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  0.363 Datasheet PDF File

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    AT-32063 AT-32063-BLK AT-32063-TR1

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. AT-32063 AT-32063-BLK AT-32063-TR1
OCR Text ...3 V Noise Figure; VEB = 1 V f = 0.9 GHz f = 0.9 GHz Units dB dB -- A A 50 Min. Typ. Max. 1.1[2] 12.5[2] 14.5[2] 270 0.2 1.5 1.4[2] Notes:...363/SC-70) 1.30 (0.051) REF. 2.20 (0.087) 2.00 (0.079) 1.35 (0.053) 1.15 (0.045) 0.650 BSC...
Description Low Current, High Performance NPN Silicon Bipolar Transistor
Low Current High Performance NPN Silicon Bipolar Transistor

File Size 74.71K  /  8 Page

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    CHUMH1PT

Chenmko Enterprise Co. Ltd.
Part No. CHUMH1PT
OCR Text ... SC-88/SOT-363 1.2~1.4 0.65 0.65 2.0~2.2 (4) 0.15~0.35 (3) 1.15~1.35 0.08~0.15 0.1 Min. 0.8~1.1 0~0.1 2.15~2.45 CIRCUIT 6 R1 R2 4 R2 1 R1 3 Dimensions in millimeters SC-88/SOT-363 LIMITING VALUES...
Description NPN Digital Silicon Transistor

File Size 66.29K  /  3 Page

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    CHUMH42PT

Chenmko Enterprise Co. Ltd.
Part No. CHUMH42PT
OCR Text ...363 (1) (6) 1.2~1.4 0.65 0.65 2.0~2.2 (4) 0.15~0.35 (3) 1.15~1.35 0.08~0.15 0.1 Min. 2.15~2.45 0.8~1.1 0~0.1 CIRC...363 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCC...
Description NPN Digital Silicon Transistor

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    AGILENT TECHNOLOGIES INC
Part No. HSMS-2808-BLK HSMS-2807-TR1 HSMS-2802-TR2G
OCR Text ...mmon anode #3 series #2 single #0 12 3 12 34 ring quad #7 12 34 bridge quad #8 12 34 12 3 12 3 12 3 package lead code identification, sot-323 (top view) package lead code identification, sot-363 (top view) common cathode f common anode e se...
Description SILICON, MIXER DIODE

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    CHUMH9PT

Chenmko Enterprise Co. Ltd.
Part No. CHUMH9PT
OCR Text ... SC-88/SOT-363 1.2~1.4 0.65 0.65 2.0~2.2 (4) 0.15~0.35 (3) 1.15~1.35 0.08~0.15 0.1 Min. 0.8~1.1 0~0.1 2.15~2.45 CIRCUIT 3 R1 R2 1 R2 4 R1 6 Dimensions in millimeters SC-88/SOT-363 LIMITING VALUES...
Description NPN Digital Silicon Transistor

File Size 65.88K  /  3 Page

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    BC856BDW1T1D BC857CDW1T1 BC858CDW1T1 BC856BDW1T1 BC857BDW1T1 BC858BDW1T1

ONSEMI[ON Semiconductor]
Part No. BC856BDW1T1D BC857CDW1T1 BC858CDW1T1 BC856BDW1T1 BC857BDW1T1 BC858BDW1T1
OCR Text ...O VCBO VEBO IC BC856 -65 -80 -5.0 -100 BC857 -45 -50 -5.0 -100 BC858 -30 -30 -5.0 -100 Unit V V V mAdc 1 2 3 http://onsemi.com (3) ...363/SC-88 CASE 419B Style 1 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation Per ...
Description ECONOLINE: RJ & RG - Dual Output from a Single Input Rail - 3kVDC & 4kVDC Isolation - Optional Continuous Short Circuit Protected - Custom Solutions Available - UL94V-0 Package Material - Efficiency to 84%
Dual General Purpose Transistors

File Size 106.36K  /  6 Page

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    MBT3904DW1T105 MBT3904DW2T1G

ON Semiconductor
Part No. MBT3904DW1T105 MBT3904DW2T1G
OCR Text ... hFE, 100-300 Low VCE(sat), 0.4 V Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7-inch/3,000 ...363 Shipping 3000 Units/Reel 3000 Units/Reel 3000 Units/Reel 3000 Units/Reel 1. Device mounted on...
Description Dual General Purpose Transistors

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    NUF2015W1

ON Semiconductor
Part No. NUF2015W1
OCR Text ... max nuf2015w1t2 5.25 5.6 6.8 8.0 ? 10 100 33 42 51 12 15 18 1.2 1.5 1.8 1. measured between pins 1, 3, 4, 6 and ground with pin 5 also grou...363 case 419b ? 02 issue w dim min nom max millimeters a 0.80 0.95 1.10 a1 0.00 0.05 0.10 a3 b 0.10 ...
Description USB Upstream Terminator with ESD Protection(带ESD保护的USB上游终端) 与上游终结者的USB ESD保护(带静电放电保护的的USB上游终端

File Size 132.97K  /  6 Page

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    NTJS3151P

ON Semiconductor
Part No. NTJS3151P
OCR Text ...c i d ? 2.7 a t a = 85 c ? 2.0 t 5 s t a = 25 c ? 3.3 power dissipation (note 1) steady state t a = 25 c p d 0.625 w pulsed drain...363 case 419b style 28 marking diagram & pin assignment http://onsemi.com see detailed ordering and ...
Description Trench Power MOSFET 12V, 3.3A, Single P Channel, ESD Protected SC88(12V, 3.3A, 功率MOSFET) 12V的功率MOSFET.3A,单P通道,ESD保护SC8812V的,3.3A,功率MOSFET的)

File Size 126.79K  /  6 Page

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