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  isd-74 Datasheet PDF File

For isd-74 Found Datasheets File :: 804    Search Time::2.14ms    
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    TY Semiconductor Co., Ltd
Part No. AOTF10T60P
OCR Text ...g vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr 7 of 7 4008-318-12...
Description Trench Power AlphaMOS-II technology

File Size 966.74K  /  7 Page

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    TY Semiconductor Co., Ltd
Part No. AOT10T60P
OCR Text ...g vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr 7 of 7 ...
Description Trench Power AlphaMOS-II technology

File Size 1,237.39K  /  7 Page

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    Alpha & Omega Semiconductor...
Part No. AO4886
OCR Text ...g vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr rev 0: sep 2010 www.aosmd.com page 6 of 6
Description 100V Dual N-Channel MOSFET

File Size 547.76K  /  6 Page

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    AOD4130 AOI4130

Alpha & Omega Semiconductors
Part No. AOD4130 AOI4130
OCR Text ...g vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr rev 1: june 2011 www.aosmd.com page 6 of 6
Description 60V N-Channel MOSFET

File Size 301.63K  /  6 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. IRFWI530A
OCR Text ... Starting T J =25 oCo 3 _ _ _ O ISD < 14A, di/dt < 350A/ s, VDD< BVDSS , Starting T J =25 C _ s, 4 O Pulse Test : Pulse Width = 250 Duty Cy...74 o C/W Max. 2. Duty Factor, D=t /t2 1 3. TJ M -TC =PD M *Z J C (t) Z (t) , PDM t1...
Description Advanced Power MOSFET

File Size 257.86K  /  7 Page

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    IRF7704PBF

International Rectifier
Part No. IRF7704PBF
OCR Text ...IS AREA LIMITED BY R DS(on) -ISD , Reverse Drain Current (A) 10 -I D, Drain-to-Source Current (A) 10 100sec TJ = 150 C 1msec 1 10msec Tc = 25C Tj = 150C Single Pulse 0.1 1 10 100 1000 1 TJ = 25 C 0.1 0.4 V GS...
Description HEXFET Power MOSFET

File Size 196.60K  /  9 Page

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    DnI
Part No. DFF30N06
OCR Text ...= 0 ? , starting t j = 25c 3. isd 30a, di/dt 300a/us, v dd bv dss , starting t j = 25c 4. pulse test : pulse width 300us,...74 4.90 3.73 16.07 3.40 13.28 9.59 6.88 max 2.54 4.70 3.33 15.87 3.30 13.08 9.39 6.68...
Description N-Channel MOSFET

File Size 798.28K  /  7 Page

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    IRF7704

International Rectifier
Part No. IRF7704
OCR Text ...S AREA LIMITED BY R DS (on) -ISD , Reverse Drain Current (A) 10 -ID , Drain-to-Source Current (A) 10 100sec TJ = 150 C 1msec 1 10msec Tc = 25C Tj = 150C Single Pulse 0.1 1 10 100 1000 1 TJ = 25 C 0.1 0.4 V GS...
Description Power MOSFET(Vdss=-40V)

File Size 151.02K  /  8 Page

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    FQP10N60CF FQPF10N60CF

FAIRCHILD SEMICONDUCTOR CORP
Part No. FQP10N60CF FQPF10N60CF
OCR Text ... RG = 25 , Starting TJ = 25C 3. ISD 9.0A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5....74 C/W (t) 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * Z? JC (t) 10 -5 10 -4 10 -3...
Description 600V N-Channel MOSFET

File Size 926.36K  /  10 Page

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