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				WINBOND[Winbond]
Part No.	W91460N W91462N W91466N W91460NSERIES
OCR Text	...5 0.2 170 3 -23 3.0 - UNIT V ma A A mVrms dB dB V ma ma ma -8- W91460N SERIES DC Characteristics, continued PARAMETER Keypad In...mb 4 2 mb 2 TKID TIDP TPDP TIDP TPDP TIDP DTMF Low OSC. OSCILLATION ...
Description	From old datasheet system 3-memory tone/pulse dialer with handfree and hold functions 3-MEMORY TONE/PULSE DIALER WITH SAVE FUNCTION
File Size	165.00K / 15 Page	View it Online	Download Datasheet

				Philips Semiconductors
Part No.	BLV103
OCR Text	...CONDITIONS open emitter; IC = 4 ma open base; IC = 30 ma open collector; IE = 2 ma VBE = 0; VCE = 30 V VCE = 25 V; IC = 300 ma VCB = 25 V; I...mb-h = 0.4 K/W. MODE OF OPERATION c.w. class-AB 960 960 f (MHz) 24 26 VCE (V) 5 5 ICQ (ma) 4 4 PL (W...
Description	UHF power transistor
File Size	89.32K / 10 Page	View it Online	Download Datasheet

				Philips Semiconductors
Part No.	BLV193
OCR Text	...ONDITIONS open emitter; Ic = 20 ma open base; Ic = 40 ma open collector; IE = 0.5 ma VCE = 16 V; VBE = 0 VCE = 10 V; Ic = 1.2 A; note 1 VCB ...mb Note collector-mounting base capacitance - 2 - pF 1. Measured under pulse condi...
Description	UHF power transistor
File Size	107.99K / 14 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	BT258U-800R BT258U-600R BT258U BT258U-500R
OCR Text	...s t = 10 ms ITM = 10 A; IG = 50 ma; dIG/dt = 50 ma/s -40 maX. -500R -600R -800R 5001 6001 800 5 8 75 82 28 50 2 5 5 5 0.5 150 1252 UNIT V A ...mb Rth j-a PARAMETER CONDITIONS MIN. - BT258U series TYP. 70 maX. 2.0 - UNIT K/W K/W ...
Description	Thyristors logic level 8 A, 800 V, SCR, TO-251
File Size	50.55K / 6 Page	View it Online	Download Datasheet

				http:// PHILIPS[Philips Semiconductors]
Part No.	BUK220-50Y BUK220-50Y_1
OCR Text	... 32 V V - k 5 50 ma ma 75 mJ ESD LIMITING VALUE SYmbOL VC PARAMETER Electrostatic discharge capacitor voltage CONDI...mb Junction to mounting base 2.5 3 K/W CONDITIONS MIN. TYP. maX. UNIT 1 For normal continuous ope...
Description	From old datasheet system TOPFET high side switch SMD version of BUK219-50Y
File Size	38.65K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BUK221-50DY
OCR Text	... -5 -50 -5 -50 +5 +50 +5 +50 60 ma ma ma ma mJ Status current Inductive load clamping Electrostatic discharge voltage Vesd 2 kV ...mb) Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to mounting base the...
Description	Dual channel high-side TOPFET
File Size	90.52K / 16 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BUK7213-40A
OCR Text	...wn voltage Conditions ID = 0.25 ma; VGS = 0 V Tj = 25 C Tj = -55 C VGS(th) gate-source threshold voltage ID = 1 ma; VDS = VGS; Figure 9 Tj = 25 C Tj = 175 C Tj = -55 C IDSS drain-source leakage current VDS = 40 V; VGS = 0 V Tj = 25 C Tj = 1...
Description	TrenchMOS standard level FET TrenchMOS?? standard level FET Trenchmos (tm) standard level FET
File Size	103.12K / 14 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BUK7227-100B
OCR Text	...wn voltage Conditions ID = 0.25 ma; VGS = 0 V Tj = 25 C Tj = -55 C VGS(th) gate-source threshold voltage ID = 1 ma; VDS = VGS; Figure 9 Tj = 25 C Tj = 185 C Tj = -55 C IDSS drain-source leakage current VDS = 100 V; VGS = 0 V Tj = 25 C Tj = ...
Description	TrenchMOS standard level FET
File Size	86.14K / 12 Page	View it Online	Download Datasheet

For ma mb Found Datasheets File :: 7611 Search Time::2.422ms
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