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    EM636165TS/VE-7 EM636165TS/VE-7L EM636165TS/VE-6 EM636165TS/VE-55 EM636165TS/VE-10 EM636165TS/BE-8G EM636165TS/BE-7LG EM

Etron Technology, Inc.
Part No. EM636165TS/VE-7 EM636165TS/VE-7L EM636165TS/VE-6 EM636165TS/VE-55 EM636165TS/VE-10 EM636165TS/BE-8G EM636165TS/BE-7LG EM636165TS/BE-7G EM636165TS/BE-6G EM636165TS/BE-5G EM636165TS/BE-55G EM636165TS/BE-10G EM636165TS/VE-8
OCR Text ...rst Length: 1, 2, 4, 8, or full page - burst Type: interleaved or linear burst - burst stop function * Individual byte controlled by LDQM and UDQM * Auto Refresh and Self Refresh * 4096 refresh cycles/64ms * CKE power down mode * JEDEC stan...
Description 1Mega x 16 Synchronous DRAM (SDRAM)

File Size 796.76K  /  75 Page

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    Motorola
Part No. MC9328MX1DVM20R2 MC9328MX1VM20R2 MC9328MX1CVM15R2 MC9328MX1CVH15R2
OCR Text ...rid array (mapbga). figure 1 on page 1 shows the functional block diagram of the mc9328mx1. figure 1. mc9328mx1 functional block diagram ...burst sequence and initiate a new (long first access) burst sequence. lba active low signal sent by...
Description i.MX microprocessor, 200 MHz
i.MX microprocessor, 150 MHz

File Size 985.72K  /  94 Page

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    EM48AM3244VTA-7FE EM48AM3244VTA-75FE EM48AM3244VTA-6FE EM488M3244VTA-6FE EM481M3244VTA-6FE EM482M3244VTA-6FE EM484M3244V

Eorex Corporation
Part No. EM48AM3244VTA-7FE EM48AM3244VTA-75FE EM48AM3244VTA-6FE EM488M3244VTA-6FE EM481M3244VTA-6FE EM482M3244VTA-6FE EM484M3244VTA-6FE EM48BM3244VTA-6FE EM481M3244VTA-7FE EM482M3244VTA-7FE EM484M3244VTA-7FE EM488M3244VTA-7FE EM48BM3244VTA-7FE EM488M3244VTA-75FE EM484M3244VTA-75FE EM482M3244VTA-75FE EM481M3244VTA-75FE EM48BM3244VTA-75FE
OCR Text ...ngth (B/L) - 1, 2, 4, 8 or Full page * Programmable CAS Latency (C/L) - 2 or 3 * Data Mask (DQM) for Read / Write Masking * Programmable Wra...burst Read with Single-bit Write Operation * All Inputs are Sampled at the Rising Edge of the System...
Description 64Mb (512K×4Bank×32) Synchronous DRAM

File Size 280.38K  /  17 Page

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    W981208AH W981208A

Winbond
Part No. W981208AH W981208A
OCR Text ...t Length: 1, 2, 4, 8 , and full page burst read, Single Writes Mode Byte data controlled by DQM Power-Down Mode Auto-Precharge and controlled precharge 4k refresh cycles / 64ms Interface: LVTTL Package: TSOP II 54 pin, 400 mil - 0.80 Gen...
Description From old datasheet system
4M x 8 bit x 4 Banks SDRAM

File Size 2,167.58K  /  44 Page

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    W981208BH

WINBOND[Winbond]
Part No. W981208BH
OCR Text ...secutive memory location in one page can be accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE command. Column addresses are automatically generated by the SDRAM internal counter in burst oper...
Description From old datasheet system
4M x 4 BANKS x 8 BIT SDRAM

File Size 1,498.87K  /  41 Page

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    W981216BH W981216 W981216BH-75 W981216BH-75I W981216BH-75L W981216BH-6

Winbond Electronics Corp
WINBOND[Winbond]
Part No. W981216BH W981216 W981216BH-75 W981216BH-75I W981216BH-75L W981216BH-6
OCR Text ...secutive memory location in one page can be accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE command. Column addresses are automatically generated by the SDRAM internal counter in burst oper...
Description 2M x 4 Banks x 16 Bit SDRAM
Low Power SDRAM
Industrial SDRAM
2M x 4 BANKS x 16 BIT SDRAM
DRAM - Datasheet Reference

File Size 1,313.72K  /  41 Page

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    W981216 W981216AH W981216AH-8H W981216A

WINBOND[Winbond]
Part No. W981216 W981216AH W981216AH-8H W981216A
OCR Text ...t Length: 1, 2, 4, 8 , and full page burst read, Single Writes Mode Byte data controlled by UDQM and LDQM Power-Down Mode Auto-Precharge and controlled precharge 4k refresh cycles / 64ms Interface: LVTTL Package: TSOP II 54 pin, 400 mil - 0...
Description From old datasheet system
x16SDRAM
2M x 16 bit x 4 Banks SDRAM

File Size 2,163.19K  /  44 Page

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    W981616AH W981616AHB1

Winbond Electronics
Part No. W981616AH W981616AHB1
OCR Text ...secutive memory location in one page can be accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE command. Column addresses are automatically generated by the SDRAM internal counter in burst oper...
Description 512 x 2 Banks x 16 Bits SDRAM
512K x 2 BANKS x 16 BIT SDRAM
From old datasheet system

File Size 1,275.25K  /  40 Page

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    W981616BH

Winbond
Part No. W981616BH
OCR Text ...secutive memory location in one page can be accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE command. Column addresses are automatically generated by the SDRAM internal counter in burst oper...
Description 512K 2 BANKS 16 BITS SDRAM

File Size 1,012.86K  /  40 Page

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    Cypress Semiconductor Corp.
SRAM
Cypress Semiconductor, Corp.
Part No. CY7C1470V25 CY7C1470V25-167ACES CY7C1470V25-167AXC CY7C1470V25-167AXCES CY7C1470V25-167BZC CY7C1470V25-167BZCES CY7C1470V25-167BZXC CY7C1470V25-200ACES CY7C1470V25-200AXC CY7C1470V25-200AXCES CY7C1470V25-200BZC CY7C1470V25-200BZCES CY7C1470V25-200BZXC CY7C1470V25-250AXC CY7C1470V25-250BZC CY7C1470V25-250BZXC CY7C1472V25-250AXC CY7C1472V25-250BZXC CY7C1474V25-250BGXC CY7C1472V25-250BZC CY7C1474V25-250BGC CY7C1474V25-167BGCES CY7C1472V25-167BZCES CY7C1472V25-200ACES CY7C1472V25-200AXCES CY7C1472V25-200BZCES CY7C1472V25-167AXCES CY7C1474V25-200BGXC CY7C1474V25-200BGCES CY7C1472V25 CY7C1472V25-167AXC CY7C1472V25-167BZXC CY7C1472V25-200BZXC CY7C1474V25-200BGC
OCR Text ...Document #: 38-05290 Rev. *E page 2 of 27 PRELIMINARY Pin Configurations 100-pin TQFP Packages A A CE1 CE2 BWd BWc BWb BWa CE3 VDD...burst counter is advanced. When LOW, a new address can be loaded into the device for an access. Afte...
Description 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL?/a> Architecture
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture
ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80%
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 3.4 ns, PQFP100
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 3.4 ns, PBGA165
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 3 ns, PBGA165
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBLArchitecture 1M X 72 ZBT SRAM, 3 ns, PBGA209
ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80% 2M X 36 ZBT SRAM, 3.4 ns, PBGA165

File Size 382.31K  /  27 Page

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