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  720v Datasheet PDF File

For 720v Found Datasheets File :: 431    Search Time::0.985ms    
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    IRFAF40

IR
International Rectifier
Part No. IRFAF40
OCR Text ...=250A VDS > 15V, IDS =2.7A VDS=720v, VGS=0V VDS = 720v VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS = 10V, ID = 4.3A VDS = 450V VDD =400V*, ID = 4.3A, RG =9.1 Drain-to-Source Breakdown Voltage Temperature Coefficient of Breakdown Voltag...
Description HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) 900V, N-CHANNEL

File Size 150.01K  /  7 Page

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    SSP5N90A SSP5N90

FAIRCHILD[Fairchild Semiconductor]
Part No. SSP5N90A SSP5N90
OCR Text ...A VGS=30V VGS=-30V VDS=900V VDS=720v,TC=125 C VGS=10V,ID=2.5A VDS=50V,ID=2.5A 4 O* 4 O V/ C ID=250A pF 1110 1440 VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=450V,ID=5A, RG=13.6 See Fig 13 VDS=720v,VGS=10V, ID=5A See Fig 6 & Fig ...
Description Advanced Power MOSFET

File Size 41.79K  /  2 Page

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    2SK3678-010306

Fuji Electric
Part No. 2SK3678-010306
OCR Text ... dss v ds =900v v gs =0v v ds =720v v gs =0v v gs =30v i d =4.5a v gs =10v i d =4.5a v ds =25v v cc =600v i d =4.5a v gs =10v r gs =10 ? min. typ. max. units v v a na ? s pf nc a v s c ns min. typ. max....
Description N-CHANNEL SILICON POWER MOSFET

File Size 115.50K  /  4 Page

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    2SK1358

TOSHIBA[Toshiba Semiconductor]
Part No. 2SK1358
OCR Text ...nt - IDSS = 300A (Max.) @ VDS = 720v * Enhancement-Mode - Vth = 1.5 ~ 3.5V @ VDS = 10V, ID = 1mA Absolute Maximum Ratings (Ta = 25C) CHARACTERISTIC Drain-Source Voltage Drain-Gate Voltage (RGS = 20k) Gate-Source Voltage Drain Current DC P...
Description FET Silicon N Channel MOS Type(for High Speed High Current DC-DC Converter Relay Drive and Motor Diver)
Field Effect Transistor
FET, Silicon N Channel MOS Type(for High Speed, High Current DC-DC Converter, Relay Drive and Motor Diver)
FET/ Silicon N Channel MOS Type(for High Speed/ High Current DC-DC Converter/ Relay Drive and Motor Diver)

File Size 568.42K  /  6 Page

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    ST Microelectronics
Part No. STBW9NK90Z
OCR Text ...pacitance v gs =0, v ds =0v to 720v 115 pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =720v, i d = 8a v gs =10v (see figure 19) 72 14 38 100 nc nc nc symbol parameter test conditions min. typ. max. unit t ...
Description N-CHANNEL MOSFET

File Size 419.97K  /  15 Page

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    Fairchild Semiconductor Corporation
Part No. SSF10N90A
OCR Text ...30v v gs =-30v v ds =900v v ds =720v,t c =125 o c v gs =10v,i d =3.25a * v ds =50v,i d =3.25a v dd =450v,i d =10a, r g =9.6 w see fig 13 v ds =720v,v gs =10v, i d =10a see fig 6 & fig 12 drain-to-source leakage cu...
Description N-Channel Power MOSFET.5A00V.2ΩN沟道功率MOS场效应管(漏电流6.5A, 漏源电压900V,导通电.2Ω

File Size 239.13K  /  7 Page

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    IRG4ZH71KD

International Rectifier
Part No. IRG4ZH71KD
OCR Text ... control, t sc =10s, v cc = 720v , t j = 125c, v ge = 15v ? igbt co-packaged with hexfred ? ultrafast, ultra-soft-recovery antiparallel diodes for use in bridge configurations ? combines low conduction losses with high swi...
Description 1200V Copack IGBT in a SMD-10 package

File Size 241.49K  /  10 Page

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    SSFP8N90

GOOD-ARK Electronics
Part No. SSFP8N90
OCR Text ...ge current 100 a v ds =720v,v gs =0v,t j =125 ? c gate-to-source forward leakage 100 v gs =30v i gss gate-to-source reverse leakage -100 na v gs =-30v q g total gate charge 35 45 q gs gate-to-source c...
Description StarMOST Power MOSFET

File Size 122.77K  /  2 Page

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