| |
|
 |
Integrated Circuit Solution
|
| Part No. |
41C16256
|
| OCR Text |
...n. Read/Write Cycle Time (tRC) -25(5V) 25 10 12 10 45 -35 35 10 18 12 60 -50 50 14 25 20 90 -60 60 15 30 25 110 Unit ns ns ns ns ns
PIN C...COL ROW/COL ROW/COL ROW/COL ROW/COL ROW/COL ROW/COL ROW/COL NA/COL NA/NA ROW/COL NA/COL ROW/COL NA/C... |
| Description |
Search --To IS41C16256
|
| File Size |
257.98K /
20 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
Samsung Electronic
|
| Part No. |
M464S6453CKS
|
| OCR Text |
... 1 3 5 7 9 11 13 15 17 19 21 23 25 27 29 31 33 35 37 39 41 43 45 47 49 VSS DQ0 DQ1 DQ2 DQ3 VD D DQ4 DQ5 DQ6 DQ7 VSS DQM0 DQM1 VD D A0 A1 A2 ...col. address delay Last data in to burst stop Col. address to col. address delay Number of valid out... |
| Description |
64Mx64 SDRAM SODIMM based on 64Mx8, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD Data Sheet
|
| File Size |
79.34K /
12 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
Samsung Electronic
|
| Part No. |
M464S6453BK0
|
| OCR Text |
... 1 3 5 7 9 11 13 15 17 19 21 23 25 27 29 31 33 35 37 39 41 43 45 47 49 VSS DQ0 DQ1 DQ2 DQ3 VDD DQ4 DQ5 DQ6 DQ7 VSS DQM0 DQM1 VDD A0 A1 A2 VS...col. address delay Last data in to burst stop Col. address to col. address delay Number of valid out... |
| Description |
64Mx64 SDRAM SODIMM based on 64Mx8, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD Datasheet
|
| File Size |
142.67K /
10 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
INTEGRATED SILICON SOLUTION INC
|
| Part No. |
IS41C8205A-50J
|
| OCR Text |
...umn address access time (t aa ) 25 30 ns fast page mode cycle time (t pc ) 20 25 ns read/write cycle time (t rc ) 85 104 ns product series o...col d out write: word (early write) l l l x row/col d in read-write l l h ll h row/col d out , d i... |
| Description |
2M X 8 FAST PAGE DRAM, 50 ns, PDSO28
|
| File Size |
104.62K /
17 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|