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  1800a Datasheet PDF File

For 1800a Found Datasheets File :: 123    Search Time::1.125ms    
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    2MBI900VXA-120P-50

Fuji Electric
Part No. 2MBI900VXA-120P-50
OCR Text ... er volt age: v ce [ v] ic=1800a ic=900a ic=450a 0 3000 6000 9000 gate charge: qg [nc] c olle ct or-em i tt er v olt age: v ce [ 200v/ div ] gat e-em i tt er v olt age : v ge [ 5v/ div ] v ce v ge 15v v ge =20v 12v 2 3 igbt...
Description IGBT MODULE (V series) 1200V / 900A / 2 in one package

File Size 374.25K  /  7 Page

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    Microsemi, Corp.
Part No. APTGT50H60T3G
OCR Text ...i f = 50a v r = 300v di/dt =1800a/s t j = 150c 1.2 mj aptgt50h60t3g aptgt50h60t3g ? rev 1, june, 2006 3 - 5 www . microsemi . com temperature sensor ntc (see application note apt0406 on www.microsemi.com fo...
Description Full - Bridge Trench Field Stop IGBT Power Module 80 A, 600 V, N-CHANNEL IGBT

File Size 261.43K  /  5 Page

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    Advanced Power Technology, Ltd.
Part No. APTGT50DDA60T3
OCR Text ...i f = 50a v r = 300v di/dt =1800a/s t j = 150c 5.4 c aptgt50dda60t3 aptgt50dda60t3 ? rev 0, may, 2005 apt website ? http:/ / www.advancedpower.com 3 - 5 temperature sensor ntc (see application note apt0406...
Description Dual Boost chopper Trench Field Stop IGBT Power Module 双升压斩波器戴场站IGBT功率模块

File Size 283.71K  /  5 Page

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    RM1800HE-34S

Mitsubishi Electric Semiconductor
Part No. RM1800HE-34S
OCR Text .................................. 1800a v rrm ...................................................... 1700v insulated type 1-element in a pack aisic baseplate application tr action drives, high reliability converters / inverters, dc choppe...
Description HIGH POWER SWITCHING USE

File Size 117.03K  /  4 Page

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    DFM900FXS12-A000

Dynex Semiconductor
Part No. DFM900FXS12-A000
OCR Text ...onnection required for a single 1800a diode fig. 1 circuit configuration outline type code: f (see fig. 7 for further information) fig. 2 package 3(a) 4(a) 2(k) 1(k) df m 9 00fxs12 - a000 2 /6 ...
Description Fast Recovery Diode Module

File Size 219.26K  /  6 Page

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    APTGT50DH60T1G

Microsemi Corporation
Part No. APTGT50DH60T1G
OCR Text ...i f = 50a v r = 300v di/dt =1800a/s t j = 150c 1.2 mj cr1 & cr4 are igbt protection diodes only aptgt50dh60t1g aptgt50dh60t1g ? rev 0 april, 2009 www.microsemi.com 3 ? 5 thermal and package characteristics symbo...
Description Asymmetrical - Bridge Trench Field Stop IGBT Power Module

File Size 203.46K  /  5 Page

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    APTGT30A60T1G

Microsemi Corporation
Part No. APTGT30A60T1G
OCR Text ...i f = 30a v r = 300v di/dt =1800a/s t j = 150c 0.75 mj aptgt30a60t1g aptgt30a60t1g ? rev 0 august, 2007 www.microsemi.com 3 ? 5 thermal and package characteristics symbol characteristic min typ max unit ...
Description Phase leg Trench Field Stop IGBT? Power Module

File Size 271.28K  /  5 Page

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    APTGT30H60T1G

Microsemi Corporation
Part No. APTGT30H60T1G
OCR Text ...i f = 30a v r = 300v di/dt =1800a/s t j = 150c 0.75 mj aptgt30h60t1g aptgt30h60t1g ? rev 0 august, 2007 www.microsemi.com 3 ? 5 thermal and package characteristics symbol characteristic min typ max unit i...
Description Full - Bridge Trench Field Stop IGBT? Power Module

File Size 273.37K  /  5 Page

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    APTGT50H60T1G

Microsemi Corporation
Part No. APTGT50H60T1G
OCR Text ...i f = 50a v r = 300v di/dt =1800a/s t j = 150c 1.2 mj aptgt50h60t1g aptgt50h60t1g ? rev 0 august, 2007 www.microsemi.com 3 ? 5 thermal and package characteristics symbol characteristic min typ max unit ig...
Description Full - Bridge Trench Field Stop IGBT? Power Module

File Size 273.85K  /  5 Page

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    DSF20545SF04

Dynex Semiconductor
Part No. DSF20545SF04
OCR Text ...v rrm , t case = 150 o c-ma at 1800a peak, t case = 25 o c-2.1v conditions max. i f = 1000a, di rr /dt = 100a/ s t case = 150 o c, v r = 100v characteristics 4/7 www.dynexsemi.com dsf20545sf curves fig.2 maximum (limit) forward char...
Description Fast Recovery Diode

File Size 85.42K  /  7 Page

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For 1800a Found Datasheets File :: 123    Search Time::1.125ms    
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