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SANYO
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| Part No. |
CPH5808
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| OCR Text |
...(on)2 i d =0.5a, v gs =2.5v 130 180 m w input capacitance ciss v ds =10v, f=1mhz 190 pf output capacitance coss v ds =10v, f=1mhz 40 pf reverse transfer capacitance crss v ds =10v, f=1mhz 25 pf turn-on delay time t d (on) see specified test... |
| Description |
Nch SBD
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| File Size |
45.13K /
6 Page |
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PHILIPS[Philips Semiconductors] NXP Semiconductors N.V.
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| Part No. |
PHX18NQ20T PHX18NQ20T-01 PHX18NQ20T127
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| OCR Text |
...- - 130 -
Max 200 8.2 30 150 180 450
Unit V A W C m m
VGS = 10 V; ID = 8 A; Tj = 150 C
6. Limiting values
Table 3: Limiting val...channel FET
120
03aa11
03aa19
120
I
Pder 100 (%) 80
der 100 (%)
80
60
60... |
| Description |
From old datasheet system 8.2 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET PLASTIC, TO-220F, 3 PIN N-channel enhancement mode field-effect transistor 8.2 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
106.76K /
15 Page |
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SANYO
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| Part No. |
CPH5807
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| OCR Text |
...(on)1 i d = --0.8a, v gs = --4v 180 235 m w r ds (on)2 i d = --0.4a, v gs = --2.5v 240 340 m w input capacitance ciss v ds = --10v, f=1mhz 290 pf output capacitance coss v ds = --10v, f=1mhz 40 pf reverse transfer capacitance crss v ds = --... |
| Description |
Pch SBD
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| File Size |
45.36K /
6 Page |
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SANYO
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| Part No. |
CPH5803
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| OCR Text |
...ms dc operation 1ms 10ms <10 s 180 360 q 360 (2) (4) (3) (1) 1.0 10 2 2 3 100 1.0 10 2 3 5 7 2 3 5 7 357 2 c -- v r f=1mhz 0 100 10 1.0 0.1 0.01 5 7 3 2 5 7 3 2 5 7 3 2 5 7 3 2 15 510 i r -- v r 0 0 0.2 0.4 0.6 0.8 0.8 0.7 0.6 0.4... |
| Description |
Nch SBD
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| File Size |
40.48K /
5 Page |
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NXP Semiconductors N.V.
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| Part No. |
BUK9E04-30B
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| OCR Text |
... ?6 min typ max 03no67 0 60 120 180 0204060 i d (a) g fs (s)
buk9e04-30b all information provided in this document is subject to legal d...channel trenchmos logic level fet fig 9. transfer characteristics: drain current as a function of g... |
| Description |
N-channel TrenchMOS logic level FET N沟道TrenchMOS逻辑电平场效应管
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| File Size |
169.54K /
13 Page |
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MAXIM[Maxim Integrated Products]
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| Part No. |
MAX5066EUI MAX5066 MAX5066AUI
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| OCR Text |
... of the MAX5066 is designed for 180 operation. A mode pin allows for a dual-output supply or connecting two phases together for a single-output, high-current supply. Each output channel of the MAX5066 drives n-channel MOSFETs and is capable... |
| Description |
Configurable, Single-/Dual-Output, Synchronous Buck Controller for High-Current Applications
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| File Size |
359.41K /
22 Page |
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Philips
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| Part No. |
PHN103T
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| OCR Text |
...- - - - - 12 24 3.3 7.4 770 265 180 8 10 18 24 20 44 - 40 - - - - - - - 35 - - 150 S nC nC nC pF pF pF ns ns ns ns ns ns - - 30 - 50 85 m m ...channel enhancement mode field-effect transistor
Table 5: Characteristics...continued Tj = 25 C u... |
| Description |
N-channel enhancement mode field-effect transistor
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| File Size |
156.60K /
13 Page |
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NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
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| Part No. |
PHX8NQ11T PHX8NQ11T127
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| OCR Text |
...ot 27.7 W s ID 7.5 A s RDSon 180 m.
2. Pinning information
Table 1: Pin 1 2 3 mb Pinning - SOT186A (TO-220F) simplified outline and s...channel TrenchMOSTM standard level FET
3. Ordering information
Table 2: Ordering information Pac... |
| Description |
N-channel TrenchMOS-TM standard level FET 7.5 A, 110 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 7.5 A, 110 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB PLASTIC, TO-220F, FULL PACK-3 N-channel Trenchmos (tm) standard level FET
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| File Size |
82.05K /
12 Page |
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