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2-micron Datasheet PDF File

For 2-micron Found Datasheets File :: 6104 Search Time::1.406ms
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				INTERSIL[Intersil Corporation]
Part No.	ACS541D ACS541HMSR ACS541K ACS541MS 5962F9671001VRC 5962F9671001VXC FN4085
OCR Text	... OE1 A0 A1 A2 A3 A4 A5 A6 A7 1 2 3 4 5 6 7 8 9 20 VCC 19 OE2 18 Y0 17 Y1 16 Y2 15 Y3 14 Y4 13 Y5 12 Y6 11 Y7 Features * Devices QML Qua...Micron Radiation Hardened SOS CMOS * Total Dose . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Description	Buffer/Line Driver, Octal, Tri-State, Rad-Hard, Advanced Logic, CMOS Radiation Hardened Octal Buffer/ Line Driver Three-State From old datasheet system
File Size	232.09K / 3 Page	View it Online	Download Datasheet

				MACOM[Tyco Electronics]
Part No.	AM42-0007 AMPLIFIER
OCR Text	2.0W 14.0 - 14.5 GHz Features * * * * * * * High Linear Gain: 22 dB Typ. High Saturated Output Power: +33 dBm Typ. High Power Added Effi...micron GaAs MESFET process. The process features full passivation for increased performance and reli...
Description	GaAs MMIC Power Amplifier W 14.014.5 GHz GaAs MMIC VSAT Power Amplifier 2.0W 14.0 - 14.5 GHz
File Size	38.77K / 3 Page	View it Online	Download Datasheet

				MACOM[Tyco Electronics]
Part No.	AM42-0039 CR-15
OCR Text	...d) 1. Dimensions are in inches. 2. Tolerance: .XXX = 0.005 .XX = 0.010 Ordering Information Part Number AM42-0039 Package Ceramic Bolt Down Package Electrical Specifications: TA = +25C, VDD = +9V, VGG adjusted for IDD = 1050 mA, Fr...
Description	GaAs MMIC VSAT Power Amplifier2W6.40-7.025 GHz GaAs MMIC VSAT Power Amplifier/ 2W 6.40 - 7.025 GHz GaAs MMIC VSAT Power Amplifier, 2W 6.40 - 7.025 GHz
File Size	40.26K / 4 Page	View it Online	Download Datasheet

				MACOM[Tyco Electronics]
Part No.	AM42-0040
OCR Text	...d) 1. Dimensions are in inches. 2. Tolerance: .XXX = 0.005 .XX = 0.010 Ordering Information Part Number AM42-0040 Package Ceramic Bolt Down Package Electrical Specifications: TA = +25C, VDD = +9V, VGG adjusted for IDD = 1050 mA, Fr...
Description	GaAs MMIC VSAT Power Amplifier/ 2W 5.9 - 6.4 GHz GaAs MMIC VSAT Power Amplifier, 2W 5.9 - 6.4 GHz
File Size	40.05K / 4 Page	View it Online	Download Datasheet

				MACOM[Tyco Electronics] MA-Com
Part No.	AM50-0006 AM50-0006PCS AM50-0006PDC AM50-0006TR AM500006V2 AM500006 AM50-0006V2
OCR Text	2,9 0,2 .075 .008 1,90 0,2 PIN # 1 V2.00 Low Noise Figure: 1.6 dB High Input IP3: -6 dBm at 3 V, 6.5 mA bias High Gain: 18 dB Single Sup...micron gate length GaAs process. The process features full passivation for increased performance rel...
Description	1400-2000 MHz, low noise amplifier Circular Connector; No. of Contacts:128; Series:MS27505; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:25; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle RoHS Compliant: No Low Noise Amplifier 1400 - 2000 MHz 1400-1520 MHz, low noise amplifier
File Size	354.04K / 7 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-10100 ATF-10100-GP3
OCR Text	...ical at 4 GHz * Low Bias: VDS = 2 V, IDS = 25 mA * High Associated Gain: 14.0 dB Typical at 4 GHz * High Output Power: 21.0 dBm Typical P1 d...micron gate length interconnects between drain fingers. Total gate periphery is 500 microns. Proven ...
Description	0.5-12 GHz Low Noise Gallium Arsenide FET
File Size	46.17K / 4 Page	View it Online	Download Datasheet

				HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	ATF-10136 ATF-10136-STR ATF-10136-TR1 ATF10136
OCR Text	...ical at 4 GHz * Low Bias: VDS = 2 V, IDS = 20 mA * High Associated Gain: 13.0 dB Typical at 4 GHz * High Output Power: 20.0 dBm Typical P1 d...micron gate length using airbridge interconnects between drain fingers. Total gate periphery is 500 ...
Description	ER 3C 3#16 PIN RECP BOX 0.5-12 GHz Low Noise Gallium Arsenide FET
File Size	41.86K / 3 Page	View it Online	Download Datasheet

				HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	ATF-10236 ATF-10236-STR ATF-10236-TR1 ATF10236
OCR Text	...ical at 4 GHz * Low Bias: VDS = 2 V, IDS = 20 mA * High Associated Gain: 13.0 dB Typical at 4 GHz * High Output Power: 20.0 dBm Typical P1dB...micron gate length using airbridge interconnects between drain fingers. Total gate periphery is 500 ...
Description	ER 2C 2#16S PIN RECP BOX 0.5?12 GHz Low Noise Gallium Arsenide FET 0.5-12 GHz Low Noise Gallium Arsenide FET 0.512 GHz Low Noise Gallium Arsenide FET
File Size	42.09K / 3 Page	View it Online	Download Datasheet

				Agilent(Hewlett-Packard) Agilent (Hewlett-Packard)
Part No.	ATF-10736 ATF-10736-STR ATF-10736-TR1 ATF-10736-TRI ATF10736
OCR Text	...ical at 4 GHz * Low Bias: VDS = 2 V, IDS = 25 mA * High Output Power: 20.0 dBm typical P 1 dB at 4 GHz * Low Noise Figure: 1.2 dB Typical at...micron gate length using airbridge interconcnects between drain fingers. Total gate periphery is 500...
Description	0.5-12 GHz General Purpose Gallium Arsenide FET 0.5?12 GHz General Purpose Gallium Arsenide FET 0.512 GHz General Purpose Gallium Arsenide FET
File Size	44.24K / 4 Page	View it Online	Download Datasheet

				HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	ATF-13100 ATF-13100-GP3
OCR Text	2-18 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13100 Features * Low Noise Figure: 1.1 dB Typical at 12 GHz * High Associate...micron gate length with a total gate periphery of 250 microns. Proven gold based metallization syste...
Description	2-18 GHz Low Noise Gallium Arsenide FET(2-18 GHz 浣??澹扮???? FET) 2-18 GHz Low Noise Gallium Arsenide FET(2-18 GHz 低噪声砷化镓 FET) 2-18 GHz的低噪声砷化镓场效应管（2-18 GHz的低噪声砷化镓场效应管）
File Size	38.39K / 3 Page	View it Online	Download Datasheet

For 2-micron Found Datasheets File :: 6104 Search Time::1.406ms
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