typ. Max. Units -- -- ...Si) are identical and are presented in Table 1. The values in Table 1 will be met for either of the ...
Description REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR

File Size 35.65K  /  4 Page

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    IRF[International Rectifier]
Part No. IRHI7360SE
OCR Text ...haracteristics Parameter IS I SM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Min. Typ. Max. Units -- -- ...Si) are identical and are presented in Table 1, column 1, IRHI7360SE. The values in Table 1 will be ...
Description TRANSISTOR N-CHANNEL(BVdss=400V, Rds(on)=0.20ohm, Id=24.3A)

File Size 83.22K  /  4 Page

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    IRF[International Rectifier]
Part No. IRHI7460SE
OCR Text ...haracteristics Parameter IS I SM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Min. Typ. Max. Units -- -- ...Si) are identical and are presented in Table 1. The values in Table 1 will be met for either of the ...
Description TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.32ohm, Id=20A)

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    IRF[International Rectifier]
Part No. IRHM7264SE
OCR Text ...haracteristics Parameter IS I SM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Min. Typ. Max. Units -- -- ...Si) are identical and are presented in Table 1. The values in Table 1 will be met for either of the ...
Description TRANSISTOR N-CHANNEL(BVdss=250V, Rds(on)=0.087ohm, Id=35A*)

File Size 91.23K  /  4 Page

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    IRF[International Rectifier]
Part No. IRHM9064
OCR Text ...haracteristics Parameter IS I SM VSD trr QRR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward V...Si) are identical and are presented in Table 1. The values in Table 1 will be met for either of the ...
Description TRANSISTOR P-CHANNEL(BVdss=-60V, Rds(on)=0.060ohm, Id=-35*A)

File Size 101.13K  /  4 Page

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    IRF[International Rectifier]
Part No. IRHM9160
OCR Text ...haracteristics Parameter IS I SM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Min. Typ. Max. Units -- -- ...Si) are identical and are presented in Table 1. The values in Table 1 will be met for either of the ...
Description TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.087ohm, Id=-35*A)

File Size 87.31K  /  4 Page

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    IRF[International Rectifier]
Part No. IRHN7C50SE IRHN2C50SE
OCR Text ...haracteristics Parameter IS I SM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Min. Typ. Max. Units -- -- ...Si) and 1 x 105 Rads (Si) are identical and are presented in Table 1, column 1, IRHN2C50SE and IRHN7...
Description TRANSISTOR N-CHANNEL(BVdss=600V, Rds(on)=0.60ohm, Id=10.4A)

File Size 80.62K  /  4 Page

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    IRF[International Rectifier]
Part No. IRHN8130 IRHN7130
OCR Text ...haracteristics Parameter IS I SM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Min. Typ. Max. Units -- -- ...Si) are identical and are presented in Table 1, column 1, IRHN7130. Device performance limits at a p...
Description TRANSISTOR N-CHANNEL(BVdss=100V, Rds(on)=0.18ohm, Id=14)

File Size 444.31K  /  14 Page

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    International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRHN8230 IRHN7230
OCR Text ...haracteristics Parameter IS I SM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Min. Typ. Max. Units -- -- ...Si) are identical and are presented in Table 1, column 1, IRHN7230. Device performance limits at a p...
Description TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=9.0A) 晶体管N沟道(BVdss \u003d 200V的电压,的Rds(on)\u003d 0.40ohm,身份证\u003d 9.0,9.0

File Size 450.04K  /  14 Page

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