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Shenzhen Winsemi Microelectronics Co., Ltd
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| Part No. |
WFD1N60
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| OCR Text |
...) 3 2 w dera t i n g f a c to r abov e 25 0 . 2 4 w / t j , t s tg j unc t i o n an d s torag e t e m peratur e -55 ~ 15 0 t l m ax i m u m l ea d t e m peratur e f o r so l der i n g purpo s e s 30 0 t h e rm a l c ha r a ct er istics ... |
| Description |
Silicon N-Channel MOSFET
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| File Size |
582.17K /
7 Page |
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it Online |
Download Datasheet
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NXP Semiconductors N.V.
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| Part No. |
MA4ST2600CK-1146T
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| OCR Text |
... 1. operation of this device abov e any one of these parameters may cause permanent damage. 2. please refer to applicati on note m538 for surface mounting instructions parameter absolute maximum reverse voltage 12 v forward curr... |
| Description |
Ultra High Ratio Si Hyperabrupt Varactor Diode 超高比泗Hyperabrupt变容二极
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| File Size |
92.47K /
5 Page |
View
it Online |
Download Datasheet
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Price and Availability
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