80-200v pdf Datasheet P10 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : SFF162C RGL41J 1N961 STRL451 PDTA144W HVB14S CPT1003 2038762
	Product Description
	Full Text Search

80-200v Datasheet PDF File

For 80-200v Found Datasheets File :: 13108 Search Time::4.625ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | <10> | 11 | 12 | 13 | 14 | 15 |

				SHARP[Sharp Electrionic Components]
Part No.	S26MD01 S26MD02 S16MD01 S16MD02 S26.D01 S26.D02
OCR Text	...6 0.6 6 400 600 4 000 - 25 to + 80 - 40 to + 125 260 Unit mA V A rms A V V V rms C C C " In the absence of confirmation by device specifi...200V (S26MD01/S26MD02) ( 1 ) DC Drive AC supply voltage Input signal Load current ( for resistanc...
Description	8-Pin DIP Type SSR for Low Power Control
File Size	66.31K / 4 Page	View it Online	Download Datasheet

				SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No.	2SK2677
OCR Text	...valanche Energy Derating [%] 80 60 40 20 0 0 50 100 150 Starting Channel Temperature Tch [C] 2SK2677 10000...200V 100V 200 10 5 100 ID = 10A TYP 0 0 50 100 0 150 Gate Charge Qg [nC] Gate-Source Voltag...
Description	HVX-2 Series Power MOSFET(900V 10A)
File Size	417.58K / 12 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology] Microsemi, Corp.
Part No.	APT5010B2VFR
OCR Text	... 8900 1400 570 470 75 190 30 32 80 10 ns nC Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay ...200V. APT Reserves the right to change, without notice, the specifications and information contai...
Description	POWER MOS V 500V 47A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. TERM BLOCK 10MM VERT 3POS PCB 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
File Size	64.50K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5010JVFR
OCR Text	... 8900 1400 570 470 75 190 30 32 80 10 ns nC Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay ...200V APT Reserves the right to change, without notice, the specifications and information contained...
Description	POWER MOS V 500V 44A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	73.63K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
Part No.	APT5010JVRU2
OCR Text	... 6V ID, DRAIN CURRENT (AMPERES) 80 VGS=15V 6V VGS=7V, 8V & 10V 5.5V 80 60 5.5V 60 40 5V 40 5V 20 4.5V 4V 0 50 100...200V APT5010JVRU2 DYNAMIC CHARACTERISTICS Symbol trr1 trr2 trr3 tfr1 tfr2 IRRM1 IRRM2 Qrr1 Qrr2 ...
Description	POWER MOS V 500V 44A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	110.72K / 7 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
Part No.	APT5010JVRU3
OCR Text	... 6V ID, DRAIN CURRENT (AMPERES) 80 VGS=15V 6V VGS=7V, 8V & 10V 5.5V 80 60 5.5V 60 40 5V 40 5V 20 4.5V 4V 0 50 100...200V APT5010JVRU3 DYNAMIC CHARACTERISTICS Symbol trr1 trr2 trr3 tfr1 tfr2 IRRM1 IRRM2 Qrr1 Qrr2 ...
Description	POWER MOS V 500V 44A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	111.65K / 7 Page	View it Online	Download Datasheet

				Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
Part No.	APT5010LVFR APT20M22LVFR
OCR Text	... 8900 1400 570 470 75 190 30 32 80 10 ns nC Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay ...200V. APT Reserves the right to change, without notice, the specifications and information containe...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 500V 47A 0.100 Ohm
File Size	66.12K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5017BVFR
OCR Text	... UNIT pF 4400 600 230 200 30 80 12 14 55 11 5280 840 350 300 45 120 25 30 80 20 ns nC Gate-Source Charge Gate-Drain ("Miller") Cha...200V. APT Reserves the right to change, without notice, the specifications and information containe...
Description	POWER MOS V 500V 30A 0.170 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	62.45K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5020BVFR
OCR Text	...5 20 15 0.8 0 20 40 60 80 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 25 I = 0.5 I [Cont.] D D GS 1.15 1.10 1.05 1.00 10 5 0 0.95 50...
Description	POWER MOS V 500V 26A 0.200 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	61.42K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
Part No.	APT5020SVFR APT5020
OCR Text	...5 20 15 0.8 0 20 40 60 80 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 25 I = 0.5 I [Cont.] D D GS 1.15 1.10 1.05 1.00 10 5 0 0.95 50...
Description	24 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 500V 26A 0.200 Ohm
File Size	64.36K / 4 Page	View it Online	Download Datasheet

For 80-200v Found Datasheets File :: 13108 Search Time::4.625ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | <10> | 11 | 12 | 13 | 14 | 15 |