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  rf-dc Datasheet PDF File

For rf-dc Found Datasheets File :: 32737    Search Time::2.593ms    
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    AD9852 AD9852ASQ AD9852AST AD9852_PCB

AD[Analog Devices]
Part No. AD9852 AD9852ASQ AD9852AST AD9852_PCB
OCR Text ...quipment Commercial and Amateur RF Exciter GENERAL DESCRIPTION The AD9852 digital synthesizer is a highly integrated device that uses adv...dc offset sine wave centered at one-half the applied VDD or a 3 V TTL-level pulse input. 2 Change in...
Description CMOS 300 MHz Complete-DDS

File Size 424.37K  /  42 Page

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    AS173-73

Alpha Industries, Inc.
Alpha Industries Inc
Part No. AS173-73
OCR Text ...on Rise, Fall (10/90% or 90/10% RF) On, Off (50% CTL to 90/10% RF) Video Feedthru 0/+3 V 0/+5 V For Two-tone Input Power +17 dBm 0/+3 V 0/+5...DC = 300 kHz. 3. Insertion loss changes by 0.003 dB/C. Alpha Industries, Inc. [781] 935-5150 * Fa...
Description PHEMT GaAs IC High Linearity Positive Control SPDT Switch DC-2 GHz
PHEMT GaAs IC High Linearity Positive Control SPDT Switch DC? GHz

File Size 38.96K  /  2 Page

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    BA892-02L BA892-02V BA592 BA892

INFINEON[Infineon Technologies AG]
Part No. BA892-02L BA892-02V BA592 BA892
OCR Text RF Switching Diode For band switching in TV/VTR tuners and mobile applications small capacitance 1 Very low forward resistance (typ. ...DC Characteristics Reverse current VR = 20 V Forward voltage IF = 100 mA AC Characteristics Diode ca...
Description PIN Diodes - Bandswitching Diode for UHF-/VHF-Tuner
PIN Diodes - Silicon RF switching diode for VHF band switching in TV/VTR tuners

File Size 416.51K  /  4 Page

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    BA892V-02V BA892V-02V-GS08

Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
Part No. BA892V-02V BA892V-02V-GS08
OCR Text ... current the forward resistance rf can be switched far below 1 , so that the Switch is closed. To open the Switch, the BA892V02V has to be driven in the reverse mode where the BA892V-02V behaves like a small capacitor with high isolation. S...
Description Single Band Switching Diodes for band switching up to 3 GHz

File Size 45.83K  /  4 Page

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    BAS125-04W BAS125-05W BAS125-06W BAS125W

SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. BAS125-04W BAS125-05W BAS125-06W BAS125W
OCR Text ...ferential forward resistance RF IF = 5 mA, f = 10 kHz Semiconductor Group 2 Dec-20-1996 BAS 125W Forward current IF = f (TA*;TS) * Package mounted on epoxy BAS 125W 100 mA IF 80 70 60 50 40 30 20 10 0 0 20 40 60...
Description Preliminary data Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping application) 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE
Preliminary data Silicon Schottky Diodes (For low-loss fast-recovery meter protection bias isolation and clamping application)
From old datasheet system

File Size 106.14K  /  5 Page

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    BAS125-07 BAS125-07W BAS1257W Q62702-D1347

SIEMENS A G
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BAS125-07 BAS125-07W BAS1257W Q62702-D1347
OCR Text ...ristics Diode capacitance CT rf - 16 1.1 - pF VR = 0 V, f = 1 MHz Differential forward resistance I F = 5 mA, f = 10 kHz Semiconductor Group Semiconductor Group 22 Jun-04-1998 1998-11-01 BAS 125-07W For...
Description Silicon Schottky Diode (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications) 2 ELEMENT, SILICON, SIGNAL DIODE
Silicon Schottky Diode (For low-loss fast-recovery meter protection bias isolation and clamping applications)
From old datasheet system

File Size 31.81K  /  4 Page

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    BAS40-02L BAS40-04 BAS40-07W BAS140 BAS140W BAS4 BAS40 BAS40-05 BAS40-05W BAS40-06 BAS40-06W BAS40-07

Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. BAS40-02L BAS40-04 BAS40-07W BAS140 BAS140W BAS4 BAS40 BAS40-05 BAS40-05W BAS40-06 BAS40-06W BAS40-07
OCR Text ...ife time IF = 25 mA 1V F CT RF rr - 3 10 - 5 100 pF ps is the difference between lowest and highest VF in a multiple di...DC 10 2 5 BAS 140W EHD07166 tp tp D= T T 10 2 5 D= 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0...
Description Latest Silicon Discretes - Schottky Diode for switching applications
Silicon Schottky Diode 硅肖特基二极

File Size 504.16K  /  8 Page

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    BAS40-07W BAS4007W

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BAS40-07W BAS4007W
OCR Text ...ferential forward resistance rf I F = 10 mA, f = 10 kHz Semiconductor Group Semiconductor Group 22 Sep-09-1998 1998-11-01 BAS 40-07W Forward current IF = f V F) Reverse current IR = f (VR) T A = 25C TA = Parame...
Description Silicon Schottky Diode Preliminary data (General-purpose diode for high-speed switching Circuit protection Voltage clamping) 2 ELEMENT, SILICON, SIGNAL DIODE
From old datasheet system

File Size 111.29K  /  4 Page

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    BAS40-T1 BAS40 Q62702A1176 BAS40-04Q62702-D980

Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Analog Devices, Inc.
Part No. BAS40-T1 BAS40 Q62702A1176 BAS40-04Q62702-D980
OCR Text ...ee our WWW-Pages: Discrete and RF-Semiconductors (Small Signal Semiconductors) www.siemens.de/semiconductor/products/35/35.htm HiRel Discrete and Microwave Semiconductors www.siemens.de/semiconductor/products/35/353.htm Please contact als...
Description DIODE SCHOTTKY SOT-23
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor General-purpose diodes for high-speed switching Circuit protection) 伊雷尔硅肖特基二极管(伊雷尔和微波半导体分立一般用于高速开关电路保护的目的,二极管

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    BAS40- Q62702-D339 BAS40 BAS40-04 BAS40-05 Q62702-D980 BAS40-06 Q62702-D978 Q62702-D979

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BAS40- Q62702-D339 BAS40 BAS40-04 BAS40-05 Q62702-D980 BAS40-06 Q62702-D978 Q62702-D979
OCR Text ...0 kHz V(BR) IR - - VF - - - CT rf - - - 310 450 720 4 - 10 380 500 1000 5 100 - pF ps - - 1 10 mV 40 - - V A Values typ. max. Unit Semiconductor Group 3 BAS 40 ... Characteristics per Diode at Tj = 25 C, unless otherwis...
Description Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping) 2 ELEMENT, SILICON, SIGNAL DIODE
From old datasheet system

File Size 108.42K  /  5 Page

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