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Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQI5N60C FQB5N60C FQB5N60CTM
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| OCR Text |
... junction temperature 2. L = 18.9mh, IAS = 4.5 A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 4.5A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating te... |
| Description |
600V N-Channel MOSFET 4.5 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET
600V N-Channel Advance QFET C-Series
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| File Size |
618.77K /
9 Page |
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FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
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| Part No. |
FQI9N25C FQB9N25C FQB9N25CTM FQI9N25CTU
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| OCR Text |
...m junction temperature 2. L = 5.9mh, IAS = 8.8A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 8.8A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating tem... |
| Description |
250V N-Channel Advance Q-FET C-Series
250V N-Channel MOSFET 8.8 A, 250 V, 0.43 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
865.84K /
9 Page |
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FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
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| Part No. |
FQU12N20L FQD12N20L FQU12N20 FQD12N20LTF FQD12N20LTM
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| OCR Text |
...m junction temperature 2. L = 3.9mh, IAS = 9.0A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 11.6A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating te... |
| Description |
200V N-Channel Logic Level QFET
200V LOGIC N-Channel MOSFET 9 A, 200 V, 0.32 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
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| File Size |
605.48K /
9 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQU5N60C FQD5N60C FQD5N60CTM FQD5N60CTF FQU5N60CTU
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| OCR Text |
... junction temperature 2. L = 18.9mh, IAS = 4.5 A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 4.5A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating te... |
| Description |
600V N-Channel Advance QFET C-Series
600V N-Channel MOSFET
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| File Size |
612.44K /
9 Page |
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IRF[International Rectifier]
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| Part No. |
IRFU3911PBF IRFR3911PBF
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| OCR Text |
...SS
Starting TJ = 25C, L = 1.9mh
RG = 25, IAS = 8.4A.
ISD 8.4A, di/dt 320A/s, VDD V(BR)DSS,
TJ 175C * When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to applicatio... |
| Description |
SMPS MOSFET
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| File Size |
218.53K /
10 Page |
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IRF[International Rectifier]
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| Part No. |
IRL3215PBF
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| OCR Text |
...ed by Starting TJ = 25C, L = 4.9mh
max. junction temperature. ( See fig. 11 )
Pulse width 300s; duty cycle 2%. Caculated continuous current based on maximum allowable
RG = 25, IAS = 7.2A. (See Figure 12) TJ 175C
ISD 7.2A... |
| Description |
HEXFET Power MOSFET
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| File Size |
171.33K /
8 Page |
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IRF[International Rectifier]
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| Part No. |
IRL540N
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| OCR Text |
... 11 ) Starting TJ = 25C, L = 1.9mh RG = 25, IAS = 18A. (See Figure 12) .
I SD 18A, di/dt 180A/s, VDD V(BR)DSS , Pulse width 300s; duty cycle 2%
TJ 175C
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IRL540N
1... |
| Description |
HEXFET Power MOSFET
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| File Size |
240.97K /
8 Page |
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IRF[International Rectifier]
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| Part No. |
IRL5NJ024 IRL5NJ024-15
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| OCR Text |
... = 25 V, Starting TJ = 25C, L=0.9mh Peak IAS =11A, VGS = 5.0 V, RG= 25
ISD 11A, di/dt 230 A/s, Pulse width 300 s; Duty Cycle 2%
VDD 55V, TJ 150C
Case Outline and Dimensions -- SMD-0.5
PAD ASSIGNMENTS
IR WORLD HEADQUARTE... |
| Description |
LOGIC LEVEL HEXFET POWER MOSFET SURFACE MOUNT (SMD-0.5)
55V Single N-Channel Hi-Rel MOSFET in a SMD-0.5 package
Simple Drive Requirements
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| File Size |
113.32K /
7 Page |
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IRF[International Rectifier]
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| Part No. |
IRL7YS1404CM
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| OCR Text |
...= 25 V, Starting TJ = 25C, L= 3.9mh Peak IAS = 20A, VGS =10V, RG= 25
ISD 20A, di/dt 175A/s, Pulse width 300 s; Duty Cycle 2%
VDD 40V, TJ 150C
Case Outline and Dimensions -- Low-ohmic TO-257AA
A 10.66 [.420] 10.42 [.410] 3.81... |
| Description |
55V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
HEXFET POWER MOSFET THRU-HOLE (Low-ohmic TO-257AA) 40V, N-CHANNEL
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| File Size |
126.64K /
7 Page |
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