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R5F100B L78M24CV 24152 2SC741 ULN2075B 60480 HA16666 2SK4057
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  4.3mh Datasheet PDF File

For 4.3mh Found Datasheets File :: 761    Search Time::5.64ms    
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    FQI8N60C FQB8N60C FQB8N60CTM

FAIRCHILD[Fairchild Semiconductor]
Part No. FQI8N60C FQB8N60C FQB8N60CTM
OCR Text ... FQB8N60C / FQI8N60C 600 7.5 4.6 30 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/C C C Gate-Source V...3mH, IAS = 7.5 A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 7.5A, di/dt 200A/s, VDD BVDSS, St...
Description 600V N-Channel Advance Q-FET C-Series
600V N-Channel MOSFET

File Size 641.88K  /  9 Page

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    FQP8N60C FQPF8N60C

FAIRCHILD[Fairchild Semiconductor]
Part No. FQP8N60C FQPF8N60C
OCR Text ...d (Note 1) FQP8N60C 600 7.5 4.6 30 FQPF8N60C 7.5 * 4.6 * 30 * 30 230 7.5 14.7 4.5 Units V A A A V mJ A mJ V/ns W W/C C C Gate-...3mH, IAS = 7.5 A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 7.5A, di/dt 200A/s, VDD BVDSS, St...
Description 600V N-Channel Advance Q-FET C-Series
600V N-Channel MOSFET

File Size 924.66K  /  10 Page

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    IRF5NJ9540 IRF5NJB9540

International Rectifier
Part No. IRF5NJ9540 IRF5NJB9540
OCR Text ...8 -11 -72 75 0.6 20 260 -11 7.5 4.1 -55 to 150 300 (for 5 s) 1.0 (Typical) Units A W W/C V mJ A mJ V/ns o C g For footnote...3mH Peak IAS = -11A, VGS = -10 V, RG= 25 ISD -11A, di/dt -360 A/s, Pulse width 300 s; Duty C...
Description -100V Single P-Channel Hi-Rel MOSFET in a SMD-0.5 package
SURFACE MOUNT (SMD-0.5) 100V, P-CHANNEL
POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.117ohm, Id=-18A)

File Size 115.30K  /  7 Page

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    1800 18224 18106 18475 18472 18223 18335 18103 18104 18333 18334 18153 18682 18683 18684 18685 18473 18154 18155 18105 1

CANDD[C&D Technologies]
Part No. 1800 18224 18106 18475 18472 18223 18335 18103 18104 18333 18334 18153 18682 18683 18684 18685 18473 18154 18155 18105 18225 18254 18474
OCR Text ...255 335 465 630 1.0 1.5 2.2 3.5 4.6 7.0 12 A MAX 5.35 4.15 3.45 3.00 2.42 2.00 1.65 1.35 1.20 1.10 0.90 0.80 0.73 0.60 0.53 0.44 0.33 0.3...3mH 4.7mH 6.8mH 10mH FEATURES s Axial Format s Up to 5.35A IDC s 4.7H to 10mH s Low DC Resistance...
Description GIGABASE 350 CAT5E PATCH 100 FT, SNAGLSS BL 25PAK 1 ELEMENT, 0.01 uH, GENERAL PURPOSE INDUCTOR
GIGABASE 350 CAT5E PATCH 50 FT, SNAGLSS BL 25PAK 1 ELEMENT, 100 uH, GENERAL PURPOSE INDUCTOR
CAT5E 350MHZ PATCH CABLE 7FT, SNAGLESS, BEIGE
CAT5E 350MHZ PATCH CABLE 15FT, SNAGLESS, BEIGE
GIGABASE 350 CAT5E PATCH 4 FT, SNAGLESS, RED
GIGABASE 350 CAT5E PATCH 2 FT, SNAGLESS, PINK
Connector assemblies, Network cables; Drop Ship:Yes
Connector assemblies, Network cables; Connector Type A:RJ45 Plug; Connector Type B:RJ45 Plug; Drop Ship:Yes
GBASE 350 C5E BGE STRANDED BLK 500FT
GBASE 350 C5E BGE STRNDED BLK 1000FT
ENHANCED PATCH CORD, BLUE50 FEET.
   Axial Lead Inductors

