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PEREGRINE[Peregrine Semiconductor Corp.]
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| Part No. |
PE4283 4283-00 4283-01 4283-02 4283-51 4283-52
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| OCR Text |
...er RF Switch is manufactured on peregrine's UltraCMOSTM process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate, offering the performance of GaAs with the economy and integration of conventional CMOS. ... |
| Description |
SPDT High Power UltraCMOS?/a> DC - 4.0 GHz RF Switch
SPDT High Power UltraCMOSDC - 4.0 GHz RF Switch
SPDT High Power UltraCMOS⑩ DC - 4.0 GHz RF Switch
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| File Size |
225.34K /
11 Page |
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PEREGRINE[Peregrine Semiconductor Corp.]
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| Part No. |
PE83336EK 83336-00 83336-21 83336-22 PE83336
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| OCR Text |
peregrine's PE83336 is a high performance integer-N PLL capable of frequency synthesis up to 3.0 GHz. The superior phase noise performance of the PE83336 makes it ideal for rugged military environments including: radio handsets, radar, avio... |
| Description |
3.0 GHz Integer-N PLL for Low Phase Noise Applications
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| File Size |
272.08K /
14 Page |
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it Online |
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PEREGRINE[Peregrine Semiconductor Corp.]
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| Part No. |
PE83501-EK 83501-00 83501-11 83501-12 PE83501
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| OCR Text |
... The PE83501 is manufactured in peregrine's patented Ultra-Thin Silicon (UTSi ) CMOS process, offering the performance of GaAs with the economy and integration of conventional CMOS.
3.5 GHz Low Power CMOS Divide-by-2 Prescaler
Features... |
| Description |
3.5 GHz Low Power CMOS Divide-by-2 Prescaler
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| File Size |
264.14K /
7 Page |
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it Online |
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PEREGRINE[Peregrine Semiconductor Corp.]
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| Part No. |
PE83501_06 83501-00 83501-11 83501-12 PE83501 PE8350106
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| OCR Text |
... The PE83501 is manufactured on peregrine's UltraCMOSTM process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate, offering the performance of GaAs with the economy and integration of conventional CMOS. ... |
| Description |
3.5 GHz Low Power UltraCMOS Divide-by-2 Prescaler Military Operating Temperature Range
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| File Size |
194.03K /
8 Page |
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it Online |
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Peregrine Semiconductor...
PEREGRINE[Peregrine Semiconductor Corp.]
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| Part No. |
PE83502-EK 83502 83502-00 83502-21 83502-22 PE83502
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| OCR Text |
... The PE83502 is manufactured in peregrine's patented Ultra Thin Silicon (UTSi) CMOS process, offering the performance of GaAs with the economy and integration of conventional CMOS.
3.5 GHz Low Power CMOS Divide-by-4 Prescaler
Features *... |
| Description |
3.5 GHz Low Power CMOS Divide-by-4 Prescaler
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| File Size |
242.09K /
7 Page |
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it Online |
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Peregrine Semiconductor...
PEREGRINE[Peregrine Semiconductor Corp.]
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| Part No. |
PE83502_06 83502-00 83502-21 83502-22 PE8350206
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| OCR Text |
... The PE83502 is manufactured on peregrine's UltraCMOSTM process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate, offering the performance of GaAs with the economy and integration of conventional CMOS. ... |
| Description |
3.5 GHz Low Power UltraCMOS Divide-by-4 Prescaler Military Operating Temperature Range
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| File Size |
242.48K /
8 Page |
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it Online |
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Peregrine Semiconductor...
PEREGRINE[Peregrine Semiconductor Corp.]
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| Part No. |
PE83503-EK 83503 83503-00 83503-21 83503-22 PE83503
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| OCR Text |
... The PE83503 is manufactured in peregrine's patented Ultra Thin Silicon (UTSi ) CMOS process, offering the performance of GaAs with the economy and integration of conventional CMOS.
RR 3.5 GHz Low Power CMOS Divide-by-8 Prescaler
Featu... |
| Description |
3.5 GHz Low Power CMOS Divide-by-8 Prescaler
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| File Size |
240.93K /
7 Page |
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it Online |
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Peregrine Semiconductor...
PEREGRINE[Peregrine Semiconductor Corp.]
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| Part No. |
PE83503_06 83503-00 83503-21 83503-22 PE83503 PE8350306
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| OCR Text |
... The PE83503 is manufactured on peregrine's UltraCMOSTM process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate, offering the performance of GaAs with the economy and integration of conventional CMOS. ... |
| Description |
3.5 GHz Low Power UltraCMOS Divide-by-8 Prescaler Military Operating Temperature Range
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| File Size |
182.21K /
8 Page |
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it Online |
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PEREGRINE[Peregrine Semiconductor Corp.]
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| Part No. |
PE83511-EK 83511-00 83511-01 83511-02 PE83511
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| OCR Text |
... The PE83511 is manufactured in peregrine's patented Ultra-Thin Silicon (UTSi) CMOS process, offering the performance of GaAs with the economy and integration of conventional CMOS.
DC - 1500MHz Low Power CMOS Divide-by-2 Prescaler
Featu... |
| Description |
DC - 1500MHz Low Power CMOS Divide-by-2 Prescaler
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| File Size |
273.24K /
6 Page |
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it Online |
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PEREGRINE[Peregrine Semiconductor Corp.]
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| Part No. |
PE83511_06 83511-00 83511-01 83511-02 PE83511 PE8351106
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| OCR Text |
... The PE83511 is manufactured on peregrine's UltraCMOSTM process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate, offering the performance of GaAs with the economy and integration of conventional CMOS. ... |
| Description |
DC - 1500 MHz Low Power UltraCMOS Divide-by-2 Prescaler Military Operating Temperature Range
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| File Size |
259.12K /
7 Page |
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it Online |
Download Datasheet |
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