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TY Semiconductor Co., Ltd
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| Part No. |
AOTF10T60P
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| OCR Text |
...g vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr 7 of 7 4008-318-12... |
| Description |
Trench Power AlphaMOS-II technology
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| File Size |
966.74K /
7 Page |
View
it Online |
Download Datasheet
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TY Semiconductor Co., Ltd
|
| Part No. |
AOT10T60P
|
| OCR Text |
...g vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr 7 of 7 ... |
| Description |
Trench Power AlphaMOS-II technology
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| File Size |
1,237.39K /
7 Page |
View
it Online |
Download Datasheet
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Alpha & Omega Semiconductor...
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| Part No. |
AO4886
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| OCR Text |
...g vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr rev 0: sep 2010 www.aosmd.com page 6 of 6
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| Description |
100V Dual N-Channel MOSFET
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| File Size |
547.76K /
6 Page |
View
it Online |
Download Datasheet
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
IRFWI530A
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| OCR Text |
... Starting T J =25 oCo 3 _ _ _ O ISD < 14A, di/dt < 350A/ s, VDD< BVDSS , Starting T J =25 C _ s, 4 O Pulse Test : Pulse Width = 250 Duty Cy...74
o C/W
Max.
2. Duty Factor, D=t /t2 1 3. TJ M -TC =PD M *Z J C (t)
Z (t) ,
PDM t1... |
| Description |
Advanced Power MOSFET
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| File Size |
257.86K /
7 Page |
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it Online |
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DnI
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| Part No. |
DFF30N06
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| OCR Text |
...= 0 ? , starting t j = 25c 3. isd 30a, di/dt 300a/us, v dd bv dss , starting t j = 25c 4. pulse test : pulse width 300us,...74 4.90 3.73 16.07 3.40 13.28 9.59 6.88 max 2.54 4.70 3.33 15.87 3.30 13.08 9.39 6.68... |
| Description |
N-Channel MOSFET
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| File Size |
798.28K /
7 Page |
View
it Online |
Download Datasheet
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Price and Availability
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