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  20-520mhz Datasheet PDF File

For 20-520mhz Found Datasheets File :: 373    Search Time::4.36ms    
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    RD02MUS1B11

Mitsubishi Electric Semiconductor
Mitsubishi Electric Sem...
Part No. RD02MUS1B11
OCR Text ... to source voltage vds =0v +/ - 20 v pch channel dissipation tc=25 c 21.9 w pin input power zg=zl=50 ? 0.1 w id drain current - 1.5 a tch j...520mhz,idq=200ma,zg=50 ? load vswr=20:1(all phase) no destroy - note: above parameters, ratings, lim...
Description RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W

File Size 425.78K  /  9 Page

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    RD02MUS111

Mitsubishi Electric Semiconductor
Mitsubishi Electric Sem...
Part No. RD02MUS111
OCR Text ... to source voltage vds =0v +/ - 20 v pch channel dissipation tc=25 c 21.9 w pin input power zg=zl=50 ? 0.1 w id drain current - 1.5 a tch j...520mhz,idq=200ma,zg=50 ? load v swr=20:1(all phase) no destroy - note: above parameters, ratings, li...
Description RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W

File Size 412.30K  /  10 Page

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    RD01MUS111

Mitsubishi Electric Semiconductor
Mitsubishi Electric Sem...
Part No. RD01MUS111
OCR Text ...istics 0 2 4 6 8 10 12 14 16 18 20 0 5 10 15 20 vds(v) c i s s ( p f ) ta=+25c f=1mhz vds vs. coss characteristics 0 2 4 6 8 10 12 14 16 18 ...520mhz,1w publication date : oct 2011 3 typical characteristics vdd-po characteristics 0.0 0.5 1.0 ...
Description RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W

File Size 388.80K  /  7 Page

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    RA60H4452M1 RA60H4452M1-101 RA60H4452M108

Mitsubishi Electric Semiconductor
Part No. RA60H4452M1 RA60H4452M1-101 RA60H4452M108
OCR Text ...ut=60W (VGG control), Load VSWR=20:1 MIN 440 60 40 TYP MAX 520 UNIT MHz W % Harmonic -35 3:1 5 6 1 No parasitic oscillation No degradation or destroy dBc -- mA mA -- -- Input VSWR Gate Current Leakage Current Stab...
Description RF MOSFET MODULE 440-520MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO

File Size 167.94K  /  9 Page

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    RD15HVF1 RD15HVF108

Mitsubishi Electric Semiconductor
Part No. RD15HVF1 RD15HVF108
OCR Text ... junction to case RATINGS 30 +/-20 48 1.5(Note2) 4 150 -40 to +150 2.6 Note 1: Above parameters are guaranteed independently. Note 2: Ove...520MHz,Idq=0.5A VDD=15.2V,Po=15W(PinControl) f=175MHz,Idq=0.5A,Zg=50 Load VSWR=20:1(All Phase) VDD=1...
Description RF POWER MOS FET Silicon MOSFET Power Transistor, 175MHz520MHz,15W

File Size 360.81K  /  9 Page

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    RA30H4552M108 RA30H4552M1-101 RA30H4552M1

Mitsubishi Electric Semiconductor
Part No. RA30H4552M108 RA30H4552M1-101 RA30H4552M1
OCR Text ...ut=30W (VGG control), Load VSWR=20:1 MIN 450 30 42 TYP MAX 520 UNIT MHz W % Harmonic -40 3:1 1 1 No parasitic oscillation No degradation or destroy dBc -- mA mA -- -- Input VSWR Gate Current Leakage Current Stabil...
Description RF MOSFET MODULE 450-520MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO

File Size 150.42K  /  9 Page

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    RD30HUF1 RD30HUF106

Mitsubishi Electric Semicon...
Mitsubishi Electric Semiconductor
Part No. RD30HUF1 RD30HUF106
OCR Text ... junction to case RATINGS 30 +/-20 75 7.5 7 175 -40 to +175 2.0 UNIT V V W W A C C C/W Note 1: Above parameters are guaranteed independe...520MHz,VDD=12.5V Pin=3W,Idq=1.0A VDD=15.2V,Po=30W(PinControl) f=520MHz,Idq=1.0A,Zg=50 Load VSWR=20:1...
Description Silicon MOSFET Power Transistor,520MHz,30W

File Size 394.17K  /  7 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. S1M8821X01-R0T0 S1M8822X01-R0T0
OCR Text ...2/23 is now available in a 20-tssop/24-qfn package. features  high operating frequency dual synthesizer ? s1m8821 : 0.1 to 1.2ghz (rf)/ 45 to 520mhz (if) ? s1m8822 : 0.2 to 2.0ghz (rf)/ 45 to 520mhz (if) ? s1m8823 : 0.5 to 2.5ghz (rf)...
Description INTERGER RF/IF DUAL PLL
PLL FREQUENCY SYNTHESIZER, 2000 MHz, PDSO20

File Size 304.33K  /  22 Page

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    RA55H4452M-101 RA55H4452M10

Mitsubishi Electric Semiconductor
Part No. RA55H4452M-101 RA55H4452M10
OCR Text ...d =15.2v, p in =50mw, load vswr=20:1 p out =55w (v gg control)@440-490mhz p out =45w (v gg control)@491-520mhz no degradation or destroy ? note. all parameters, conditions, ratings, and limits are subject to change without notice....
Description 440-520MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO

File Size 95.06K  /  9 Page

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    RA55H4452M-101

Mitsubishi Electric Semiconductor
Part No. RA55H4452M-101
OCR Text ...d =15.2v, p in =50mw, load vswr=20:1 p out =55w (v gg control)@440-490mhz p out =45w (v gg control)@491-520mhz no degradation or destroy ? note. all parameters, conditions, ratings, and limits are subject to change without notice....
Description RF MOSFET MODULE 440-520MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO

File Size 106.00K  /  8 Page

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For 20-520mhz Found Datasheets File :: 373    Search Time::4.36ms    
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