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ST Microelectronics
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| Part No. |
STD2N50-1
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| OCR Text |
... = 1 mhz v gs = 0 200 35 12 270 50 18 pf pf pf std2n50 2/10
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on time rise time v dd = 200 v i d = 1 a r g... |
| Description |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
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| File Size |
356.47K /
10 Page |
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Microsemi
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| Part No. |
1N986B-1
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| OCR Text |
...00 .25 5.5 0.5 52 1n982b 75 1.7 270 2000 .25 5.0 0.5 56 1n983b 82 1.5 330 3000 .25 4.6 0.5 62 1n984b 91 1.4 400 3000 .25 4.1 0.5 69 1n985b 100 1.3 500 3000 .25 3.7 0.5 76 1n986b 110 1.1 750 4000 .25 3.3 0.5 84 note 1 zener voltage tolerance... |
| Description |
METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION
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| File Size |
125.75K /
3 Page |
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ST Microelectronics
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| Part No. |
STB80NF03L-04-1
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| OCR Text |
...v (resistive load, figure 3) 30 270 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =24v i d =80 a v gs =4...1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd =... |
| Description |
N-CHANNEL POWER MOSFET
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| File Size |
343.76K /
11 Page |
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it Online |
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