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  .3.1a Datasheet PDF File

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    2SD717

Wing Shing Computer Components
Part No. 2SD717
OCR Text ... Tmb 25 IC = 4.0A; IB=0.4A IF = 3.5A IC=4A,IB1=-IB2=0.4A,VCC=30V 1.5 0.4 LIMITING VALUES SYMBOL VCESM VCEO VEBO IC IB Ptot Tstg Tj...1A; VCE = 5V IC = 1A; VCE = 12V VCB = 10V IC=4A,IB1=-IB2=0.4A,VCC=30V IC=4A,IB1=-IB2=0.4A,VCC=30V IC...
Description Silicon Epitaxial Planar Transistor(GENERAL DESCRIPTION)

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    2SD789

HITACHI[Hitachi Semiconductor]
Part No. 2SD789
OCR Text ...2MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SD789 Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to em...1A Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cu...
Description Silicon NPN Transistor
Silicon NPN Epitaxial

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    2SD850

Wing Shing Computer Components
Part No. 2SD850
OCR Text ...colour television receivers TO-3 QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf PARAMETER Collector-emitte...1A,VCE=10V VCB = 10V IC=3A,IB(end)=0.8A,VCC=105V IC=3A,IB(end)=0.8A,VCC=105V TYP 8 3 90 MAX 1...
Description Silicon Diffused Power Transistor(GENERAL DESCRIPTION)

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    2SD874 2SD874A

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PANASONIC[Panasonic Semiconductor]
Part No. 2SD874 2SD874A
OCR Text ... 1.5 1 1 150 -55 ~ +150 Unit V 3 1.0-0.2 +0.1 0.40.08 0.50.08 1.50.1 3.00.15 2 1 4.0-0.20 0.40.04 emitter voltage 2SD874A...1A*2 IC = 500mA, IB = 50mA*2 IC = 500mA, IB = 50mA*2 VCB = 10V, IE = -50mA, f = 200MHz VCB = 10V, IE...
Description Silicon NPN epitaxial planer type(For low-frequency power amplification)

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    2SD882S UTC2SD882S

Unisonic Technologies
Part No. 2SD882S UTC2SD882S
OCR Text ... TO-92 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25C ,unless otherwise specified ) PARAMETERS Collector-base voltage...1A Ic=2A,IB=0.2A Ic=2A,IB=0.2A VCE=5V,Ic=0.1A VCB=10V,IE=0,f=1MHz MIN TYP MAX 1000 1000 ...
Description NPN EPITAXIAL SILICON TRANSISTOR

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    2SD965

Panasonic, Corp.
Panasonic Semiconductor
Part No. 2SD965
OCR Text ...2.30.2 1:Emitter 2:Collector 3:Base JEDEC:TO-92 EIAJ:SC-43A s Electrical Characteristics Parameter Collector cutoff current Emitter c...1A*2 VCB = 6V, IE = -50mA, f = 200MHz VCB = 20V, IE = 0, f = 1MHz min typ max 0.1 1.0 0.1 ...
Description Silicon NPN epitaxial planer type(For low-frequency power amplification) 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92

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    2SD966

PANASONIC[Panasonic Semiconductor]
Part No. 2SD966
OCR Text ...aximum Ratings 0.7-0.2 +0.3 Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high effic...1A*2 VCB = 6V, IE = -50mA, f = 200MHz VCB = 20V, IE = 0, f = 1MHz min 3.2 1 2 3 1:...
Description Silicon NPN epitaxial planer type(For low-frequency power amplification)

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    2SD973A 2SD973 2SD0973

Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
Part No. 2SD973A 2SD973 2SD0973
OCR Text ... 2.50.1 1.0 1.0 2.40.2 2.00.2 3.50.1 s Features q q 1.5 1.00.1 Low collector to emitter saturation voltage VCE(sat). M type p...1A*2 IC = 500mA, IB = 50mA*2 IC = 500mA, IB = 50mA*2 VCB = 10V, IE = -50mA, f = 200MHz VCB = 10V, IE...
Description Silicon NPN epitaxial planer type small signal transistor
Silicon NPN epitaxial planer type(For low-frequency power amplification) 1000 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR

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    2SD974

HITACHI[Hitachi Semiconductor]
Part No. 2SD974
OCR Text ...2MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SD974 Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to em...1A 1.5 A Pulse Pulse 0.2 0.1 0.05 25 75 0.2 0.1 IC = 0.5 A Ta = -25C 0.05 0.002...
Description Silicon NPN Epitaxial

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    71061 SI4831DY

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VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
Part No. 71061 SI4831DY
OCR Text ...0 @ VGS = -4.5 V ID (A) "5 "3.5 SCHOTTKY PRODUCT SUMMARY VKA (V) 30 Vf (V) Diode Forward Voltage 0.53 V @ 3 A IF (A) 3 S...1A 10 V, VDS = -15 V VGS = -5 V ID = -5 A 15 V, 5 V, 5 10 4.5 3.6 13 15 37 14 35 25 30 70 30 70 ns 2...
Description P-Channel 30-V (D-S) MOSFET with Schottky Diode

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