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IXYS[IXYS Corporation]
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| Part No. |
IXFX38N80Q2 IXFK38N80Q2 IXFN38N80Q2
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| OCR Text |
...= Drain TAB = Drain
0.9/8 Nm/lb.in. 1.5/13 Nm/ib.in. 22...130/5...30 g 10 30 N/lb g g
Features Double metal process for low gate resis...91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.... |
| Description |
Discrete MOSFETs: HiPerFET Power MOSFETS N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Q Low intrinsic R
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| File Size |
601.28K /
5 Page |
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it Online |
Download Datasheet
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IXYS CORP
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| Part No. |
GX60N60C2D1
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| OCR Text |
... 1.13/10 nm/lb.in. weight to-264 10 g plus247 6 g maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from ...91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 ... |
| Description |
Fast SRAM > Late Write Synchronous SRAM; Organization (word): 512K; Organization (bit): x 36; Memory capacity (bit): 16M; Supply voltage (V): 150; Operating temperature (°C): 1.5; Package: BGA (119)
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| File Size |
615.83K /
5 Page |
View
it Online |
Download Datasheet
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IXYS[IXYS Corporation] http://
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| Part No. |
98984 IXFX60N55Q2 IXFK60N55Q2
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| OCR Text |
...= Drain TAB = Drain
0.9/6 Nm/lb.in. 6 10 g g
G = Gate S = Source
Features Double metal process for low gate resistance Internationa...91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.... |
| Description |
HiPerFET Power MOSFETs Q-Class
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| File Size |
90.25K /
2 Page |
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it Online |
Download Datasheet
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Price and Availability
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