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NXP Semiconductors N.V.
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| Part No. |
BUK652R1-30C
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| OCR Text |
... t j(init) = 25 c; unclamped --0.87j dynamic characteristics q gd gate-drain charge i d =25a; v ds =24v; v gs = 10 v; see figure 17 ; see...43m ? v gs =10v; i d =25a; t j = 175 c; see figure 15 ; see figure 13 --4.8m ? dynamic characteris... |
| Description |
N-channel TrenchMOS intermediate level FET 100 A, 30 V, 0.0021 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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| File Size |
185.35K /
16 Page |
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MOSA ELECTRONICS
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| Part No. |
MS6853TGTR MS6853TGU
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| OCR Text |
...5v btl, r l =4 ? , 1.9w at 5v, 0.83w at 3.3v, 500mw at 2.7v btl, r l =8 ? , 1.2w at 5v, 0.54w at 3.3v, 350mw at 2.7v se, r l =8 ? , 300mw...43m - w 2.7v electrical characteristics ta = 25c, v dd =2.7v, f=1khz, bw<30khz, unless otherw... |
| Description |
Mono 1.9W / Stereo 300mW Power Amplifier Low Voltage Operation, Shutdown Function
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| File Size |
601.96K /
14 Page |
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it Online |
Download Datasheet
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AOC2802
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| OCR Text |
... pw <300 s pulses, duty cycle 0.5% max -55 to 150 60 power dissipation note1 t a =25c c units parameter 6 absolute maximum ratings t a =25c unless otherwise noted 12 20 maximum a v v w source current (pulse) note2 gate-source voltage s... |
| Description |
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
350.78K /
5 Page |
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it Online |
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Price and Availability
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