File Size 51.45K  /  2 Page

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    2SC4139 2SC3831

SANKEN[Sanken electric]
Part No. 2SC4139 2SC3831
OCR Text ...ions MT-100(TO3P) 5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) ...3mH IB2=-1A Duty:less than 1% 50 1 5 10 50 100 500 Collector-Emitter Voltage V C E( V) 1 5 ...
Description Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)

File Size 24.42K  /  1 Page

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    FQP90N10V2 FQPF90N10V2

FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
Part No. FQP90N10V2 FQPF90N10V2
OCR Text ... 90 * 68 * 360 * 30 2430 90 25 4.5 Units V A A A V mJ A mJ V/ns W W/C C C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanch...3mH, IAS = 90A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 90A, di/dt 200A/s, VDD BVDSS, Start...
Description 100V N-Channel Advanced QFET V2 series
100V N-Channel MOSFET 90 A, 100 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

File Size 918.56K  /  10 Page

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    IRFM9240 JANTXV2N7237 JANTX2N7237

International Rectifier
Part No. IRFM9240 JANTXV2N7237 JANTX2N7237
OCR Text ...- -- -- -- 6.8 -- -- 0.51 0.52 -4.0 -- -25 -250 -100 100 60 15 38 35 85 85 65 -- V V/C V S( ) A Test Conditions VGS = 0V, ID = -1.0mA...3mH Peak IL = -11A, VGS = -10V Foot Notes: ISD -11A, di/dt -150A/s, VDD -200V, TJ 150C ...
Description POWER MOSFET THRU-HOLE (TO-255AA)
POWER MOSFET THRU-HOLE (TO-257AA)
POWER MOSFET THRU-HOLE (TO-256AA)

File Size 194.60K  /  7 Page

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    IRFN9240 JANTXV2N7237U JANTX2N7237U

International Rectifier
Part No. IRFN9240 JANTXV2N7237U JANTX2N7237U
OCR Text ...- -- -- -- -- -- -- -- -- -- -- 4.0 -- -- 0.51 0.52 -4.0 -- -25 -250 -100 100 60 15 38 35 85 85 65 -- V V/C V S( ) A Test Conditions ...3mH Peak IL = -11A, VGS = -10V Foot Notes: VDD -200V, TJ 150C Suggested RG =7.5 Pulse width...
Description POWER MOSFET

File Size 182.32K  /  7 Page

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    IRFI4905

IRF[International Rectifier]
Part No. IRFI4905
OCR Text ...l Sink to Lead Creepage Dist. = 4.8mm l P-Channel l Fully Avalanche Rated Description l l D VDSS = -55V RDS(on) = 0.02 G S ID =...3mH RG = 25, IAS = -38A. (See Figure 12) ISD -38A, di/dt -270A/s, V DD V(BR)DSS , TJ 175C ...
Description HEXFET Power MOSFET
HEXFET? Power MOSFET

File Size 113.77K  /  8 Page

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    IRF5NJ3315

IRF[International Rectifier]
Part No. IRF5NJ3315
OCR Text ...- -- -- -- -- -- -- -- -- -- -- 4.0 -- -- 0.08 4.0 -- 25 250 100 -100 95 11 47 25 60 75 60 -- V V/C V S( ) A Test Conditions VGS = 0V...3mH Peak IAS = 12A, VGS = 10 V, RG= 25 ISD 12A, di/dt 120 A/s, Pulse width 300 s; Duty Cycle ...
Description 150V Single N-Channel Hi-Rel MOSFET in a SMD-0.5 package
POWER MOSFET N-CHANNEL(Vdss=150V, Rds(on)=0.08ohm, Id=20A)
SURFACE MOUNT (SMD-0.5) 150V, N-CHANNEL
POWER MOSFET N-CHANNEL(Vdss=150V/ Rds(on)=0.08ohm/ Id=20A)

File Size 113.49K  /  7 Page

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For 4.3mh Found Datasheets File :: 761    Search Time::5.64ms    
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