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Alpha & Omega Semiconductor
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| Part No. |
AOTF11N60
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| OCR Text |
... aot11n60l aotf11n60 aotf11n60l 600 v gate-source voltage t c =100c a pulsed drain current c continuous drain current t c =25c i d 11 11* 8...5a forward transconductance diode forward voltage electrical characteristics (t j =25c unless otherw... |
| Description |
Single HV MOSFETs (500V - 1000V)
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| File Size |
352.46K /
6 Page |
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UTC[Unisonic Technologies]
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| Part No. |
1N60A
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| OCR Text |
600 Volts N-CHANNEL MOSFET
DESCRIPTION
The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast...5a CISS COSS CRSS tD (ON) tR tD (OFF) tF QG QGS QGD
On Characteristics Gate Threshold Voltage Sta... |
| Description |
0.5 Amps, 600 Volts N-CHANNEL MOSFET
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| File Size |
136.48K /
8 Page |
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TY Semiconductor Co., Ltd
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| Part No. |
AOT10T60P
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| OCR Text |
...0t60pl 10* 6.6* 33 480 50 10 40 600 30 50 15 -55 to 150 300 0.26 -- c/w 65 3.8 c/w c/w g d s top view g d s to-220f aotf10t60p g d s to-220 ...5a v gs =10v, i d =5a v gs =0v, v ds =100v, f=1mhz maximum body-diode continuous current electrical ... |
| Description |
Trench Power AlphaMOS-II technology
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| File Size |
1,237.39K /
7 Page |
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RECTRON[Rectron Semiconductor]
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| Part No. |
FR156 FR151 FR155 FR152 FR153 FR157P FR154 FR155P FR157
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| OCR Text |
... 70 100 200 140 200 400 280 400 600 420 600 1.5 60 40 -65 to + 150 600 420 600 800 560 800 1000 700 1000 1000 700 1000 Volts Volts Volts Amp...5a DC Maximum DC Reverse Current at Rated DC Blocking Voltage TA = 25 oC Maximum Full Load Reverse C... |
| Description |
FAST RECOVERY RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.5 Amperes)
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| File Size |
24.11K /
2 Page |
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意法半导
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| Part No. |
T405-B
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| OCR Text |
600 V SENSITIVE GATE : IGT 5 mA LOGIC LEVEL HIGH NOISE IMMUNITY
A2
DESCRIPTION The T405-B triac is using a high performance TOPGLASS ...5a dIG/dt = 0.5a/s IG=1.2 IGT IT= 100mA gate open ITM= 5.5a tp= 380s VDRM Rated VRRM Rated Tj=25C Tj... |
| Description |
High Performance Triacs(高性能双向可控
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| File Size |
42.51K /
3 Page |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APTM100A13DG
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| OCR Text |
... 30 V, VDS = 0V
130 3
Max 600 2 156 5 450
Unit A mA m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr T...5a V GS=10V V GS=20V 6V VGS=15&10V 7V 6.5V
Transfert Characteristics 360 300 240 180 120 60 0 0 1... |
| Description |
Phase leg with Series diodes MOSFET Power Module
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| File Size |
268.23K /
6 Page |
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it Online |
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Price and Availability
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