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gate-pulsed Datasheet PDF File

For gate-pulsed Found Datasheets File :: 46962 Search Time::2.032ms
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				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	IRF530N
OCR Text	...kage. PINNING PIN 1 2 3 tab gate drain source drain DESCRIPTION SOT78 (TO220AB) tab drain 123 gate source drain LIMITING VALUE...Pulsed drain current Total power dissipation Operating junction and storage temperature CONDITIONS T...
Description	N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体 N-channel TrenchMOS TM transistor
File Size	95.87K / 7 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	STI30NM60ND STW30NM60ND STX30NM60ND STP30NM60ND STF30NM60ND STB30NM60ND
OCR Text	...ested Low input capacitance and gate charge Low gate input resistance Extremely high dv/dt and avalanche capabilities TO-220 1 2 ...pulsed) Total dissipation at TC = 25 C Peak diode recovery voltage slope Insulation withstand voltag...
Description	N-channel 600 V, 0.11 Ω, 25 A FDmesh II Power MOSFET (with fast diode) TO-220, TO-220FP, D2PAK, I2PAK, TO-247 N-channel 600 V, 0.11 Ω, 25 A FDmesh?/a> II Power MOSFET (with fast diode) TO-220, TO-220FP, D2PAK, I2PAK, TO-247
File Size	768.39K / 18 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	STB20NK50Z STF20NK50Z STB20NK50Z09 STW20NK50Z STP20NK50Z
OCR Text	...apability 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability Figure 1. TO-24...pulsed) Total dissipation at TC = 25 C Derating factor 10.71 68 40 PTOT VISO Insulation ...
Description	N-channel 500 V, 0.23 Ω, 17 A SuperMESH Power MOSFET Zener-protected TO-220, TO-247, TO-220FP, D2PAK
File Size	586.41K / 18 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MRFE6VP61K25HR6 MRFE6VP61K25HR611 MRFE6VP61K25HSR6
OCR Text	...rotection with Greater Negative Gate--Source Voltage Range for Improved Class C Operation * Characterized with Series Equivalent Large--Sign...Pulsed, 100 sec Pulse Width, 20% Duty Cycle, 100 mA, 230 MHz Case Temperature 63C, 1250 W CW, 100 mA...
Description	RF Power Field Effect Transistors Enhancement--Mode Lateral MOSFETs
File Size	925.75K / 13 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MRFE6VP61K25HR6 MRFE6VP61K25HSR6
OCR Text	...rotection with Greater Negative Gate--Source Voltage Range for Improved Class C Operation * Characterized with Series Equivalent Large--Sign...Pulsed, 100 sec Pulse Width, 20% Duty Cycle, 100 mA, 230 MHz Case Temperature 63C, 1250 W CW, 100 mA...
Description	RF Power Field Effect Transistors High Ruggedness N--Channel Enhancement--Mode
File Size	924.80K / 13 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	SFW9614TM
OCR Text	...he rugged technology rugged gate oxide technology lower input capacitance improved gate charge extended safe operating area...pulsed gate-to-source voltage single pulsed avalanche energy ...
Description	250V P-Channel A-FET
File Size	286.04K / 7 Page	View it Online	Download Datasheet

				SemiHow Co.,Ltd.
Part No.	HFP9N50
OCR Text	...anche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate...Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt T...
Description	500V N-Channel MOSFET
File Size	947.91K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD SEMICONDUCTOR CORP Fairchild Semiconductor, Corp.
Part No.	FSDM0565RB FSDM0565RB06 FSDM0565RBWDTU FSDM0565RBIWDTU
OCR Text	... edge blanking (LEB), optimized gate driver, internal soft start, temperature compensated precise current sources for a loop compensation an...Pulsed Drain current (Tc=25C) (1) Symbol VDSS VSTR IDM ID EAS IAS VCC VFB Value 650 650 11 2....
Description	SMPS Power Switch, Built-in Soft Start improved (Green); ; No of Pins: 6; Container: Rail 11 A SWITCHING REGULATOR, 72 kHz SWITCHING FREQ-MAX, PZFM6 Green Mode Fairchild Power Switch (FPSTM)
File Size	471.68K / 20 Page	View it Online	Download Datasheet

				Diodes Incorporated
Part No.	DMN4027SSS DMN4027SSS-13
OCR Text	...m Ratings Drain-Source voltage Gate-Source voltage Continuous Drain current @TA = 25C unless otherwise specified Symbol VDSS VGS ID IDM ...Pulsed Drain current VGS= 10V Continuous Source current (Body diode) Pulsed Source current (Body dio...
Description	40V N-CHANNEL ENHANCEMENT MODE MOSFET
File Size	671.76K / 8 Page	View it Online	Download Datasheet

				Infineon Technologies AG Infineon Technologies A...
Part No.	BSP299 BSP29909
OCR Text	...5 C mJ 130 V GS P tot Gate source voltage Power dissipation TA = 25 C 20 1.8 V W Rev 2.1 1 2009-03-25 BSP 29...pulsed TA = 25 C ISM V SD - 1.6 V Inverse diode forward voltage V GS = 0 V, IF = 0....
Description	SIPMOS Small-Signal Transistor
File Size	252.20K / 10 Page	View it Online	Download Datasheet

For gate-pulsed Found Datasheets File :: 46962 Search Time::2.032ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | <10> | 11 | 12 | 13 | 14 | 15 |