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  rg-9 Datasheet PDF File

For rg-9 Found Datasheets File :: 32962    Search Time::1.547ms    
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    IRF3711 IRF3711L IRF3711S

IRF[International Rectifier]
Part No. IRF3711 IRF3711L IRF3711S
OCR Text ...- VDD = 10V --- ID = 30A ns --- RG = 1.8 --- VGS = 4.5V --- VGS = 0V --- pF VDS = 10V --- = 1.0MHz Avalanche Characteristics Symbol EA...9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switchin...
Description Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A??
Power MOSFET(Vdss=20V/ Rds(on)max=6.0mohm/ Id=110A)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?

File Size 243.87K  /  11 Page

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    U2102B-XFPG3Y U2102B-XFPY U2102B-XY U2102B-MY U2102B-MFPY U2102B-MFPG3Y

ATMEL Corporation
聚兴科技股份有限公司
Part No. U2102B-XFPG3Y U2102B-XFPY U2102B-XY U2102B-MY U2102B-MFPY U2102B-MFPG3Y
OCR Text ...rol GND Temp monitoring Reverse RG Rsh C1 IGBT 47 F/25 V Load 10 nF 2 Ramp Voltage limitation C3 820 k R3 Control 68 k Clock Synchronization...9 NTC 4767B-INDCO-10/05 U2102B 3. Power Supply, Synchronization Pins 15 and 16 The U2102B...
Description Multifunction Timer IC

File Size 261.37K  /  19 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FQI1N60 FQB1N60 FQB1N60TM
OCR Text ... 5) VDD = 300 V, ID = 1.2 A, RG = 25 (Note 4, 5) -------- 5 25 7 25 5 1 2.6 20 60 25 60 6 --- ns ns ns ns nC nC nC Drain...9 Notes : 1. VGS = 0 V 2. ID = 250 A 0.5 0.8 -100 -50 0 50 100 o 150 20...
Description 600V N-Channel QFET
600V N-Channel MOSFET

File Size 543.53K  /  9 Page

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    IRF3808L IRF3808S RF3808S

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF3808L IRF3808S RF3808S
OCR Text ...- VDD = 38V --- ID = 82A ns --- RG = 2.5 --- VGS = 10V T D Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact S...9.0 11.0 13.0 15.0 0.0 -60 -40 -20 0 20 40 60 80 V GS = 10V 100 120 140 160 180 TJ , Junc...
Description 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
AUTOMOTIVE MOSFET
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A?)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A)
Power MOSFET(Vdss=75V/ Rds(on)=0.007ohm/ Id=106A)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A 功率MOSFET(减振钢板基本\u003d 75V的,的Rdson)\u003d 0.007ohm,身份证\u003d 106A章?

File Size 159.77K  /  11 Page

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    IRF3808 IRF3808PBF

International Rectifier
Part No. IRF3808 IRF3808PBF
OCR Text ...- VDD = 38V --- ID = 82A ns --- RG = 2.5 --- VGS = 10V T D Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact S...9.0 11.0 13.0 15.0 0.0 -60 -40 -20 0 20 40 60 80 V GS = 10V 100 120 140 160 180 TJ , Junc...
Description 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?

File Size 129.31K  /  9 Page

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    SIHFB13N50A-E3 SIHFB13N50A

Vishay Siliconix
Part No. SIHFB13N50A-E3 SIHFB13N50A
OCR Text ...Starting TJ = 25 C, L = 5.7 mH, RG = 25 , IAS =14 A, dV/dt = 7.6 V/ns (see fig. 12a). c. ISD 14 A, dI/dt 250 A/s, VDD VDS, TJ 150 C. d. ...9 Pulse width 1 s Duty factor 0.1 % Fig. 10a - Switching Time Test Circuit 6 VDS 3 9...
Description Power MOSFET

File Size 153.71K  /  8 Page

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    IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR

International Rectifier, Corp.
Part No. IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR
OCR Text ...VDD = -28V --- ID = -38A ns --- RG = 2.5 --- RD = 0.72, See Fig. 10 Between lead, nH --- and center of die contact --- VGS = 0V --- pF VDS ...9 10 A 0.0 -60 -40 -20 0 20 40 60 80 VG S = -10 V 100 120 140 160 180 A -VG S , Ga...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条)
Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A)
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package

File Size 159.46K  /  10 Page

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    IRF4905 IRF4B905 IRF4905PBF

International Rectifier, Corp.
Part No. IRF4905 IRF4B905 IRF4905PBF
OCR Text ...DD = -28V --- I D = -38A ns --- RG = 2.5 --- RD = 0.72, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die...9 10 A 0.0 -60 -40 -20 0 20 40 60 80 VG S = -10 V 100 120 140 160 180 A -VG S , Ga...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条)
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 104.67K  /  8 Page

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    2N700207

Pan Jit International Inc.
Part No. 2N700207
OCR Text ...10V , RL=20 ID=500mA , VGEN=10V RG=10 V D S = 1 5 V , ID = 5 0 0 m A VDD=4.5V 0 .6 0 .1 0 .0 8 9 21 0 .7 15 ns 26 50 25 5 pF nC B V DSS V G S ( t h) R D S ( o n) R D S ( o n) ID S S IG S S g fS V G S = 0 V , ID = 1 0 u A V D S = V G S , ID ...
Description 60V N-Channel Enhancement Mode MOSFET

File Size 160.57K  /  5 Page

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    SI3879DV SI3879DV-T1-E3

Vishay Siliconix
Part No. SI3879DV SI3879DV-T1-E3
OCR Text ...) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf VDD = - 10 V, RL = 2.0 ID - 5.0 A, VGEN = - 4.5 V, Rg = 1 VD...9.7 4.5 1.0 1.0 7.5 6 54 19 8 26 80 20 10 10 85 30 15 40 120 30 15 ns 14.5 7 nC pF 0.070 0.105 - 0....
Description P-Channel 20-V (D-S) MOSFET with Schottky Diode

File Size 134.85K  /  10 Page

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