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    IRF9520NL IRF9520NS

IRF[International Rectifier]
Part No. IRF9520NL IRF9520NS
OCR Text ...e applications. D 2 Pak T o -26 2 Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TA = 25C PD @TC = 25C V...j = 150C 100 VGS = 20V nA -100 VGS = -20V 27 ID = -4.0A 5.0 nC VDS = -80V 15 VGS = -10V, See Fig. 6 ...
Description Power MoSFET(Vdss=-100V/ Rds(on)=0.48ohm/ Id=-6.8A)
Power MoSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)
Power MoSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A)

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    IRF9520N

IRF[International Rectifier]
Part No. IRF9520N
OCR Text ...T S 1 - GATE 2 - D R A IN 3 - S o U RC E 4 - D R A IN 1 4.09 (.55 5) 1 3.47 (.53 0) 4.06 (.16 0) 3.55 (.14 0) 3X 3X 1 .4 0 (.0 55 ) 1 .1 5 (.0 45 ) 0.93 (.03 7) 0.69 (.02 7) M BAM 3X 0.55 (.02 2) 0.46 (.01 8) 0 .3 6 (.0...
Description Power MoSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A)
Power MoSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)

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    IRF9530NL IRF9530NS IRF9530NSTRR

IRF[International Rectifier]
Part No. IRF9530NL IRF9530NS IRF9530NSTRR
OCR Text ... applications. D 2 P ak T o -26 2 Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TA = 25C PD @TC = 25C V...j = 2 5 C 10 Tj = 1 7 5 C 1.5 1.0 1 0.5 0.1 4 5 6 7 V DS = -5 0 V 2 0 s P U L ...
Description Power MoSFET(Vdss=-100V/ Rds(on)=0.20ohm/ Id=-14A)
Power MoSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)

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    IRF9530N

IRF[International Rectifier]
Part No. IRF9530N
OCR Text ...tage (V) V GS C iss C rs s C o ss = = = = 0V , f = 1MHz C g s + C g d , C d s S H o R TE D C gd C ds + C g d 20 ID = -8.4A ...j = 15 0C 10 -ID , Drain Current (A) I 100 10us T j = 25 C 100us 10 1ms 1 0.1 0.4...
Description Power MoSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)

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    IRF9540NL IRF9540NS IRF9540NSTRL

IRF[International Rectifier]
Part No. IRF9540NL IRF9540NS IRF9540NSTRL
OCR Text ... applications. D 2 P ak T o -26 2 Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TA = 25C PD @TC = 25C V...j , junction T em perature (C ) Fig 3. Typical Transfer Characteristics Fig 4. Normalized on-R...
Description Power MoSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A)
Power MoSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)

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    IRF9540N IRF9540 IRF9540NPBF

IRF[International Rectifier]
Part No. IRF9540N IRF9540 IRF9540NPBF
OCR Text ... R D S (on) , Drain-to-S ource o n Resistance (N orm alized) I D = -19 A -I D , D rain-to -So urc e C urre nt (A ) 2.0 1.5 1...j , junction T em perature (C ) Fig 3. Typical Transfer Characteristics Fig 4. Normalized on-R...
Description -100V Single P-Channel HEXFET Power MoSFET in a To-220AB package
Power MoSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)
Power MoSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A)

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    IRF9952

IRF[International Rectifier]
Part No. IRF9952
OCR Text ... G1 S2 G2 N -C H A N N E L M o S F E T 1 8 N-Ch P-Ch VDSS 30V -30V 2 7 3 6 4 5 P -C H A N N E L M o S F E T RD...j = 25C, IS = 1.25A, VGS = 0V V -- -0.82 -1.2 Tj = 25C, IS = -1.25A, V GS = 0V -- 27 53 N-Channel ...
Description Power MoSFET(Vdss= -30V)

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    IRF9953

IRF[International Rectifier]
Part No. IRF9953
OCR Text ...maller equivalent: IRF7506 S o -8 Absolute Maximum Ratings ( TA = 25C Unless otherwise Noted) Symbol Drain-Source Voltage Gate-Sourc...j = 1 5 0 C 1 T j = 1 50 C T j = 25 C 1 0.1 3.0 4.0 5.0 V DS = -1 0 V 2 0 s P U L S E W ...
Description Power MoSFET(Vdss=-30V, Rds(on)=0.25ohm)

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    IRF9956

IRF[International Rectifier]
Part No. IRF9956
OCR Text ... 4 5 RDS(on) = 0.10 T o p V iew Recommended upgrade: IRF7303 or IRF7313 Lower profile/smaller equivalent: IRF7503 Description ...j = 2 5 C T j = 1 5 0 C T j = 1 50C T j = 25C 1 1 3.0 3.5 4.0 4.5 VD S = 1 0 V 2 0 s PU L...
Description Power MoSFET(Vdss=30V, Rds(on)=0.10ohm)

File Size 98.88K  /  7 Page

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    IRF9Z24NL IRF9Z24NS IRF9Z24NSTRR IRF9Z24NSTRL

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF9Z24NL IRF9Z24NS IRF9Z24NSTRR IRF9Z24NSTRL
OCR Text ... applications. D 2 P ak T o -26 2 Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TA = 25C PD @TC = 25C V...j = 150C 100 VGS = 20V nA -100 VGS = -20V 19 ID = -7.2A 5.1 nC VDS = -44V 10 VGS = -10V, See Fig. 6 ...
Description -60V Single P-Channel HEXFET Power MoSFET in a To-262 package
-55V Single P-Channel HEXFET Power MoSFET in a D2-Pak package
Power MoSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A) 功率MoSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.175ohm,身份证\u003d- 12A条)
Power MoSFET(Vdss=-55V/ Rds(on)=0.175ohm/ Id=-12A)

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