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mje Datasheet PDF File

For mje Found Datasheets File :: 507 Search Time::1.125ms
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				Infineon Technologies A... INFINEON[Infineon Technologies AG]
Part No.	BFP640F
OCR Text	...F = ISE = NR = ISC = IRB = RC = mje = VTF = CJC = XCJC = VJS = EG = TNOM 1.025 21 1 400 1.522 3.061 0.3 1.5 67.43 1 0.6 1.078 298 fA fA mA V fF V eV K All parameters are ready to use, no scalling is necessary. Package Equivalen...
Description	NPN Silicon Germanium RF Transistor
File Size	188.44K / 6 Page	View it Online	Download Datasheet

				Infineon Technologies A... INFINEON[Infineon Technologies AG]
Part No.	BFP640
OCR Text	...F = ISE = NR = ISC = IRB = RC = mje = VTF = CJC = XCJC = VJS = EG = TNOM 1.025 21 1 400 1.522 3.061 0.3 1.5 67.43 1 0.6 1.078 298 fA fA mA V fF V eV K All parameters are ready to use, no scalling is necessary. Extracted on behalf ...
Description	NPN Silicon Germanium RF Transistor
File Size	270.21K / 8 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	BFR340F
OCR Text	...F = ISE = NR = ISC = IRB = RC = mje = VTF = CJC = XCJC = VJS = EG = TNOM 0.4213 11.768 0.3253 3.632 0.01 5.2493 0.4172 0.262 222.63 0.3904 0.75 1.11 300 nA nA mA V fF V eV K deg fF - All parameters are ready to use, no scalling is nec...
Description	RF-Bipolar - NPN Silicon RF transistor in TSFP-3 package ideal for Low Noise Amplifiers and Oscillators
File Size	150.45K / 8 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	BFR340L3
OCR Text	...F = ISE = NR = ISC = IRB = RC = mje = VTF = CJC = XCJC = VJS = EG = TNOM 0.4213 11.768 0.3253 3.632 0.01 5.2493 0.4172 0.262 222.63 0.3904 0.75 1.11 300 nA nA mA
Description	RF-Bipolar - NPN Silicon RF transistor in TSLP-3 package ideal for Low Noise Amplifiers and VCO Modules
File Size	101.32K / 4 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	BFR340T
OCR Text	...F = ISE = NR = ISC = IRB = RC = mje = VTF = CJC = XCJC = VJS = EG = TNOM 0.4213 11.768 0.3253 3.632 0.01 5.2493 0.4172 0.262 222.63 0.3904 0.75 1.11 300 nA nA mA V fF V eV K deg fF - All parameters are ready to use, no scalling is nec...
Description	RF-Bipolar - NPN Silicon RF transistor in SC75 package ideal for Low Noise Amplifiers and Oscillators
File Size	101.18K / 4 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	MMBT3904 2N3904 PZT3904 2N3904BU 2N3904J25Z PZT3904NL 2N3904CTA 2N3904CBU 2N3904D81Z 2N3904J61Z 2N3904D10Z 2N3904D28Z
OCR Text	...=.3085 Vjc=.75 Fc=.5 Cje=4.493p mje=.2593 Vje=.75 Tr=239.5n Tf=301.2p Itf=.4 Vtf=4 Xtf=2 Rb=10) 2N3904 / MMBT3904 / PZT3904 NPN General Purpose Amplifier (continued) Typical Characteristics 500 400 125 C V CE = 5V VCESAT...
Description	NPN General Purpose Amplifier
File Size	101.88K / 7 Page	View it Online	Download Datasheet

				Philips
Part No.	BFG11X BFG11 BFG11/T1 BFG11/X
OCR Text	...RB RBM RE RC XTB EG XTI CJE VJE mje TF XTF VTF ITF PTF CJC VJC MJC XCJC TR CJS VALUE 3.338 97.14 0.988 31.40 51.45 23.53 2.386 13.73 0.989 2.448 100.0 54.10 1.224 1.740 1.000 1.740 59.65 0.124 0.000 1.110 3.000 9.555 0.600 0.315 12.96 400.0...
Description	NPN 2 GHz RF power transistor TRANSISTOR NPN HF
File Size	58.37K / 12 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group]
Part No.	BFR181 Q62702-F1314
OCR Text	...F = ISE = NR = ISC = IRB = RC = mje = VTF = CJC = XCJC = VJS = EG = TNOM 0.90617 12.603 0.87757 0.01195 0.69278 2.2171 0.43619 0.12571 319.69 0.75 1.11 300 fA fA mA V fF V eV K 0.082903 - All parameters are ready to use, no sca...
Description	From old datasheet system NPN Silicon RF Transistor (For low noise high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA) NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)
File Size	57.16K / 7 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor] MOTOROLA[Motorola, Inc]
Part No.	mje18008 MJF18008 ON2023
OCR Text	... Power Supply Applications The mje/MJF18008 have an applications specific state-of-the-art die designed for use in 220 V line-operated Switchmode Power supplies and electronic light ballasts. These high voltage/high speed transistors offer...
Description	POWER TRANSISTOR 8.0 AMPERES 1000 VOLTS 45 and 125 WATTS Switching Power Supply Applications From old datasheet system
File Size	421.29K / 10 Page	View it Online	Download Datasheet

For mje Found Datasheets File :: 507 Search Time::1.125ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | <10> | 11 | 12 | 13 | 14 | 15 |