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0.5-2ghz Datasheet PDF File

For 0.5-2ghz Found Datasheets File :: 1492 Search Time::1.532ms
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				Intersil, Corp. Intersil Corporation
Part No.	ISL3690 ISL3690IR ISL3690IR-TK
OCR Text	.... . . . . . . . . . . . . . . . 0 to 74dB * RX I/Q MTPR, PAR=12, High Gain . . . . . . . . . . . . . -35dB Pinout ISL3690 (QFN) TOP VIEW...5 4 3 2 LNA_VCC 17 LNA_GND 18 LB_SHIELD 19 BB_OVLD LB_LNA_IN+ 20 LB_LNA_IN- 21 HB_SHIELD...
Description	Dual Band Direct Conversion Transceiver 双波段直接转换收发器 DIODE ZENER SINGLE 1000mW 7.5Vz 34mA-Izt 0.05 10uA-Ir 5Vr DO41-GLASS 5K/REEL
File Size	32.51K / 1 Page	View it Online	Download Datasheet

				Excelics Semiconductor, Inc. ETC List of Unclassifed Manufacturers
Part No.	EPA1200A
OCR Text	0.4 X 12,000 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENC...5 TYP 39.5 39.5 18.0 13.0 43 MAX UNIT dBm dB % Output Power at 1dB Compression f= 2GHz V...
Description	High Efficiency Heterojunction Power FET
File Size	26.76K / 2 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	MT4S100T
OCR Text	...TURES * * Low Noise Figure :NF=0.72dB (@f=2GHz) High Gain:\|S21e\| =17.0dB (@f=2GHz) 2 1.20.05 0.90.05 1.20.05 0.80.05 2 1 ...5 0 1 f=1GHz Ta=25 10 COLLECTOR CURRENT IC (mA) 100 \|S21e\| -I C 2 20 \|S21e\| -I C VCE=2V 2 ...
Description	UHF LOW NOISE AMPLIFIER APPLICATION
File Size	121.39K / 5 Page	View it Online	Download Datasheet

				NJRC[New Japan Radio]
Part No.	NJG1533KB2
OCR Text	...INE NJG1533KB2 +2.5~+6.5V 0.4dB typ. @f=1GHz, PIN=23dBm 0.5dB typ. @f=2GHz, PIN=23dBm 29dB typ. @f=2GHz, PIN=23dBm 25dBm max. @f=2GHz, VCTL=3.0V 8uA typ. @f=0.05~2.5GHz, PIN=23dBm FLP6-B2 (Package size: 2.0x2.1x0.75mm) nTRUTH TABLE...
Description	SPDT SWITCH GaAs MMIC
File Size	159.47K / 12 Page	View it Online	Download Datasheet

				Agilent(Hewlett-Packard... HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	ATF-33143- ATF33143 ATF-33143-BLK ATF-33143-TR1 ATF-33143-TR2
OCR Text	...ge Marking Specifications * 0.5 dB Noise Figure * 15 dB Associated Gain * 22 dBm Output Power at 1 dB Gain Compression * 33.5 dBm Output 3 Order Intercept rd SOURCE 3Px 1.9 GHz; 4V, 80 mA (Typ.) DRAIN SOURCE GATE N...
Description	Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package
File Size	145.67K / 14 Page	View it Online	Download Datasheet

				HP[Agilent(Hewlett-Packard)]
Part No.	ATF34143 ATF-34143-TR2 ATF-34143 ATF-34143-BLK ATF-34143-TR1
OCR Text	...ge Marking Specifications * 0.5 dB Noise Figure * 17.5 dB Associated Gain * 20 dBm Output Power at 1 dB Gain Compression * 31.5 dBm Output 3rd Order Intercept SOURCE 4Px 1.9 GHz; 4 V, 60 mA (Typ.) DRAIN SOURCE GATE No...
Description	Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package
File Size	149.64K / 15 Page	View it Online	Download Datasheet

				Electronic Theatre Controls, Inc. SIRENZA[SIRENZA MICRODEVICES] Stanford Microdevices List of Unclassifed Manufacturers
Part No.	SLX-2143 ELECTRONICTHEATRECONTROLSINC.-SLX-2143
OCR Text	...oise Figure (dB) 1.50 1.25 1.00 0.75 0.50 0.25 0.00 1.5 Product Features * * * * * 1.7 1.9 2.1 2.3 2.5 Very Low Noise Figure, 1.05dB High OIP3 = +35dBm at 2GHz Gain = 15dB, Low Gain Slope 50 Input/Output Match, Stable Single Suppl...
Description	1700-2200 MHz High Linearity Low Noise Amplifier Module
File Size	158.74K / 7 Page	View it Online	Download Datasheet

				Mitel Semiconductor MITEL[Mitel Networks Corporation]
Part No.	SP8855 SP8855E
OCR Text	...l Products IC Hanbook, HB2480-3.0 DS4239 - 3.0 March 1999 The SP8855E is one of a family of parallel load synthesisers containing all the...5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Description Input bus bit 10 Input bus bit 9 Input ...
Description	2.8GHz Parallel Load Professional Synthesiser MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:15A; On-Resistance, Rds(on):10mohm; Rds(on) Test
File Size	168.71K / 14 Page	View it Online	Download Datasheet

				Toshiba Corporation Toshiba Semiconductor
Part No.	TIM1011-2L
OCR Text	...N. TYP. MAX. UNIT 32.5 33.5 7.5 0.85 24 -45 0.85 1.1 1.1 80 dBm dB A % dBc A C f =10.7-11.7GHz add IM3 -42 VDS X IDS X Rth(c-c) ELECTRICAL CHARACTERISTICS ( Ta= 25C ) CHARACTERISTICS Transconductance Pinch-off Voltage S...
Description	MICROWAVE POWER GaAs FET From old datasheet system
File Size	142.06K / 5 Page	View it Online	Download Datasheet

				MAXIM - Dallas Semiconductor Maxim Integrated Products
Part No.	MAX2392EVK MAX2391EVKIT MAX2392EVKIT MAX2393EVKIT
OCR Text	0; 5/03 MAX2391/MAX2392/MAX2393 Evaluation Kits General Description The MAX2391/MAX2392/MAX2393 evaluation kits (EV kits) simplify the evaluation of the MAX2391/ MAX2392/MAX2393 WCDMA/TD-SCDMA/3GPP-TDD direct-downconversion receive ICs...
Description	Evaluation Kits for the MAX2391/MAX2392/MAX2393 MAX2391/MAX2392/MAX2393 Evaluation Kits
File Size	692.63K / 18 Page	View it Online	Download Datasheet

For 0.5-2ghz Found Datasheets File :: 1492 Search Time::1.532ms
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