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  id-4.1a Datasheet PDF File

For id-4.1a Found Datasheets File :: 9374    Search Time::1.422ms    
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    Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
Part No. 2509Z
OCR Text ...imum Ratings Symbol VDSS VGSS ID PD TJ, TSTG TA=25oC unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage - Co...4 36 1200 320 f = 1.0 MHz 185 2 12 1 10 1.5 mV/C A A V mV/C m On Characteristics Gate Threshol...
Description Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET 单片共漏N沟道MOSFET的为2.5V指定PowerTrench

File Size 188.13K  /  6 Page

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    FDC633NNF073

Fairchild Semiconductor
Part No. FDC633NNF073
OCR Text ...ted Symbol Parameter VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage - Continuous Drain Current - Continuous - Pulsed Maximum Powe...4.5 V, ID = 5.2 A TJ = 125 C VGS = 2.5 V, ID = 4.5 A ID(on) gFS Ciss Coss Crss tD(on) tr tD(off) tf ...
Description 30V N-Channel Enhancement Mode Field Effect Transistor

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    FDC637ANNF073

Fairchild Semiconductor
Part No. FDC637ANNF073
OCR Text ...imum Ratings Symbol VDSS VGSS ID PD TJ, T stg Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current - Continuous - Pulsed ...4.5 V,ID = 6.2 A VGS = 4.5 V,ID = 6.2 A,TJ=125C VGS = 2.5 V, ID = 5.2 A VGS = 4.5 V, VDS = 5 V VDS =...
Description Single N-Channel 2.5V Specified PowerTrench MOSFET

File Size 61.59K  /  5 Page

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    UPA1572B UPA1572BH

NEC[NEC]
Part No. UPA1572B UPA1572BH
OCR Text ...DS(on) = 0.6 MAX. (VGS = 10 V, ID = 1 A) RDS(on) = 0.8 MAX. (VGS = 4 V, ID = 1 A) * Low Input Capacitance Ciss = 110 pF TYP. 2.54 1.4 0.60.1 ORDERING INFORMATION Type Number Package 10Pin SIP 3 1 2 3 4 5 6 7 8 910 PA1572BH ...
Description N-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE

File Size 86.01K  /  8 Page

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    IRF7342QPBF10 IRF7342QTRPBF

International Rectifier
Part No. IRF7342QPBF10 IRF7342QTRPBF
OCR Text ...Maximum Ratings Parameter VDS ID @ TC = 25C ID @ TC = 70C IDM PD @TC = 25C PD @TC = 70C VGS VGSM EAS dv/dt TJ, TSTG Drain- Source Voltage ...4 -2.7 -27 2.0 1.3 0.016 20 30 114 5.0 -55 to + 150 Units V A W W/C V V V/ns C Thermal Resis...
Description HEXFET庐 Power MOSFET
HEXFET? Power MOSFET
Advanced Process Technology

File Size 162.89K  /  7 Page

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    FDC642PNF073

Fairchild Semiconductor
Part No. FDC642PNF073
OCR Text ...imum Ratings Symbol VDSS VGSS ID PD TJ, Tstg Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current - Continuous - Pulsed ...4 -20 1.6 0.8 -55 to +150 Power Dissipation for Single Operation Operating and Storage Junctio...
Description P-Channel 2.5V Specified PowerTrench MOSFET

File Size 122.49K  /  5 Page

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    Analog Power
Part No. AM2302N
OCR Text ...s(on) - on - resistance( ) id - drain current (a) 2v 3v,3.5v,4v,4.5v,6v 2.5v 0 1 2 3 0 0.1 0.2 0.3 0.4 id - drain current (a) vds - drain - to - source voltage (v) 6v,4.5v,4v,3.5v,3v 2v 2.5v 0 0.1 0.2 0.3 0.4 0 ...
Description N-Channel 20-V (D-S) MOSFET

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    FS3VS-9

Renesas Electronics Corporation
Part No. FS3VS-9
OCR Text .............................. 3.5 ID ............................................................................................ 3A q GATE...4.5 Unit V V A A W C C g Feb.1999 Typical value (1.5) MITSUBISHI Nch POWER MOSFET F...
Description MITSUBISHI Nch POWER MOSFET

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    FS3VS-10

Renesas Electronics Corporation
Part No. FS3VS-10
OCR Text .............................. 4.4 ID ............................................................................................ 3A q GATE w DRAIN e SOURCE r DRAIN e TO-220S APPLICATION SMPS, DC-DC Converter, battery charger, power ...
Description MITSUBISHI Nch POWER MOSFET

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    FDY1002PZ

Fairchild Semiconductor
Part No. FDY1002PZ
OCR Text ...rDS(on) = 0.5 at VGS = -4.5 V, ID = -0.83 A Max rDS(on) = 0.7 at VGS = -2.5 V, ID = -0.70 A Max rDS(on) = 1.2 at VGS = -1.8 V, ID = -0.43 A Max rDS(on) = 1.8 at VGS = -1.5 V, ID = -0.36 A HBM ESD protection level = 1400 V (Note 3) RoHS ...
Description Dual P-Channel (-1.5 V) Specified PowerTrench MOSFET

File Size 242.26K  /  7 Page

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