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				International Rectifier
Part No.	IRLML2803GPBF
OCR Text	... VDSS = 30V G S RDS(on) = 0.25 Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techn...57A 0.75A BOTTOM 0.90A TOP RG VGS 20V D.U.T IAS tp + V - DD A 0.01 Fig 12a. Unc...
Description	HEXFET Power MOSFET
File Size	244.93K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRFR3706PBF IRFU3706PBF IRFR3706TRPBF
OCR Text	... Max. 20 12 75 53 280 88 44 0.59 -55 to + 175 Units V V A W W mW/C C Thermal Resistance Parameter RJC RJA RJA Junction-to-Case ...57A 35 ID = 28A 12 nC VDS = 10V 8.3 VGS = 4.5V 24 VGS = 0V, VDS = 10V --- --- VDD = 10V ns --- ID ...
Description	SMPS MOSFET
File Size	218.92K / 11 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FDB150N10
OCR Text	...gs 100 20 57 40 228 132 7.5 110 0.88 -55 to +150 300 Units V V A A A mJ V/ns W W/oC o o Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds C C Thermal Characteristi...
Description	N-Channel PowerTrench垄莽 MOSFET 100V, 57A, 15m楼?
File Size	485.06K / 8 Page	View it Online	Download Datasheet

				Silikron Semiconductor Co.,LTD.
Part No.	SSF4006
OCR Text	... (T0-220) ID =160A BV=40V Rdson=0.005 Absolute Maximum Ratings Parameter ID@Tc=25 C ID@Tc=100C IDM PD@TC=25C VGS EAS EAR dv/dt TJ TSTG Th...57A Pulse width300S, duty cycle1.5% ; RG = 25 Starting TJ = 25C (c)Silikron Semiconductor CO....
Description	Advanced trench process technology
File Size	238.15K / 4 Page	View it Online	Download Datasheet

				Silicon Standard Corp.
Part No.	SSM9408GH
OCR Text	... Rating 30 20 57 41 228 53.6 0.36 -55 to 175 -55 to 175 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range THERMAL DATA Symbol Rthj-c Rthj-a Para...
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
File Size	164.01K / 5 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF3704LPBF IRF3704PBF IRF3704SPBF IRF3704STRLPBF IRF3704STRRPBF IRF3704SPPF
OCR Text	... Max. 20 20 77 64 308 87 61 0.59 -55 to + 175 Units V V A W W mW/C C Thermal Resistance Parameter RJC RCS RJA RJA Junction-to-C...57A --- ID = 28.4A --- nC VDS = 10V --- VGS = 4.5V 24 VGS = 0V, VDS = 10V --- VDD = 10V --- ID = 28...
Description	75 A, 20 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET HEXFET Power MOSFET High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use
File Size	263.06K / 11 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG4PH50SPBF
OCR Text	... 20 270 200 80 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbfin (1.1Nm) Units V A V mJ W C Thermal Resistance Paramete...57A See Fig.2, 5 V -- IC = 33A , TJ = 150C 6.0 VCE = VGE, IC = 250A -- mV/C VCE = VGE, IC = 250A -- ...
Description	INSULATED GATE BIPOLAR TRANSISTOR
File Size	221.69K / 9 Page	View it Online	Download Datasheet

				Silikron Semiconductor Co.,LTD.
Part No.	SSF7509
OCR Text	...n=8mohm Max. 80 72 320 165 2.0 20 31 500 TBD -55 to +150 Units A W W/ C V v/ns mJ Continuous drain current,VGS@10V Continuous drain...57A, VDD = 47V Pulse width300S; duty cycle1.5% RG = 25Starting TJ = 25C EAS test circuits: BVd...
Description	Power switching application
File Size	351.25K / 5 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	AUIRG4PH50S
OCR Text	... V mJ W C -55 to + 150 300 (0.063 in. (1.6mm) from case) 10 lbfin (1.1 Nm) Thermal Resistance Parameter RJC RCS RJA Wt Junction-t...57A See Fig.2, 5 V -- IC = 33A , TJ = 150C 6.0 VCE = VGE, IC = 250A -- mV/C VCE = VGE, IC = 250A -- ...
Description	INSULATED GATE BIPOLAR TRANSISTOR 57 A, 1200 V, N-CHANNEL IGBT, TO-247AC
File Size	230.57K / 11 Page	View it Online	Download Datasheet

				Sumida, Corp. SUMIDA CORPORATION.
Part No.	CDRH2D23HPNP-3R3N CDRH2D23HPNP-2R2N CDRH2D23HPNP-1R7N CDRH2D23HPNP-100N CDRH2D23HPNP-150N CDRH2D23HPNP-220N CDRH2D23HPNP-4R7NC
OCR Text	...ge: 1.72.2H Rated current range:0.57a-2.05A In addition to the standard versions of inductors shown here, custom inductors are available to meet your exact requirements. Feature Magnetically shielded construction. Ideally used in Mobil...
Description	1 ELEMENT, 4.7 uH, GENERAL PURPOSE INDUCTOR, SMD Power Inductor 功率电感
File Size	295.53K / 2 Page	View it Online	Download Datasheet

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