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Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
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| Part No. |
CY7C1034DV33-8BGXC
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| OCR Text |
24) static ram cy7c1034dv33 cypress semiconductor corporation ? 198 champion court ? san jose , ca 95134-1709 ? 408-943-2600 document #: 001...2v for pulse durations of less than 20 ns. 3. tested initially and after any design or proce ss chan... |
| Description |
6-Mbit (256K X 24) Static RAM 256K X 24 STANDARD SRAM, 8 ns, PBGA119
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| File Size |
284.08K /
8 Page |
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Electronic Theatre Controls, Inc.
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| Part No. |
STK16C88-S35 STK16C88-S45I STK16C88-S35I STK16C88-W45 STK16C88-W35
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| OCR Text |
... 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 a 10 e dq 7 dq 6 dq 5 dq 4 dq 3 28 - 600 pdip 28 - 350 soic* *see order info p...2v) all others cycling, cmos levels i sb 1 e average v cc current (standby, cycling ttl input lev... |
| Description |
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):25A; Peak Non Repetitive Surge Current, Itsm:350A; Gate Trigger Current Max, Igt:35uA NVRAM (EEPROM Based) SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):35A; Peak Non Repetitive Surge Current, Itsm:500A; Gate Trigger Current Max, Igt:40uA DIODE TVS 13V 500W AXL UNI 5% NVRAM中(EEPROM的基础 SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):65A; Peak Non Repetitive Surge Current, Itsm:950A; Gate Trigger Current Max, Igt:50uA
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| File Size |
95.01K /
9 Page |
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AGILENT TECHNOLOGIES INC
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| Part No. |
ACPM-7831-TR1 ACPM-7831-BLK
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| OCR Text |
...voltage) (p out = 28.5 dbm) db 24 26 vcntl= 2.2v (p out = 13 dbm) db 25 vcntl= 2.2v (p out = -5 dbm) db 24 vcntl= 2.2v gain (dynamic cntl voltage) (p out = 28.5 dbm) db 24 26 vcntl= 2.2v (p out = 13 dbm) db 23 vcntl= 1.6v (p out = -5 ... |
| Description |
Amplifier. Other TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, DMA6
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| File Size |
502.97K /
24 Page |
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Infineon Technologies A...
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| Part No. |
BFP540
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| OCR Text |
... emitter grounded c cb - 0.14 0.24 pf collector emitter capacitance v ce = 2 v, f = 1 mhz, v be = 0 , base grounded c ce - 0.33 - em...2v 3v 4v transition frequency f t = ? ( i c ) f = 1ghz v ce = parameter in v 0 10 20 30 40 50 60... |
| Description |
Low Noise Silicon Bipolar RF Transistor
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| File Size |
568.24K /
10 Page |
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it Online |
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