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  id-55a Datasheet PDF File

For id-55a Found Datasheets File :: 285    Search Time::1.281ms    
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    STK55X40LM

AUK corp
Part No. STK55X40LM
OCR Text ... (Ta=25C) Symbol VDSS VGSS ID IDP PD IAS EAS IAR EAR TJ Tstg Rating 400 30 0.55 2.4 1.3 0.6 4.1 0.6 0.1 150 -55~150 Unit V ...55A, RG=25 - - ns VDD=200V, VGS=10V ID=0.55A - - nC Source-Drain Dio...
Description Advanced Power MOSFET

File Size 359.84K  /  8 Page

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    INTERSIL[Intersil Corporation]
Part No. FSJ9055R4 FSJ9055D FSJ9055D1 FSJ9055D3 FSJ9055R FSJ9055R1 FSJ9055R3
OCR Text .... . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...55A ID = 55A, VDS = -15V VDS = -25V, VGS = 0V, f = 1MHz TYP 0.020 130 36 42 -6 6300 2250 300 MAX -7....
Description 55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs

File Size 65.59K  /  8 Page

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    BUK7606-55 BUK7606-55A

Philips Semiconductors
3M Company
Part No. BUK7606-55 BUK7606-55A
OCR Text ...lised continuous drain current. id% = 100 i d /i d 25 ?c = f(t mb ); conditions: v gs 3 5 v fig.3. safe operating area. t mb = 25 ?c...55a standard level fet fig.7. typical on-state resistance, t j = 25 ?c . r ds(on) = f(v gs ); ...
Description TrenchMOS(TM)transistor Standard level FET(TrenchMOS(TM)晶体管标准电平FET)
Aluminum Snap-In Capacitor; Capacitance: 2200uF; Voltage: 50V; Case Size: 22x25 mm; Packaging: Bulk
TrenchMOSTM)transistor Standard level FET(TrenchMOSTM)晶体管标准电平FET) TrenchMOS(商标)一级标准场效应晶体管(TrenchMOS(商标)晶体管标准电平场效应管)

File Size 70.00K  /  7 Page

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    IXFB110N60P3

IXYS Corporation
Part No. IXFB110N60P3
OCR Text ...th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS = 30V, VDS = 0V VDS = VDSS, VGS = 0V TJ = 125C Characteristic Values Min...55A, Note 1 Characteristic Values Min. Typ. Max. 65 105 18 1650 5.5 1.0 63 19 77 11 245 83 53 S nF p...
Description Polar3 HiPerFET Power MOSFET

File Size 137.57K  /  5 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FQP55N06
OCR Text ...te Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25C unless otherwise noted Parameter Drain-Source Vo...55A, VDD = 25V, RG = 25 , Starting TJ = 25C 3. ISD 55A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25...
Description 60V N-Channel MOSFET

File Size 658.23K  /  8 Page

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    IXFN110N60P3

IXYS Corporation
Part No. IXFN110N60P3
OCR Text ...th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS = 30V, VDS = 0V VDS = VDSS, VGS = 0V VGS = 10V, ID = 55A, Note 1 TJ = 125C Characteristic Values Min. Typ. Max. 600 3.0 5.0 V V Applications DC-DC Converters Battery Chargers ...
Description Polar3 HiPerFET Power MOSFET

File Size 120.26K  /  5 Page

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    Infineon
Part No. SPI80N03S2L-05
OCR Text ... Product Summary VDS RDS(on) ID P- TO263 -3-2 30 5.2 80 P- TO220 -3-1 V m A * Enhancement mode * Logic Level * Excellent Gate ...55A V GS=4.5V, ID=55A, SMD version Drain-source on-state resistance4) V GS=10V, ID=55A V GS=10V,...
Description Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-262, RDSon = 5.2mOhm, 80A, LL

File Size 520.57K  /  8 Page

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    Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. FQI55N10 FQB55N10
OCR Text ...te Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Cont...55A, VDD = 25V, RG = 25 , Starting TJ = 25C 3. ISD 55A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25...
Description 100V N-Channel MOSFET 55 A, 100 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA

File Size 670.82K  /  9 Page

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    IRFN054

International Rectifier
Part No. IRFN054
OCR Text ...LOGY (R) RDS(on) 0.020 ID 55A* HEXFET(R) MOSFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with hig...
Description 60V Single N-Channel Hi-Rel MOSFET in a SMD-1 package

File Size 486.39K  /  7 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FQI55N06 FQB55N06 FQB55N06TM
OCR Text ...te Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Cont...55A, VDD = 25V, RG = 25 , Starting TJ = 25C 3. ISD 55A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25...
Description 60V N-Channel QFET
60V N-Channel MOSFET

File Size 599.61K  /  9 Page

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For id-55a Found Datasheets File :: 285    Search Time::1.281ms    
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