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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDY100PZ
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| OCR Text |
...te 2)
Test Conditions
VGS = 0 V, ID = - 250 A
Min
- 20
Typ Max Units
V 15 -3 10 mV/C A A V mV/C
Off Characteristics
ID = -...175A RDS(ON), ON-RESISTANCE (OHM) 1.75 1.5 1.25 1 0.75 0.5 0.25 TA = 25oC
1.6 RDS(ON), NORMALIZED... |
| Description |
Single P-Channel (-2.5V) Specified PowerTrench MOSFET
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| File Size |
170.93K /
6 Page |
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POWER-ONE[Power-One]
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| Part No. |
FXP6000-48-S FXP6000 FXP6000-32-S
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| OCR Text |
... 45.6V to 50.4V
175A 125A
0.2% 0.15%
0.2% 0.2%
31.93V to 32.07V 47.90V to 48.10V
NOTES: 1) With Remote Sense connected. 2) User-selectable input voltage ranges.
Input Specifications
PARAMETER DESCRIPTION/CONDITIONS MIN NO... |
| Description |
Distributed Power Front-End
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| File Size |
355.76K /
8 Page |
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HITACHI[Hitachi Semiconductor]
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| Part No. |
HSS81
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| OCR Text |
...-- -- Typ -- -- -- 1.5 -- Max 1.0 0.2 100 -- 100 pF ns Unit V A Test Condition I F = 100mA VR = 150V VR = 200V VR = 0V, f = 1MHz I F = IR = 30mA, Irr = 3mA, R L = 100
2
HSS81
10
-1
Forward current I F (A)
10
-3
10
-4
... |
| Description |
Silicon Epitaxial Planar Diode for High Voltage Switching
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| File Size |
25.63K /
6 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRF2805SPBF IRF2805LPBF
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| OCR Text |
...1220 See Fig.12a, 12b, 15, 16 2.0 -55 to + 175 300 (1.6mm from case )
Units
A W W/C V mJ A mJ V/ns C
Thermal Resistance
Parameter
R...175A
RDS(on) , Drain-to-Source On Resistance
T J = 175C
2.0
100
(Normalized)
1.5
... |
| Description |
HEXFET Power MOSFET
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| File Size |
303.28K /
11 Page |
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IRF[International Rectifier]
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| Part No. |
IRF2805
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| OCR Text |
...unction-to-Ambient
Typ.
--- 0.50 ---
Max.
0.45 --- 62
Units
C/W
HEXFET(R) is a registered trademark of International Rectifie...175A
LIMITED BY PACKAGE
150
2.5
RDS(on) , Drain-to-Source On Resistance
120
2.0
ID ... |
| Description |
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
AUTOMOTIVE MOSFET
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| File Size |
148.82K /
9 Page |
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it Online |
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SANYO
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| Part No. |
2SC6023
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| OCR Text |
...21e22
Conditions VCB=5V, IE=0 VEB=1V, IC=0 VCE=3V, IC=15mA VCE=1V, IC=5mA VCE=3V, IC=15mA VCB=1V, f=1MHz VCE=1V, IC=5mA, f=2GHz VCE=3V, ...175A 150A 125A
0.2
0.3
0.15
40 35
IC -- VBE
30
Collector Current, IC -- mA
C... |
| Description |
NPN Epitaxial Planar Silicon Transistor UHF to C Band Low-Noise Amplifier and OSC Applications
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| File Size |
63.43K /
16 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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| Part No. |
ISL6742AAZA-T ISL6742 ISL6742AAZA
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| OCR Text |
...SCILLATOR PWM COMPARATOR VREF + 0.33 VERR 80mV VREF 1 mA
RTD
SS
SOFTSTART CONTROL
+ -
0.6V FB
FN9183.1 July 25, 2005
Typical Application - Telecom Primary Side Control Half-Bridge Converter with Synchronous Rectificatio... |
| Description |
Advanced Double-Ended PWM Controller
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| File Size |
409.04K /
18 Page |
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it Online |
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NTE[NTE Electronics]
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| Part No. |
NTE5540 NTE5539
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| OCR Text |
...VGT . . . . . . . . . . . . . . 0.2V Maximum DC Holding Current (Gate Open, Initial On-State Current = 400mA(DC)), IH . . . . 60mA Peak Gate...175A/s Gate Controlled Turn-On Time (Gate Pulse = 150mA, Min Width = 15s, tr 0.1s), tgt . . . 2.5s ... |
| Description |
Silicon Controlled Rectifier (SCR) 55 Amps
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| File Size |
18.61K /
2 Page |
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it Online |
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Price and Availability
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