| |
|
 |
SGS Thomson Microelectronics
|
| Part No. |
STP6NC80Z
|
| OCR Text |
...ns q g total gate charge v dd = 640v, i d = 6a, v gs = 10v 45 nc q gs gate-source charge 12 nc q gd gate-drain charge 18 nc symbol parameter test condit ions min. typ. max. unit t r(voff) off-voltage rise time v dd = 640v, i d =6a, r g =4.7... |
| Description |
N-CHANNEL 800V 1.5OHM 5.4A TO-220/TO-220FP/I2PAK/ ZENER-PROTECTED POWERMESH III MOSFET
|
| File Size |
122.69K /
11 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
Microsemi
|
| Part No. |
APT8020LFLLG
|
| OCR Text |
...voltage drain current (v ds = 640v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 2.5ma) symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as p... |
| Description |
FREDFETs
|
| File Size |
164.78K /
5 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
| Part No. |
STW18NK80Z
|
| OCR Text |
... nC nC
VGS = 0V, VDS = 0V to 640v VDD = 400 V, ID = 9 A RG = 4.7 VGS = 10 V (Resistive Load see, Figure 3) VDD = 640v, ID = 18 A, VGS = 10V
SOURCE DRAIN DIODE
Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM trr Qrr IRRM Parameter Source-dra... |
| Description |
N-CHANNEL 800V 0.34 OHM 18A TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET N-CHANNEL 800V - 0.34W - 19A TO-247 Zener-Protected SuperMESH⑩Power MOSFET N-CHANNEL MOSFET N-CHANNEL 800V - 0.34W - 19A TO-247 Zener-Protected SuperMESH?Power MOSFET
|
| File Size |
308.37K /
9 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|