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FUJI[Fuji Electric]
FUJI ELECTRIC HOLDINGS CO., LTD.
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| Part No. |
2SK2254-01S 2SK2254-01L
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| OCR Text |
...ee Avalanche Proof
N-channel MOS-FET
250V
0,18
18A
80W
> Outline Drawing
> Applications
Switching Regulators UPS DC-DC c...1,0 100 0,18 2650 440 100 45 75 120 110 18 72 1,5
7
18
1,0 150 1
Unit V V A mA nA S pF ... |
| Description |
N-channel MOS-FET
POT 10K OHM 9MM HORZ NO BUSHING
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| File Size |
206.67K /
2 Page |
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it Online |
Download Datasheet
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FUJI[Fuji Electric]
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| Part No. |
2SK2256-01
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| OCR Text |
...ee Avalanche Proof
N-channel MOS-FET
250V
0,18
18A
80W
> Outline Drawing
> Applications
Switching Regulators UPS DC-DC c...1,0 100 0,18 2650 440 100 45 75 120 110 18 72 1,5
7,0
18
IF=2xIDR VGS=0V Tch=25C IF=IDR VGS... |
| Description |
N-channel MOS-FET
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| File Size |
188.05K /
2 Page |
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it Online |
Download Datasheet |
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SUTEX[Supertex, Inc]
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| Part No. |
TP2424ND TP2424 TP2424N8
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| OCR Text |
...erature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally...1.6 mm from case for 10 seconds. BVDSS BVDGS 20V -55C to +150C 300C
D G D S
TO-243AA (SOT-89)... |
| Description |
P-Channel Enhancement-Mode Vertical DMOS FETs
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| File Size |
430.27K /
2 Page |
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it Online |
Download Datasheet |
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MICREL INC
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| Part No. |
MIC4608BM
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| OCR Text |
...on- structed with complementary mos outputs, where the drains of the final output totem poles have been left disconnected so individual conn...1 w typ. ? high speed t r , t f .................................. <30ns with 10,000pf ? short dela... |
| Description |
9 A BUF OR INV BASED MOSFET DRIVER, PDSO8
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| File Size |
29.11K /
4 Page |
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it Online |
Download Datasheet |
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Supertex Inc
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| Part No. |
TP2424N8
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| OCR Text |
...erature coefficient inherent in mos devices. characteristic of all mos structures, these devices are free from thermal runaway and thermally...1.6 mm from case for 10 seconds. low threshold ordering information order number / package bv dss ... |
| Description |
P-Channel Enhancement-Mode Vertical DMOS FETs
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| File Size |
432.55K /
2 Page |
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it Online |
Download Datasheet |
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Elan Microelectronics, Corp.
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| Part No. |
TP2424
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| OCR Text |
...erature coefficient inherent in mos devices. characteristic of all mos structures, these devices are free from thermal runaway and thermally...1.6 mm from case for 10 seconds. to-243aa (sot-89) g d s d low threshold
2 tp2424 1235 bordeaux ... |
| Description |
P-Channel Enhancement-Mode Vertical DMOS FET(击穿电压-240V，低门限2.4V，P沟道增强型垂直DMOS结构场效应管) P通道增强模式垂直的DMOS场效应管（击穿电压，240伏，低门限为2.4V，P沟道增强型垂直的DMOS结构场效应管
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| File Size |
19.07K /
2 Page |
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it Online |
Download Datasheet |
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