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IRF[International Rectifier]
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| Part No. |
IRH9250
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| OCR Text |
...haracteristics
Parameter
IS I SM VSD t rr Q RR t on Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forwar...Si) are identical and are presented in Table 1. The values in Table 1 will be met for either of the ... |
| Description |
TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.315ohm, Id=-14A)
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| File Size |
101.45K /
4 Page |
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IRF[International Rectifier]
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| Part No. |
IRHF7310SE
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| OCR Text |
...haracteristics
Parameter
IS I SM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode)
Min. Typ. Max. Units
-- -- ...Si) are identical and are presented in Table 1. The values in Table 1 will be met for either of the ... |
| Description |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
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| File Size |
35.65K /
4 Page |
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IRF[International Rectifier]
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| Part No. |
IRHI7360SE
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| OCR Text |
...haracteristics
Parameter
IS I SM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode)
Min. Typ. Max. Units
-- -- ...Si) are identical and are presented in Table 1, column 1, IRHI7360SE. The values in Table 1 will be ... |
| Description |
TRANSISTOR N-CHANNEL(BVdss=400V, Rds(on)=0.20ohm, Id=24.3A)
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| File Size |
83.22K /
4 Page |
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IRF[International Rectifier]
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| Part No. |
IRHI7460SE
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| OCR Text |
...haracteristics
Parameter
IS I SM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode)
Min. Typ. Max. Units
-- -- ...Si) are identical and are presented in Table 1. The values in Table 1 will be met for either of the ... |
| Description |
TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.32ohm, Id=20A)
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| File Size |
83.17K /
4 Page |
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IRF[International Rectifier]
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| Part No. |
IRHM7264SE
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| OCR Text |
...haracteristics
Parameter
IS I SM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode)
Min. Typ. Max. Units
-- -- ...Si) are identical and are presented in Table 1. The values in Table 1 will be met for either of the ... |
| Description |
TRANSISTOR N-CHANNEL(BVdss=250V, Rds(on)=0.087ohm, Id=35A*)
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| File Size |
91.23K /
4 Page |
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IRF[International Rectifier]
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| Part No. |
IRHM9064
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| OCR Text |
...haracteristics
Parameter
IS I SM VSD trr QRR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward V...Si) are identical and are presented in Table 1. The values in Table 1 will be met for either of the ... |
| Description |
TRANSISTOR P-CHANNEL(BVdss=-60V, Rds(on)=0.060ohm, Id=-35*A)
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| File Size |
101.13K /
4 Page |
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IRF[International Rectifier]
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| Part No. |
IRHM9160
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| OCR Text |
...haracteristics
Parameter
IS I SM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode)
Min. Typ. Max. Units
-- -- ...Si) are identical and are presented in Table 1. The values in Table 1 will be met for either of the ... |
| Description |
TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.087ohm, Id=-35*A)
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| File Size |
87.31K /
4 Page |
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IRF[International Rectifier]
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| Part No. |
IRHN7C50SE IRHN2C50SE
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| OCR Text |
...haracteristics
Parameter
IS I SM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode)
Min. Typ. Max. Units
-- -- ...Si) and 1 x 105 Rads (Si) are identical and are presented in Table 1, column 1, IRHN2C50SE and IRHN7... |
| Description |
TRANSISTOR N-CHANNEL(BVdss=600V, Rds(on)=0.60ohm, Id=10.4A)
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| File Size |
80.62K /
4 Page |
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IRF[International Rectifier]
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| Part No. |
IRHN8130 IRHN7130
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| OCR Text |
...haracteristics
Parameter
IS I SM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode)
Min. Typ. Max. Units
-- -- ...Si) are identical and are presented in Table 1, column 1, IRHN7130. Device performance limits at a p... |
| Description |
TRANSISTOR N-CHANNEL(BVdss=100V, Rds(on)=0.18ohm, Id=14)
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| File Size |
444.31K /
14 Page |
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International Rectifier, Corp. IRF[International Rectifier]
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| Part No. |
IRHN8230 IRHN7230
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| OCR Text |
...haracteristics
Parameter
IS I SM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode)
Min. Typ. Max. Units
-- -- ...Si) are identical and are presented in Table 1, column 1, IRHN7230. Device performance limits at a p... |
| Description |
TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=9.0A) 晶体管N沟道(BVdss \u003d 200V的电压,的Rds(on)\u003d 0.40ohm,身份证\u003d 9.0,9.0
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| File Size |
450.04K /
14 Page |
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