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IRF[International Rectifier]
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| Part No. |
IRLI3615
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| OCR Text |
... 11 ) Starting TJ = 25C, L = 9.5mH RG = 25, I AS = 8.4A. (See Figure 12) ISD 8.4A, di/dt 510A/s, VDD V(BR)DSS, TJ 175C.
Pulse widt...9A 8.4A
VDS
L
D R IV E R
600
RG
20V tp
D .U .T
IA S
+ V - DD
A
400
0... |
| Description |
150V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
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| File Size |
98.54K /
8 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRFIB7N50APBF
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| OCR Text |
.... 11 ) Starting TJ = 25C, L = 4.5mH RG = 25, IAS = 11A. (See Figure 12) ISD 11A, di/dt 140A/s, VDD V(BR)DSS, TJ 150C Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS ... |
| Description |
SMPS MOSFET
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| File Size |
187.20K /
8 Page |
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it Online |
Download Datasheet |
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Cystech Electonics Corp...
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| Part No. |
MTB20N6KFP-0-UB-S
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| OCR Text |
...le pulse avalanche energy @ l=0.5mh, i d =20 amps, v dd =30v (note 4) e as 100 repetitive avalanche energy ... |
| Description |
N-Channel Enhancement Mode Power MOSFET
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| File Size |
392.95K /
8 Page |
View
it Online |
Download Datasheet |
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